Bismuth-based molybdenum-based microwave dielectric ceramic material sintered at ultra low temperature and manufacture of the same

A technology of microwave dielectric ceramics and ceramic materials, applied in ceramics, inorganic insulators and other directions, to achieve the effects of simple chemical composition and preparation process, low dielectric loss and good microwave performance

Inactive Publication Date: 2008-12-10
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Microwave dielectric resonators made of high dielectric constant microwave materials can greatly reduce the size of microwave circuits, but the way out for further miniaturization lies in the development of MCM

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Raw material MoO will be analyzed for purity 3 and Bi 2 o 3 According to the formula (1-x)Bi 2 o 3 -x(Mo 1-z Nb z )O 3 Formulation, where x=0.125, z=0. After preparation, fully mix and ball mill for 4 hours, then dry, sieve, briquette, and pre-fire at 750°C for 4 hours, then pulverize the pre-fired block samples and then perform secondary ball milling for 5 hours, grind and bake After drying, granulate and sieve through double-layer sieves of 60 mesh and 120 mesh to obtain the required ceramic material. The ceramic material is pressed into shape (sheet or column) as required, and then sintered in air at 800°C to 900°C for 2 to 3 hours to form porcelain, and the low-temperature sintered bismuth-based molybdenum-based microwave dielectric ceramic material can be obtained.

[0028] The performance of this group of ceramic materials reaches the following indicators:

[0029] Sintered into porcelain at 800℃~900℃ in the air, dielectric properties ε under microwave r...

Embodiment 2

[0031] Raw material MoO will be analyzed for purity 3 and Bi 2 o 3 According to the formula (1-x)Bi 2 o 3 -x(Mo 1-z Nb z )O 3 Formulation, where x=0.25, z=0. After preparation, fully mix and ball mill for 4 hours, then dry, sieve, briquette, and pre-fire at 600°C for 4 hours, then pulverize the pre-fired block samples and then perform secondary ball milling for 5 hours, grind and bake After drying, granulate and sieve through double-layer sieves of 60 mesh and 120 mesh to obtain the required porcelain material. The ceramic material is pressed into shape (sheet or column) as required, and then sintered at 600°C to 640°C for 2 to 3 hours in the air to form porcelain, and the ultra-low temperature sintered bismuth-based molybdenum-based microwave dielectric ceramic material can be obtained.

[0032] The performance of this group of ceramic materials reaches the following indicators:

[0033] Sintered into porcelain in air at 600℃~640℃, the dielectric properties ε under m...

Embodiment 3

[0035] Raw material MoO will be analyzed for purity 3 and Bi 2 o 3 According to the formula (1-x)Bi 2 o 3 -x(Mo 1-z Nb z )O 3 Formulation, where x=0.5, z=0. After preparation, fully mix and ball mill for 4 hours, then dry, sieve, briquette, and pre-fire at 700°C for 4 hours, then pulverize the pre-fired block samples and then perform secondary ball milling for 5 hours, grind and bake After drying, granulate and sieve through double-layer sieves of 60 mesh and 120 mesh to obtain the required ceramic material. The ceramic material is pressed into shape (sheet or column) as required, and then sintered in air at 730°C-780°C for 2-3 hours to form porcelain, and the ultra-low temperature sintered bismuth-based molybdenum-based microwave dielectric ceramic material can be obtained.

[0036] The performance of this group of ceramic materials reaches the following indicators:

[0037] Sintered into porcelain at 730℃~780℃ in the air, dielectric properties ε under microwave r ~...

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PUM

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Abstract

The invention discloses a bismuthino molybdenum ultralow temperature sintering microwave medium ceramic material. A phase map of Bi2O3-MoO3 binary system is taken as a beginning, a single-phase compound is taken as a basis, and a series of microwave medium material which has good microwave dielectric property (the permittivity is between 10 and 45, and the Qf is between 4,000 and 25,000GHz) and can be sintered into ceramics at a low temperature of between 550 and 900 DEG C is prepared through the methods of adjusting the proportion of the binary system and substitution for equivalent and unequivalent ions. The structural formula is (1-x)[(Bi1-yAy)2O3]-x[(Mo1-zBz)O3], wherein, A is equal to La<3+>, Nd<3+>, and Sm<3+>, B is equal to W<6+>, Nb<5+>, Ta<5+>, Sb<5+>, Ti<4+>, Zr<4+>, and Sn<4+>, x is more than or equal to 0.01 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 0.20, and z is more than or equal to 0 and less than or equal to 0.20.

Description

technical field [0001] The invention belongs to the field of electronic ceramics and its preparation, in particular to a bismuth-based molybdenum-based ultra-low temperature sintered microwave dielectric ceramic material sintered at low temperature and its preparation. Background technique [0002] With the development of wireless communication, portability requirements are put forward for communication equipment systems, from microwave components to complete machine systems towards integration, in order to obtain products with small size, light weight, high reliability and low cost. [0003] The requirement for miniaturization and integration of microwave components (bandpass, resonator, filter, etc.) has led to the rapid development of low-temperature co-fired ceramic (LTCC) technology. Low-temperature co-fired ceramic technology can provide high-density, high-frequency, high-digital packaging technology and good heat treatment process. The co-firing temperature of low-te...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/495C04B35/50C04B35/622H01B3/12
Inventor 汪宏周迪姚熹庞利霞
Owner XI AN JIAOTONG UNIV
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