Miniature dynamic piezoresistive pressure sensor and manufacturing method thereof

Abstract

A manufacturing method of a miniature dynamic piezoresistive pressure sensor is to manufacture a miniature pressure-sensitive chip with a MEMS silicon micromachining method, and the chip is an E-type silicon cup force-sensitive structure; the back of the chip is welded with a Pyrex or GG-17 glass ring to form a pressure sensor. Sensitive components; the exposed surface of the glass ring is bonded to the upper end of the porcelain tube with a spline groove on the outer peripheral surface, and the spline groove is provided with a baked silver electrode; the electrical lead of the pressure sensitive component is to weld the gold wire inner lead on the front of the chip by pressure welding spot welding , the other end of the inner lead is welded to the upper end of the baked silver electrode; the outer lead is welded to the lower end of the baked silver electrode; the pressure sensitive component is put into the sensor outer tube and sealed and bonded; the top of the sensor outer tube is welded to the top cover, and the center of the top cover of the corresponding chip is set There is a small hole; the micro-cable leading out of the lead wire and the micro-air duct connected to the back pressure chamber of the chip are fixed with injection molding components, and then bonded to the bottom of the outer tube of the sensor. The manufactured micro-sensor has strong anti-light and anti-electromagnetic Interfering, protection against damaging impacts.

Description

technical field [0001] The invention relates to a miniature dynamic piezoresistive pressure sensor and a manufacturing method thereof, in particular to a microdynamic piezoresistive pressure sensor based on MEMS (Micro Electro Mechanical System) silicon micromachining technology and a manufacturing method thereof, especially suitable for air Dynamic pressure measurement in dynamic tests (commonly known as wind tunnel tests). Background technique [0002] The silicon micromachining technology of MEMS (Micro Electro Mechanical System) technology was used in the manufacture of piezoresistive pressure sensors in the late 1970s. Using the piezoresistive effect of silicon, a certain crystal orientation on the silicon wafer was used by the planar integrated circuit process. , the strain detection piezoresistors made by oxidation diffusion or ion implantation doping, photolithography and other methods at a certain position, and interconnected to form a test Wheatstone strain bridge....

AI Technical Summary

Problems solved by technology

The chip of Kulite's microsensor has a small radial size, so the natural frequency is high, but due to the need to face the medium, the influence of medium dust and the influence of light effects, Kulite has to package products on the front of the silicon chip. A thin cap with an array of holes punched by a laser is placed in front of the front, and it is not only for ventilation but also to prevent dust particles from hitting the center of the thinnest and easily punctured film at high speed. These array holes are usually called M-type or The S type is distributed in the outer edge area of ​​the film edge, this kind of protection will seriously affect the dynamic frequency response of the use

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