Array substrate and display panel

A technology of array substrate and hydrogen barrier layer, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as poor performance of low-temperature polysilicon thin film transistors

Active Publication Date: 2020-10-30
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Embodiments of the present application provide an array substrate and a display panel to alleviate the technical problem of poor performance of low-temperature polysilicon thin film transistors in existing display panels

Method used

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  • Array substrate and display panel

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Embodiment Construction

[0039] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0040] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the a...

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Abstract

The invention provides an array substrate and a display panel. A driving circuit layer in the array substrate is formed on one side of a substrate, and the driving circuit layer comprises a low-temperature polycrystalline silicon thin film transistor and a low-temperature polycrystalline oxide thin film transistor which are electrically connected. The low-temperature polycrystalline silicon thin film transistor sequentially comprises a polycrystalline silicon active layer, a first grid electrode, a first source electrode and a first drain electrode in the direction away from the low-temperature polycrystalline silicon thin film transistor, and the low-temperature polycrystalline oxide thin film transistor sequentially comprises an oxide active layer, a second grid electrode, a second source electrode and a second drain electrode; a hydrogen barrier layer is formed on at least one side of the upper side or the lower side of the oxide active layer; a pixel electrode layer is formed on the side, away from the substrate, of the drive circuit layer, a pixel electrode is formed through patterning, and the pixel electrode is connected with the first source electrode or the first drain electrode. The hydrogen barrier layer can prevent hydrogen ions in other film layers from invading the oxide active layer to cause device characteristic drift, so that the performance of the transistorsis improved.

Description

technical field [0001] The present application relates to the field of display technology, and in particular to an array substrate and a display panel. Background technique [0002] In existing display panels, low-temperature polysilicon thin film transistors are widely used. However, due to the influence of manufacturing process and external environment, the stability of low-temperature polysilicon thin film transistors is weak, resulting in poor device performance and difficult to meet display requirements. [0003] Therefore, the existing display panel has the technical problem of poor performance of the low-temperature polysilicon thin film transistor, which needs to be improved. Contents of the invention [0004] Embodiments of the present application provide an array substrate and a display panel, which are used to alleviate the technical problem of poor performance of low-temperature polysilicon thin film transistors in existing display panels. [0005] The applica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L27/32
CPCH01L27/1222H01L27/1248H01L27/1255H10K59/12H01L27/1225H10K59/124H10K59/1213H10K59/131H10K59/1216
Inventor 赵慧慧彭浩
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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