Preparation method of yttrium-doped antimony telluride phase changing material

A technology of phase change materials and yttrium doping, applied in the direction of electrical components, etc., can solve the problems of uneven distribution of elements in phase change materials, affecting device performance, and easy phase separation, etc., achieving low cost, uniform element distribution, and easy raw materials The effect

Active Publication Date: 2018-08-10
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The element distribution in the phase change material prepared by this method is uneven, the repeatability is poor, the phase separation is easy to occur, and the performance of the device is seriously affected. Therefore, it is urgent to find new doping elements and improve the existing preparation method.

Method used

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  • Preparation method of yttrium-doped antimony telluride phase changing material
  • Preparation method of yttrium-doped antimony telluride phase changing material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Preparation Y x Sb 2-x Te 3 , x=0.25, namely Y 0.25 Sb 1.75 Te 3

[0020] 1) Weigh 0.25mmol Y(NO 3 ) 3 ·6H 2 O, 1.75 mmol SbCl 3 and 3 mmol TeO 2 . Set Y(NO 3 ) 3 ·6H 2 O, SbCl 3 Dissolve in 5ml absolute ethanol to obtain solution A; TeO 2 Dissolve in 40ml dilute ammonia solution to obtain solution B;

[0021] 2) Mix solution A and solution B obtained in step 1), and stir magnetically at room temperature for 30 minutes to mix the raw materials evenly to obtain a precursor solution;

[0022] 3) Move the precursor solution obtained in step 2) into a polytetrafluoroethylene-lined reactor, add 1.2g NaBH 4 , close the reaction kettle, and stop the reaction after insulated at 180°C for 20h;

[0023] 4) After the reaction temperature drops to room temperature, open the reaction kettle, pour off the upper liquid, and leave the lower precipitate and a part of viscous solution;

[0024] 5) The precipitate obtained in step 4) was washed alternately with deionize...

Embodiment 2

[0026] Preparation Y x Sb 2-x Te 3 , x=0.083, namely Y 0.083 Sb 1.917 Te 3

[0027] 1) Weigh 0.083mmol Y(NO 3 ) 3 ·6H 2 O, 1.917mmol SbCl 3 and 3 mmol TeO 2 . Set Y(NO 3 ) 3 ·6H 2 O, SbCl 3 Dissolve in 5ml absolute ethanol to obtain solution A; TeO 2 Dissolve in 40ml dilute ammonia solution to obtain solution B;

[0028] 2) Mix solution A and solution B obtained in step 1), and stir magnetically at room temperature for 30 minutes to mix the raw materials evenly to obtain a precursor solution;

[0029] 3) Move the precursor solution obtained in step 2) into a polytetrafluoroethylene-lined reactor, add 1.2g NaBH 4 , close the reaction kettle, and stop the reaction after insulated at 180°C for 20h;

[0030] 4) After the reaction temperature drops to room temperature, open the reaction kettle, pour off the upper liquid, and leave the lower precipitate and a part of viscous solution;

[0031] 5) The precipitate obtained in step 4) was washed alternately with deio...

Embodiment 3

[0033] Preparation Y x Sb 2-x Te 3 , x=0.167, namely Y 0.167 Sb 1.833 Te 3

[0034] 1) Weigh 0.167mmol Y(NO 3 ) 3 ·6H 2 O, 1.833 mmol SbCl 3 and 3 mmol TeO 2 . Set Y(NO 3 ) 3 ·6H 2 O, SbCl 3 Dissolve in 5ml absolute ethanol to obtain solution A; TeO 2 Dissolve in 40ml dilute ammonia solution to obtain solution B;

[0035] 2) Mix solution A and solution B obtained in step 1), and stir magnetically at room temperature for 30 minutes to mix the raw materials evenly to obtain a precursor solution;

[0036] 3) Move the precursor solution obtained in step 2) into a polytetrafluoroethylene-lined reactor, add 1.2g NaBH 4 , close the reaction kettle, and stop the reaction after insulated at 180°C for 20h;

[0037] 4) After the reaction temperature drops to room temperature, open the reaction kettle, pour off the upper liquid, and leave the lower precipitate and a part of viscous solution;

[0038] 5) The precipitate obtained in step 4) was washed alternately with dei...

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Abstract

The invention provides a preparation method of an yttrium-doped antimony telluride phase changing material. The preparation method of the yttrium-doped antimony telluride phase changing material Y<x>Sb<2-x>Te<3> comprises the steps of 1) enabling raw materials Y(NO<3>)<3>.6H<2>O, SbCl<3> and TeO<2> to be dissolved into a mixed solvent of dilute ammonia water and absolute ethyl alcohol to obtain aprecursor, wherein the molar ratio of Y(NO<3>)<3>.6H<2>O to SbCl<3> to TeO<2> is x: 2-x: 3 (x is greater than or equal to 0 and less than or equal to 0.33); 2) transferring the precursor obtained in the step 1) into a reaction kettle, adding NaBH<4>, next, heating to 160-200 DEG C, performing thermal insulation for 18-24h, then cooling to the room temperature, and next, separating out precipitates; and 3) performing alternate washing and filtering on the precipitates by deionized water and ethyl alcohol and then carrying out vacuum constant temperature drying to obtain the yttrium-doped antimony telluride phase changing material. The preparation method disclosed in the invention has the characteristics of low cost of raw materials, simple process, low equipment cost, safety and no pollution and the like; and the prepared phase change material is small in granularity, high in purity and uniform in element distribution.

Description

technical field [0001] The invention belongs to the field of phase-change materials, and relates to a preparation method of yttrium-doped antimony telluride. Background technique [0002] Phase change memory is an information storage device that uses the conductivity difference between crystalline and amorphous chalcogenides to store data. Phase change memory has the advantages of non-volatility, long cycle life, small component size, multi-level storage, radiation resistance, high and low temperature resistance, vibration resistance, electronic interference resistance, and compatibility with existing integrated circuit technology. It is the most likely next-generation semiconductor memory. However, the slow crystallization rate and poor thermal stability of phase change materials limit their large-scale commercialization. [0003] Doping can increase the crystallization speed and thermal stability of phase change materials. Ti x Sb 2-x Te 3 Is the use of Ti simple sub...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/021H10N70/8828
Inventor 周健刘宾孙志梅
Owner BEIHANG UNIV
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