Metal-silicon compound cantilever beam type microelectronic mechanical system probe card and manufacture method thereof

A technology of micro-electronic machinery and composite cantilever beams, which is applied to the components of TV systems, generators/motors, metal material coating processes, etc., can solve the problems of high cost, complicated preparation process, and difficulty in obtaining three-dimensional suspended electroplating metal probes structure and other issues, to achieve the effect of low cost, simplified processing technology and improved electrical performance

Inactive Publication Date: 2009-01-28
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This structure is relatively successful, but the preparation process of the whole structure is complicated and the cost is high
In addition, some researchers try to use electroplated metal as probe structure material, but the current MEMS processing technology is still difficult to obtain three-dimensional suspended electroplated metal probe structure

Method used

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  • Metal-silicon compound cantilever beam type microelectronic mechanical system probe card and manufacture method thereof
  • Metal-silicon compound cantilever beam type microelectronic mechanical system probe card and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The structural parameters of the composite cantilever beam probe card are selected as follows: beam length 700μm, silicon layer width 80μm, thickness 20μm, copper layer width 60μm, thickness 10μm, nickel pillar diameter 20μm, height 20μm.

[0027] (1) Double-sided etching silicon wafers: use (100) single crystal silicon wafers with a thickness of 450μm, clean with sulfuric acid and then deionized water, and bake in an oven at 180°C for 3 hours; use thermal oxidation to prepare dioxide with a thickness of about 2μm The silicon layer; the oxide layer is used as the mask layer for the subsequent wet-etching silicon process; firstly, 3μm positron glue AZ4620 is cast on the first side, and dried in a vacuum oven at 90°C for 1 hour, and then 3μm positron glue AZ4620 is also cast on the backside, 90°C vacuum Bake in an oven for 1 hour; Expose a 700μm long and 80μm wide cantilever pattern on the front for 50 seconds, develop for 1 minute, then engrave the back window pattern, expos...

Embodiment 2

[0034] The structural parameters of the composite cantilever beam probe card are selected as follows: beam length 2000μm, silicon layer width 100μm, thickness 50μm, copper layer width 80μm, thickness 20μm, nickel pillar diameter 8μm, height 15μm.

[0035] (1) Double-sided etching of silicon wafers: using (100) single crystal silicon wafers with a thickness of 450μm, cleaning with sulfuric acid and then deionized water, baking in an oven at 180°C for 3 hours; thermal oxidation is used to generate thicknesses of about 2μm on both sides Silicon dioxide; the oxide layer is used as the mask layer for the subsequent wet-etching silicon process; firstly, 3μm positron glue AZ4620 is cast on the first side, and dried in a vacuum oven at 90°C for 1 hour, and then 3μm positron glue AZ4620 is also cast on the backside, 90°C Bake in a vacuum oven for 1 hour; Expose a cantilever pattern with a front length of 2000 μm and a width of 100 μm for 50 seconds, develop for 30 seconds, then engrave the...

Embodiment 3

[0042] The structural parameters of the composite cantilever beam probe card are selected as follows: beam length 100μm, silicon layer width 10μm, thickness 5μm, copper layer width 8μm, thickness 2μm, nickel pillar diameter 5μm, height 10μm.

[0043] (1) Double-sided etching of silicon wafers: using (100) single crystal silicon wafers with a thickness of 450μm, cleaning with sulfuric acid and then deionized water, baking in an oven at 180°C for 3 hours; thermal oxidation is used to generate thicknesses of about 2μm on both sides Silicon dioxide; the oxide layer is used as the mask layer for the subsequent wet-etching silicon process; firstly, 3μm positron glue AZ4620 is cast on the first side, and dried in a vacuum oven at 90°C for 1 hour, and then 3μm positron glue AZ4620 is also cast on the backside, 90°C Bake in a vacuum oven for 1 hour; expose a 100μm long and 10μm wide cantilever pattern for 50 seconds on the front side, develop for 30 seconds, then engrave the back window pa...

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Abstract

The invention relates to a metal-silicon composite cantilever beam typed micron-electronic mechanical system probing card and a preparation method thereof; an ultraviolet thick film photolithography and bulk silicon micro-processing composite process is adopted to prepare a metal-silicon composite cantilever beam probing card structure, thus replacing an existing probing card structure consisting of single silicon or metal. The ultraviolet thick film photolithography process is used for preparing the metal probe with high depth / width ratio and metal circuit transmission wires below the probes, and the bulk silicon micro-processing composite process is used to prepare the silicon cantilever beam structure. The force during the testing process is commonly borne by the silicon cantilever beam and the metal circuit above the silicon cantilever beam; the electric and mechanical property of the probing card structure is controlled by adjusting the geometrical parameters of the metal circuit leads and the silicon cantilever beam; the probes above the probing card can be arranged by the positions of the pins of the chip to be tested; the probe tips are corresponding to the position of the pins of the chip one by one. The end of the metal circuit transmission wire leads the circuit to be connected on the back surface by a through hole electro-plating or wire punching type on a silicon substrate and leads the circuits to be connected onto printing circuit boards and test machine platforms further.

Description

Technical field [0001] The invention relates to a metal-silicon composite cantilever beam type microelectronic mechanical system probe card and a preparation method thereof. The prepared probe card is used for wafer-level chip testing and belongs to the field of integrated circuit testing. Background technique [0002] Wafer-level chip testing is to check the ideal working state of the wafer and the integrated circuit on the wafer by performing DC parameter test, AC parameter test and functional test on the integrated circuit on the wafer in the uncut state, and verify whether the parameter characteristics are as expected Compliance with the stability and reliability of the circuit, and then find ways to improve the yield, reduce the cost of chip manufacturing, and improve the function of the chip. With the development of VLSI technology towards greater integration and higher speed, the number of input / output pins on the chip has increased sharply, while the size and spacing have...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R1/06B81B7/02B81C1/00
Inventor 陈迪靖向萌汪鹏周然陈翔刘景全朱军
Owner SHANGHAI JIAO TONG UNIV
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