Potassium-based vanadium-based low-temperature sintered microwave dielectric ceramic material and preparation method thereof

A microwave dielectric ceramic and low-temperature sintering technology is applied in the field of potassium-based vanadium-based low-temperature sintered microwave dielectric ceramic materials and their preparation, which can solve the problems of lack of high-dielectric microwave dielectric ceramic powder, etc. simple craftsmanship

Inactive Publication Date: 2011-11-23
XIAN TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Microwave dielectric ceramic powder with excellent dielectric properties is the most important raw material in the preparation of chip passive integrated devices and modules using LTCC technology, and the current problems faced by the LTCC industry are mainly raw materials, especially the lack of suitable LTCC technology. High-dielectric microwave dielectric porcelain powder with excellent microwave dielectric properties

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A method for preparing a potassium-based vanadium-based low-temperature sintered microwave dielectric ceramic material comprises the following steps in sequence:

[0024] 1) The chemical raw material MoO will be analyzed for purity 3 , V 2 o 5 、 Bi 2 o 3 and K 2 CO 3 According to the formula (K 0.025 Bi 0.975 )(Mo 0.05 V 0.95 )O 4 ingredients.

[0025] 2) Mix the prepared chemical raw materials, put them into a nylon tank, add zirconium balls and alcohol balls for 4.5 hours, mix and grind them thoroughly, take out the raw materials and grind them at 200 o Quickly dry at C, pass through a 150-mesh sieve and press into blocks;

[0026] 3) Pressed block after 650 o C pre-fired for 6 hours to obtain the sample burnt block;

[0027] 4) Pulverize the sample burning block, and after 5 hours of secondary ball milling, fully mix and grind, 200 o C drying and granulation, after granulation, double-layer sieving through 80 mesh and 120 mesh sieves to obtain the seco...

Embodiment 2

[0032] A potassium-based vanadium-based low-temperature sintered microwave dielectric ceramic material is prepared by the following preparation method:

[0033] The difference from Example 1 is: 1) the chemical raw material MoO will be analyzed for purity3 , V 2 o 5 、 Bi 2 o 3 and K 2 CO 3 According to the formula (K 0.04 Bi 0.96 )(Mo 0.08 V 0.92 )O 4 ingredients. Other steps are the same as in Example 1.

[0034] The performance of this group of ceramic materials reaches the following indicators:

[0035] 700 o C~780 o C is sintered into porcelain in air, and the dielectric properties ε under microwave r =80 (3.75 GHz), quality factor Q=2,590, Qf=9,700 GHz, temperature coefficient of resonant frequency under microwave TCF=+30ppm / o C (25 o C~85 o C).

Embodiment 3

[0037] A potassium-based vanadium-based low-temperature sintered microwave dielectric ceramic material is prepared by the following preparation method:

[0038] The difference from Example 1 is: 1) the chemical raw material MoO will be analyzed for purity 3 , V 2 o 5 、 Bi 2 o 3 and K 2 CO 3 According to the formula (K 0.2 Bi 0.8 )(Mo 0.4 V 0.6 )O 4 ingredients. Other steps are the same as in Example 1.

[0039] The performance of this group of ceramic materials reaches the following indicators:

[0040] 650 o C~700 o C is sintered into porcelain in air, and the dielectric properties ε under microwave r =50 (5.3 GHz), quality factor Q=1,000, Qf=5,300 GHz, temperature coefficient of resonant frequency under microwave TCF=+61ppm / o C (25 o C~85 o C).

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Abstract

The invention discloses potassium-based vanadium-based low-temperature sintered microwave dielectric ceramic materials and a preparation method thereof. Based on the structure of typical scheelite of ABO4, low-valent K+ ions and Bi3+ are selected to occupy an A site jointly, and high-valent Mo6+ and V5+ composite cations are selected to occupy a B site; a series of ceramic materials are obtained by a solid state reaction sintering method, wherein the ceramic materials can be sintered in a temperature range below 800 DEG C, have a high dielectric constant (34<=epsilon r<=80), an adjustable temperature coefficient of resonant frequency (-260 ppm / DEG C<=TCF<=+116 ppm / DEG C), and a low microwave dielectric loss (high quality factor Qf value, 4,000 GHz<=Qf<=9,700 GHz) in microwave frequency band. The specific structure expression is (K0.5xBi1-0.5x)(MoxV1-x)O4, wherein 0.05<=x<=0.99.

Description

technical field [0001] The invention belongs to the technical field of electronic ceramics and its preparation, in particular to a potassium-based vanadium-based low-temperature sintered microwave dielectric ceramic material and a preparation method thereof. Background technique [0002] Low temperature co-fired ceramic (Low Temperature Co-fired Ceramic LTCC) technology is a remarkable integrated component technology developed in recent years, which has become the mainstream technology of passive integration, the development direction of the passive component field and the new component industry. point of economic growth. The use of LTCC to prepare chip-type passive integrated devices and modules has many advantages. First, ceramic materials have excellent high-frequency and high-Q characteristics; second, using metal materials with high electrical conductivity as conductor materials is conducive to improving the quality factor of circuit systems. ; Third, it can adapt ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/495C04B35/622
Inventor 庞利霞孙国斌李党娟周迪郭靖
Owner XIAN TECH UNIV
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