Process deviation analysis method for silicon-based Mach-Zehnder type electro-optic modulator

An electro-optic modulator, silicon-based Mach technology, applied in the direction of instruments, optics, measuring electronics, etc., can solve the problems of few silicon-based Mach-Zehnder type electro-optic modulators, a lot of manpower, material resources and financial resources, and save manpower , the effect of good process tolerance

Active Publication Date: 2019-07-05
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the process deviation analysis is carried out from the structural level like passive devices, it usually requires a lot of manpower, material resources and financial resources, so people rarely conduct process deviation analysis on silicon-based Mach-Zehnder type electro-optic modulators

Method used

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  • Process deviation analysis method for silicon-based Mach-Zehnder type electro-optic modulator
  • Process deviation analysis method for silicon-based Mach-Zehnder type electro-optic modulator
  • Process deviation analysis method for silicon-based Mach-Zehnder type electro-optic modulator

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Embodiment

[0049] In this embodiment, the silicon-based Mach-Zehnder electro-optic modulators to be tested are all located on the same silicon chip and have the same design, such as figure 1 shown. The tests on the modulator are all driven by a single arm, the modulation rate is 25Gb / s, and the working frequency of the test system is 0-40GHz.

[0050] Step 1, quantification of the reflection characteristics of the driving signal on the traveling wave electrode, the test flow chart is attached figure 2 shown.

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Abstract

The invention discloses a process deviation analysis method for a silicon-based Mach-Zehnder type electro-optic modulator. The method comprises the following steps of (1) characterizing and quantifying reflection deviation characteristics of a driving signal on a traveling wave electrode by means of the input reflection coefficient S11; (2) performing measurement and quantization on modulation signal characteristics of the silicon-based Mach-Zehnder type electro-optic modulator, wherein the modulation signal characteristics comprise transmission characteristics, vertical characteristics and horizontal characteristics; and (3) introducing a Pearson correlation coefficient and a partial correlation coefficient, and analyzing the relationship between the reflection deviation characteristics of the driving signal and the deviation of the modulation signal characteristics by analyzing the values and trends of the Pearson correlation coefficient and partial correlation coefficient. The method provided by the invention can establish a link between process control and performance analysis at the device level and helps to develop device designs with better process tolerances.

Description

technical field [0001] The invention relates to an analysis method applied to a silicon-based Mach-Zehnder type electro-optic modulator, so as to realize the process deviation analysis at the device level. Background technique [0002] Compatible with existing CMOS technologies, silicon-based photonics has shown great potential for next-generation high-speed data transmission. Silicon-based modulators are a key component in silicon-based photonics, which are widely used in short-range optical interconnects in data centers and supercomputers. At present, many characteristics such as bandwidth and modulation efficiency of silicon-based Mach-Zehnder electro-optic modulators have reached a relatively good level. [0003] Process variation is an important issue for practical applications in silicon-based photonics, but its research is mainly limited to passive devices such as ring resonators and directional couplers. For the process deviation in passive devices, people usually ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01G02F1/03G02F1/225
CPCG02F1/0121G02F1/0123G02F1/0327G02F1/225G02F1/212G02F1/2257G01R31/2637G02F2202/105H04B10/07953
Inventor 江伟赵沛炎曾昭邦
Owner NANJING UNIV
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