Manufacturing method of SOI base three-dimensional wedgy coupler integrated substrate structure

Abstract

The invention provides a manufacturing method of an SOI base three-dimensional wedgy coupler integrated substrate structure, which is characterized in that the method is realized by silicon micromachining technology. The related initial processing material is SOI material; the selective corrosion characteristic of different crystal surfaces of silicon material is utilized, and micro-electronic relative technology, such as anisotropic etch, bonding, photoetching, dry etching and the like is adopted to obtain SOI base three-dimensional wedgy coupler integrated substrate structure which respectively performs linear change in horizontal and vertical directions; a micro-nano size device zone connected with the output waveguide of the coupler has favorable surface quality, so that the inventioncan effectively improve the coupling efficiency of photonics device, such as general optical fiber, small-size plane waveguide and the like and provides favorable Wiener size photonics devices to prepare integrated substrate structure. The invention is the guarantee for preparing high-quality and high-sensitivity small-size photonics devices and has strong practicality.

Description

technical field [0001] The invention relates to a preparation method of an SOI (Silicon on Insulator, silicon on insulator)-based three-dimensional wedge coupler integrated substrate structure based on silicon micromachining technology, and belongs to the field of optoelectronic technology. Background technique [0002] Since the 1960s, optoelectronic integration has made great progress. The mainstream trend of integrated circuit development is the miniaturization of integrated systems. Among the many waveguide materials used in the communication band, the unique sandwich structure of SOI materials has unique advantages in the preparation of optoelectronic devices. The refractive indices of silicon and silicon dioxide materials are 3.45 and 1.4, respectively, and the high-contrast refractive index is greatly improved. The transmission efficiency of optical signals in SOI-based optoelectronic devices is improved, while SiO 2 The refractive index of the material is very clos...

AI Technical Summary

Problems solved by technology

[0005] Due to the thickness difference between the output waveguide and the input waveguide of the three-dimensional coupler, in the currently applied preparation method, the output waveguide and the three-dimensional coupler area are all realized by dry etching process, and the surface quality is poor, and the scattering caused by the rough surface The loss cannot be ignored, which seriously affects the coupling efficiency of the coupling device

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