This application belongs to the field of power device technology and provides a trench-type MPS device and its fabrication method. A trench is formed on the front side of an N-type epitaxial layer. Then, a first P-type
dopant ion is implanted at the bottom of the trench, followed by high-temperature annealing to form a first P-type doped region. A second P-type
dopant ion is implanted below the sidewall of the trench, and a third P-type
dopant ion is implanted above the sidewall of the trench. Then, low-temperature annealing is performed to form a second P-type doped region below the sidewall of the trench and a third P-type doped region above the sidewall of the trench. The
doping concentration of the first, second, and third P-type doped regions gradually increases, resulting in weaker
electric field shielding of the Schottky device at the bottom of the trench and higher
anode implantation efficiency above the sidewall of the trench. This satisfies the conditions of high
electric field shielding for the Schottky device and minimal
impact on IRM, achieving the characteristics of high
breakdown voltage, low VF, high softness, and low IRM for the
fast recovery diode device.