Pressure resistance type high frequency dynamic low voltage sensor

Abstract

The invention relates to a compressive resistance high frequency dynamic low pressure sensor that is made up of compressive resistance sensitive component, sensor base, repeater circuit and leading out cable. The compressive resistance sensitive component includes silicon compressive resistance sensitive component and glass circle sheet. The compressive resistance sensitive component has force sensitive area C or E type flat silicon sheet that is covered Si3N4 and SiO2 layer on positive surface. The force sensitive positive area has electrode and the negative area has Si3N4 and SiO2 layer and jointing on glass circle sheet. The leading out cable is jointed to repeater circuit. High frequency bandwidth amplifying circuit is set between the repeater circuit and the leading out cable to realize high frequency amplifying.

Description

technical field

[0001] The invention relates to a piezoresistive high-frequency dynamic low-voltage sensor, in particular to a high-frequency dynamic piezoresistive low-voltage sensor based on MEMS (Micro Electro Mechanical System) silicon micromachining technology, which is especially suitable for aerodynamic tests (commonly known as Wind tunnel test), water conservancy engineering, aerospace, weapon test, dynamic pressure measurement of ships, etc. technical background

[0002] The silicon micromachining technology of MEMS (Micro Electro Mechanical System) technology was used in the production of piezoresistive pressure sensors in the late 1970s. Using the piezoresistive effect of silicon, the crystal was fixed on the silicon wafer with the planar integrated circuit technology. Direction, the strain detection piezoresistors made by oxidation diffusion or ion implantation doping, photolithography and other methods at a certain position, and interconnected to form a test Whe...

Examples

Embodiment Construction

[0042] The high-frequency dynamic low-pressure sensor adopts the MEMS silicon micromachining process to make the peripheral fixed square planar film and uses the quasi-flush package to eliminate the influence of the lumen effect on the dynamic test and realize the real-time measurement of the dynamic pressure. It adopts high-frequency broadband The amplifier ensures a sufficiently high frequency response while avoiding its weakness of small signal and large noise. The implementation steps are as follows Figure 1 to Figure 6 The implementation shown:

[0043] figure 1 It is a C-shaped square planar silicon diaphragm with a square force-sensitive area. The double-sided polished silicon wafer used as an elastic element is first covered with 1 μm thick SiO on both sides by traditional thermal oxidation technology during MEMS technology processing. 2 Layer 2, and then use standard LPCVD method to cover 3000A thick Si on both sides 3 N 4Layer 1, use two photolithography techniq...

technical field

[0001] The invention relates to a piezoresistive high-frequency dynamic low-voltage sensor, in particular to a high-frequency dynamic piezoresistive low-voltage sensor based on MEMS (Micro Electro Mechanical System) silicon micromachining technology, which is especially suitable for aerodynamic tests (commonly known as Wind tunnel test), water conservancy engineering, aerospace, weapon test, dynamic pressure measurement of ships, etc. technical background

[0002] The silicon micromachining technology of MEMS (Micro Electro Mechanical System) technology was used in the production of piezoresistive pressure sensors in the late 1970s. Using the piezoresistive effect of silicon, the crystal was fixed on the silicon wafer with the planar integrated circuit technology. Direction, the strain detection piezoresistors made by oxidation diffusion or ion implantation doping, photolithography and other methods at a certain position, and interconnected to form a test Whe...

Examples

Embodiment Construction

[0042] The high-frequency dynamic low-pressure sensor adopts the MEMS silicon micromachining process to make the peripheral fixed square planar film and uses the quasi-flush package to eliminate the influence of the lumen effect on the dynamic test and realize the real-time measurement of the dynamic pressure. It adopts high-frequency broadband The amplifier ensures a sufficiently high frequency response while avoiding its weakness of small signal and large noise. The implementation steps are as follows Figure 1 to Figure 6 The implementation shown:

[0043] figure 1 It is a C-shaped square planar silicon diaphragm with a square force-sensitive area. The double-sided polished silicon wafer used as an elastic element is first covered with 1 μm thick SiO on both sides by traditional thermal oxidation technology during MEMS technology processing. 2 Layer 2, and then use standard LPCVD method to cover 3000A thick Si on both sides 3 N 4Layer 1, use two photolithography techniq...

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