A method for preparing a tilted nanowire array structural antimony telluride based membrane by evaporation coating

An antimony telluride base film and tilted nanotechnology are applied in the field of preparing an antimony telluride base film with a tilted nanowire array structure by using evaporation coating, which can solve the problem of no tilted nanowire array structure and the like, achieve the improvement of the thermoelectric quality factor, and the method is simple , the effect of significant practical value and economic benefits

Inactive Publication Date: 2018-06-29
TIANJIN UNIV OF SCI & TECH
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to our understanding, the novel vertical nanowire array structure (Sb,Bi) 2 Te 3 The film has not been reported so far, and there is no tilted nanowire array structure (Sb, Bi) 2 Te 3 Membrane Patents and Documentation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing a tilted nanowire array structural antimony telluride based membrane by evaporation coating
  • A method for preparing a tilted nanowire array structural antimony telluride based membrane by evaporation coating
  • A method for preparing a tilted nanowire array structural antimony telluride based membrane by evaporation coating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Fabrication of vertical nanowire array structures (Sb,Bi) by evaporation coating on glass substrates 2 Te 3 membrane:

[0044] (1) the mass percent purity is 99.99% Sb 2 Te 3 , Te and Bi powders (mass ratio Sb 2 Te 3 :Te:Bi=10:0.8:0.8 evenly mixed) press Sb under 8MPa pressure 2 Te 3 , Te and Bi mixed materials into bulk; the Sb 2 Te 3 , The average particle size of Te and Bi powders is less than 50 μm;

[0045] (2) The substrate was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 5 minutes, then taken out, and dried with high-purity 99.999% nitrogen;

[0046] (3) Add 0.1g of Sb 2 Te 3 , Te and Bi mixed materials are pressed into the tungsten boat in the vacuum chamber of the vacuum coating machine, the substrate is placed in the center of the sample stage, and the angle θ=0° between the sample stage and the horizontal plane is adjusted; the center of the substrate and the tungsten The boat distance d=8cm;

[0047] (4) Fill the v...

Embodiment 2

[0055] Fabrication of Tilted Nanowire Array Structures by Evaporation Coating on Glass Substrates (Sb, Bi) 2 Te 3 membrane:

[0056] (1) the mass percent purity is 99.99% Sb 2 Te 3 , Te and Bi powders (mass ratio Sb 2 Te 3 :Te:Bi=10:1.0:1.0 evenly mixed) press Sb under 9MPa pressure 2 Te 3 , Te and Bi mixed materials into bulk; the Sb 2 Te 3 , The average particle size of Te and Bi powders is less than 50 μm;

[0057] (2) The substrate was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 7 minutes, then taken out, and dried with high-purity 99.999% nitrogen;

[0058] (3) 0.12g of Sb 2 Te 3 , Te and Bi mixed materials are pressed into the tungsten boat in the vacuum chamber of the vacuum coating machine, the substrate is placed in the center of the sample stage, and the angle between the sample stage and the horizontal plane is adjusted to θ=30°; the center of the substrate and the tungsten The boat distance d=9cm;

[0059] (4) Fill the v...

Embodiment 3

[0066] Embodiment 3 (preferred)

[0067]Fabrication of Tilted Nanowire Array Structures by Evaporation Coating on Glass Substrates (Sb, Bi) 2 Te 3 membrane:

[0068] (1) the mass percent purity is 99.99% Sb 2 Te 3 , Te and Bi powders (mass ratio Sb 2 Te 3 :Te:Bi=10:1.0:1.0 evenly mixed) press Sb under 9MPa pressure 2 Te 3 , Te and Bi mixed materials into bulk; the Sb 2 Te 3 , The average particle size of Te and Bi powders is less than 50 μm;

[0069] (2) The substrate was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 8 minutes, then taken out, and dried with high-purity 99.999% nitrogen;

[0070] (3) 0.12g of Sb 2 Te 3 , Te and Bi mixed materials are pressed into the tungsten boat in the vacuum chamber of the vacuum coating machine, the substrate is placed in the center of the sample stage, and the angle between the sample stage and the horizontal plane is adjusted to θ = 45°; the center of the substrate and the tungsten The boat dist...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for preparing a tilted nanowire array structural antimony telluride based membrane by evaporation coating. The method includes (1) fully mixing Sb2Te3, Te and Bi powder having purity of 99.99% in a mass percentage manner, with the mass ratio of the Sb2Te3, the Te and the Bi being 10:0.8-1.2:0.8-1.2, and pressing the mixture of the Sb2Te3, the Te and the Bi under 8-10 MPa to obtain a block; (2) subjecting a substrate to ultrasonic cleaning in acetone, absolute ethanol and deionized water respectively and blow-drying the substrate with nitrogen; (3) putting theblock obtained by pressing 0.1-0.2 g of the mixture of the Sb2Te3, the Te and the Bi into a tungsten boat in a vacuum chamber of a vacuum coating machine; (4) feeding nitrogen into the vacuum chamberfor 2-5 min to allow the vacuum degree to range from 2.0*10<-4> Pa to 5.0*10<-4> Pa; (5) setting a heating temperature to be 240-280 DEG C; (6) after the temperature rises, setting a deposition rate to be 10-20 nm / min and deposition time to be 2-3 h on a PID controller; and (7) starting an alternating current power supply, adjusting an output current to be 160-170 A, and preparing the tilted nanowire array structural (Sb,Bi)<2>Te3 membrane. Preparation is simple and effects are significant.

Description

technical field [0001] The invention relates to a method of preparing a tilted nanowire array structure (Sb, Bi) by physical vapor deposition 2 Te 3 The invention relates to a film method, in particular to a method for preparing an antimony telluride-based film with an inclined nanowire array structure by evaporation coating. Background technique [0002] As a new type of clean energy technology, thermoelectric conversion has attracted widespread attention internationally in recent years, especially its application to industrial waste heat, waste heat utilization and solar thermal composite power generation, which is expected to improve energy utilization and alleviate environmental pollution. Questions provide an approach to integration and coordination. Thermoelectric materials can realize direct conversion of thermal energy and electrical energy through the transport of carriers in solids. They are functional materials that can directly convert thermal energy and electr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/24
CPCC23C14/0623C23C14/24
Inventor 谭明郝延明谢宁秦月婷焦永芳吴泽华
Owner TIANJIN UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap