Dimesize dynamic piezoresistance, pressure sensor, and manufacturing method

Abstract

The invention is a method for manufacturing a micro dynamic pressure resistance pressure sensor, using MEMS silicon micromachining method to manufacture a micro pressure sensitive chip of an E-type silicon cup force sensitive structure; the back of the chip is welded with Pyrex or GG-17 glass ring plate to form a pressure sensitive component; the naked surface of the glass ring is pasted at the upper end of the a ceramic pipe provided with spline groove on the circumferential surface, which are provided with silver baking electrode; the lead of the pressure sensitive component is an inner lead welded on an inner pressure soldered dot on the right side of the chip, and the other end of the inner lead is welded to the upper end of the silver baking electrode, the outer lead is welded to the lower end of the silver baking electrode; the pressure sensitive component is put in the outer pipe of the sensor and seal-boned with the outer pipe; the top of the sensor is welded with a top cover, and a small hole is made in the center of the top cover corresponding the chip; a micro cable drawing out the outer lead is fixed by injection component with a micro air pipe connected with back pressure cavity of the chip and then they are bonded to the bottom end of the outer pipe of the sensor; and the manufactured sensor has very strong light resistance and electromagnetic interference resistance and prevents destructive impacts.

Description

technical field [0001] The invention relates to a miniature dynamic piezoresistive pressure sensor and a manufacturing method thereof, in particular to a microdynamic piezoresistive pressure sensor based on MEMS (Micro Electro Mechanical System) silicon micromachining technology and a manufacturing method thereof, especially suitable for air Dynamic pressure measurement in dynamic tests (commonly known as wind tunnel tests). Background technique [0002] The silicon micromachining technology of MEMS (Micro Electro Mechanical System) technology was used in the manufacture of piezoresistive pressure sensors in the late 1970s. Using the piezoresistive effect of silicon, a certain crystal orientation on the silicon wafer was used by the planar integrated circuit process. , the strain detection piezoresistors made by oxidation diffusion or ion implantation doping, photolithography and other methods at a certain position, and interconnected to form a test Wheatstone strain bridge....

AI Technical Summary

Problems solved by technology

The chip of Kulite's microsensor has a small radial size, so the natural frequency is high, but due to the need to face the medium, the influence of medium dust and the influence of light effects, Kulite has to package products on the front of the silicon chip. A thin cap with an array of holes punched by a laser is placed in front of the front, and it is not only for ventilation but also to prevent dust particles from hitting the center of the thinnest and easily punctured film at high speed. These array holes are usually called M-type or The S type is distributed in the outer edge area of ​​the film edge, this kind of protection will seriously affect the dynamic frequency response of the use

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