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Piezoresistance type high-frequency dynamic high voltage sensing device

A high-voltage sensor, high-frequency dynamic technology, applied in the measurement of the property and force of piezoelectric resistance materials, etc., can solve the problems of flat packaging and other problems, and achieve the effect of avoiding small signal noise and large noise

Active Publication Date: 2008-02-27
KUNSHAN SHUANGQIAO SENSOR MEASUREMENT CONTROLLING
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Kulite and Endevco have adopted bulk micromachined C-shaped flat-film force-sensing structures; but neither of them has solved the problem of fully flat packaging

Method used

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  • Piezoresistance type high-frequency dynamic high voltage sensing device
  • Piezoresistance type high-frequency dynamic high voltage sensing device
  • Piezoresistance type high-frequency dynamic high voltage sensing device

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Experimental program
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Embodiment Construction

[0028] The high-frequency dynamic high-voltage sensor adopts the MEMS silicon micromachining process to make the round flat membrane fixed and supported by the flush package, which eliminates the influence of the lumen effect on the dynamic test and realizes the real-time measurement of the dynamic pressure. It adopts a high-frequency broadband amplifier , while ensuring a high enough frequency response, it also avoids the weakness of small signal and large noise. The implementation steps are realized as shown in Figure 1 to Figure 5:

[0029] Figure 1 is a circular flat silicon diaphragm with a circular force-sensitive area. The double-sided polished silicon wafer used as an elastic element is firstly covered with 1 μm thick SiO on both sides by traditional thermal oxidation technology in MEMS technology processing. 2 Layer 2, and then use standard LPCVD method to cover 3000A thick Si on both sides 3 N 4 Layer 1: use two photolithography techniques to etch away the Si on th...

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Abstract

The sensor comprises a piezoresistive sensitive unit with a silicon piezoresistive sensitive element with a circular level silicon member piece covered SiO2 and Si3N4 on surfaces and a piezoresistive area that has Wheatstone bridge and electrode welt to the inner gold wire on front face with bare silicon piece welt to the ring piece; and a glass ring piece with another surface stuck to the circular concave surface on base; a base with tail end rotary fixed a sensor pipe cap, a transfer circuit in cavity connected to one end of the inner wire, and drawing-off cable drawn from the cap bottom and fixed on the cap, and a HF amplifying circuit between transfer circuit and cable.

Description

technical field [0001] The invention relates to a piezoresistive high-frequency dynamic high-voltage sensor, in particular to a high-frequency dynamic piezoresistive pressure sensor based on MEMS (Micro Electro Mechanical System) silicon micromachining technology, especially suitable for chemical detonation experiments, engineering Dynamic pressure measurement of physical test, aerodynamic test (commonly known as wind tunnel test), hydraulic engineering, aerospace, weapon test, ship, etc. technical background [0002] The silicon micromachining technology of MEMS (Micro Electro Mechanical System) technology was used in the production of piezoresistive pressure sensors in the late 1970s. Using the piezoresistive effect of silicon, the crystal was fixed on the silicon wafer with the planar integrated circuit technology. Direction, the strain detection piezoresistors made by oxidation diffusion or ion implantation doping, photolithography and other methods at a certain position...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/18
Inventor 王文襄许广军李水侠李济顺谢维钦温争艳
Owner KUNSHAN SHUANGQIAO SENSOR MEASUREMENT CONTROLLING
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