Dimesize dynamic piezoresistance, pressure sensor, and manufacturing method

Abstract

The invention is a method for manufacturing a micro dynamic pressure resistance pressure sensor, using MEMS silicon micromachining method to manufacture a micro pressure sensitive chip of an E-type silicon cup force sensitive structure; the back of the chip is welded with Pyrex or GG-17 glass ring plate to form a pressure sensitive component; the naked surface of the glass ring is pasted at the upper end of the a ceramic pipe provided with spline groove on the circumferential surface, which are provided with silver baking electrode; the lead of the pressure sensitive component is an inner lead welded on an inner pressure soldered dot on the right side of the chip, and the other end of the inner lead is welded to the upper end of the silver baking electrode, the outer lead is welded to the lower end of the silver baking electrode; the pressure sensitive component is put in the outer pipe of the sensor and seal-boned with the outer pipe; the top of the sensor is welded with a top cover, and a small hole is made in the center of the top cover corresponding the chip; a micro cable drawing out the outer lead is fixed by injection component with a micro air pipe connected with back pressure cavity of the chip and then they are bonded to the bottom end of the outer pipe of the sensor; and the manufactured sensor has very strong light resistance and electromagnetic interference resistance and prevents destructive impacts.

Description

technical field

[0001] The invention relates to a miniature dynamic piezoresistive pressure sensor and a manufacturing method thereof, in particular to a microdynamic piezoresistive pressure sensor based on MEMS (Micro Electro Mechanical System) silicon micromachining technology and a manufacturing method thereof, especially suitable for air Dynamic pressure measurement in dynamic tests (commonly known as wind tunnel tests). Background technique

[0002] The silicon micromachining technology of MEMS (Micro Electro Mechanical System) technology was used in the manufacture of piezoresistive pressure sensors in the late 1970s. Using the piezoresistive effect of silicon, a certain crystal orientation on the silicon wafer was used by the planar integrated circuit process. , the strain detection piezoresistors made by oxidation diffusion or ion implantation doping, photolithography and other methods at a certain position, and interconnected to form a test Wheatstone strain bridge....

Examples

Embodiment Construction

[0054] Using MEMS silicon micromachining technology to manufacture miniature pressure sensitive chips, the unit size of the chip is 1.5×1.5, the size of the sensitive diaphragm is 1.0×1.0, and an island-shaped hard core is left in the center of the diaphragm, and the size of the hard core is 0.7 ×0.7, the force-sensitive detection resistor is distributed on the film between the hard core and the boundary hard frame, and the position is determined according to the design method of the E-type sensitive chip. The implementation steps are as follows Figure 1 to Figure 5 The implementation shown:

[0055] figure 1 The double-sided polished silicon wafer used as an elastic element is covered with 1 μm thick SiO on both sides by traditional thermal oxidation technology in MEMS technology processing. 2 Layer 2, and then use standard LPCVD method to cover 3000A thick Si on both sides 3 N 4 Layer 1, use two photolithography techniques to etch away the Si on the back of the silicon ...

technical field

[0001] The invention relates to a miniature dynamic piezoresistive pressure sensor and a manufacturing method thereof, in particular to a microdynamic piezoresistive pressure sensor based on MEMS (Micro Electro Mechanical System) silicon micromachining technology and a manufacturing method thereof, especially suitable for air Dynamic pressure measurement in dynamic tests (commonly known as wind tunnel tests). Background technique

[0002] The silicon micromachining technology of MEMS (Micro Electro Mechanical System) technology was used in the manufacture of piezoresistive pressure sensors in the late 1970s. Using the piezoresistive effect of silicon, a certain crystal orientation on the silicon wafer was used by the planar integrated circuit process. , the strain detection piezoresistors made by oxidation diffusion or ion implantation doping, photolithography and other methods at a certain position, and interconnected to form a test Wheatstone strain bridge....

Examples

Embodiment Construction

[0054] Using MEMS silicon micromachining technology to manufacture miniature pressure sensitive chips, the unit size of the chip is 1.5×1.5, the size of the sensitive diaphragm is 1.0×1.0, and an island-shaped hard core is left in the center of the diaphragm, and the size of the hard core is 0.7 ×0.7, the force-sensitive detection resistor is distributed on the film between the hard core and the boundary hard frame, and the position is determined according to the design method of the E-type sensitive chip. The implementation steps are as follows Figure 1 to Figure 5 The implementation shown:

[0055] figure 1 The double-sided polished silicon wafer used as an elastic element is covered with 1 μm thick SiO on both sides by traditional thermal oxidation technology in MEMS technology processing. 2 Layer 2, and then use standard LPCVD method to cover 3000A thick Si on both sides 3 N 4 Layer 1, use two photolithography techniques to etch away the Si on the back of the silicon ...

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