Thin film transistor and manufacturing method thereof, array substrate and display device

Abstract

Embodiments of the invention provide a thin film transistor, a manufacturing method thereof, an array substrate, and a display device, and relates to the field of electronic devices. The thin film transistor is capable of reducing probability that metal atoms in a second metal layer in a source electrode and/or a drain electrode diffuse to a channel region. The thin film transistor comprises: an active layer disposed on the substrate; and a source electrode and a drain electrode in contact with the active layer; wherein the source electrode and the drain electrode comprise a first metal layerand a second metal layer arranged in a stacked manner, and the first metal layer is adjacent to the active layer relative to the second metal layer. Area of an overlapping area of orthographic projection of the second metal layer in the source electrode and the active layer on the substrate is smaller than area of an overlapping area of orthographic projection of the first metal layer and the active layer in the source electrode on the substrate; and/or area of an overlapping area of orthographic projection of the second metal layer and the active layer in the drain electrode on the substrateis smaller than area of an overlapping area of orthographic projection of the first metal layer in the drain electrode and the active layer on the substrate.

Description

technical field [0001] The invention relates to the field of electronic devices, in particular to a thin film transistor, a manufacturing method thereof, an array substrate, and a display device. Background technique [0002] A thin film transistor (Thin Film Transistor, TFT), as a commonly used electronic device, has a wide range of applications in the electronic field. Thin film transistors generally include a gate, an active layer, a source and a drain, etc. In some thin film transistors, the source and drain adopt a double-layer metal structure, however, the upper metal diffuses to the channel position in the active layer, Therefore, the characteristics of the thin film transistor are adversely affected, and the stability of the thin film transistor is reduced; for example, the on-state current of the thin film transistor is reduced. Contents of the invention [0003] Embodiments of the present invention provide a thin film transistor and its manufacturing method, an ...

AI Technical Summary

Problems solved by technology

Thin film transistors generally include a gate, an active layer, a source and a drain, etc. In some thin film transistors, the source and drain adopt a double-layer metal structure, however, the upper metal diffuses to the channel position in the active layer, As a result, the characteristics of the thin film transistor are adversely affected, and the stability of the thin film transistor is reduced; for example, the on-state current of the thin film transistor is reduced, etc.

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