Thermoelectric film material and production process

A thermoelectric thin film and manufacturing process technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc. Effect

Active Publication Date: 2017-03-29
SUZHOU KANRONICS ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the research direction of thermoelectric materials is mostly towards the direction of high power and high efficiency. However, for the fie

Method used

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  • Thermoelectric film material and production process

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Experimental program
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Effect test

Embodiment 1

[0048] (1) Synthesis of base materials for thermoelectric materials: (1a) Bismuth telluride (Bi 2 Te 3 ) and antimony telluride (Sb 2 Te 3 ) according to the weight ratio of 1:1 to uniformly mix to obtain the main material, and then add an appropriate amount of sodium dodecylbenzene sulfonate (SDBS) in the main material obtained, the main material and sodium dodecylbenzene sulfonate ( SDBS) with a weight ratio of 100:1.5, mixed evenly to obtain a mixture; (1b) Put the obtained mixture into a reaction kettle, and hot-press sintering at a pressure of 0.29-0.3MPa and a temperature of 200°C for 16h , to obtain a sintered body of thermoelectric material. In addition, continuous stirring is required during the hot-pressing sintering process, and the stirring speed is controlled at 100r / min; (1c) Due to the difference in specific gravity between the sintered body of thermoelectric material and impurities, first use a centrifuge to The obtained thermoelectric material sintered body...

Embodiment 2

[0054] (1) Synthesis of base materials for thermoelectric materials: (1a) Bismuth telluride (Bi 2 Te 3 ) and antimony telluride (Sb 2 Te 3 ) uniformly mixed according to the weight ratio of 0.9:1.1 to obtain the main ingredient, and then add an appropriate amount of polyvinylpyrrolidone (PVP) to the obtained main ingredient, the weight ratio of the main ingredient to polyvinylpyrrolidone (PVP) is 110:1.3, Mix evenly to obtain a mixture; (1b) Put the obtained mixture into a reaction kettle, and hot press and sinter under the conditions of a pressure of 0.29-0.3MPa and a temperature of 210°C for 14 hours to synthesize a thermoelectric material sintered body, and in addition During the hot pressing sintering process, continuous stirring is required, and the stirring speed is controlled at 100r / min; (1c) Due to the difference in specific gravity between the thermoelectric material sintered body and impurities, the obtained thermoelectric material sintered body is first centrifug...

Embodiment 3

[0060] (1) Synthesis of base materials for thermoelectric materials: (1a) Bismuth telluride (Bi 2 Te 3 ) and antimony telluride (Sb 2 Te 3 ) uniformly mixed according to the weight ratio of 1.1:0.9 to obtain the main ingredient, and then add an appropriate amount of polyvinylpyrrolidone (PVP) to the obtained main ingredient, the weight ratio of the main ingredient to polyvinylpyrrolidone (PVP) is 90:0.9, Mix evenly to obtain a mixture; (1b) Put the obtained mixture into a reaction kettle, and hot press and sinter under the conditions of a pressure of 0.29-0.3MPa and a temperature of 210°C for 14 hours to synthesize a thermoelectric material sintered body, and in addition During the hot pressing sintering process, continuous stirring is required, and the stirring speed is controlled at 100r / min; (1c) Due to the difference in specific gravity between the thermoelectric material sintered body and impurities, the obtained thermoelectric material sintered body is first centrifuga...

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Abstract

The present invention discloses a thermoelectric thin film material and a production process thereof. The production process of the thermoelectric thin film material comprises the steps of synthesizing a thermoelectric material base material, preparing a slurry, preparing a thermoelectric thin film base body, carrying out sintering treatment and the like. According to the thermoelectric thin film material and the production process thereof of the invention, a silk-screen printing technology is adopted to print the slurry on a flexible bearing base, and therefore, a process bottleneck that a thin film is deposited on a low-melting point flexible bearing base through using a high-melting point thermoelectric material can be broken through; a sectional type sintering treatment mode is adopted to sinter the dried thermoelectric thin film base body, since the sectional type sintering treatment mode has the characteristics of high heating speed, short sintering time and low sintering temperature, the low melting point requirement of the flexible bearing base can be satisfied; secondary crystallization can be realized better, and therefore, the compactness of bismuth telluride and antimony telluride after recrystalization can reach 88% to 90%; and therefore, the material obtained through synthesis is dense in surface, the specific heat capacity of the material is higher, and the material has a good heat end and cold end and can meet market demands.

Description

technical field [0001] The invention relates to the technical field of thermoelectric materials, in particular to a thermoelectric thin film material and a manufacturing process thereof. Background technique [0002] Thermoelectric material is a functional material that can convert heat energy and electric energy. It has the following advantages: ①Small size, light weight, strong, and no noise during operation; ②The temperature can be controlled within ±0.1℃; ③No need to use CFC will not cause any environmental pollution; ④The heat source can be recovered and converted into electric energy, with long service life and easy control. In short, thermoelectric materials are materials with broad application prospects. In today's increasingly serious environmental pollution and energy crisis, research on new thermoelectric materials has strong practical significance. [0003] At present, the research direction of thermoelectric materials is mostly towards the direction of high pow...

Claims

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Application Information

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IPC IPC(8): H01L35/34H01L35/16
CPCH10N10/852H10N10/01
Inventor 郭志军王雷
Owner SUZHOU KANRONICS ELECTRONICS TECH CO LTD
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