Phase change storage device based on antimony telluride composite phase change material and preparation method thereof

A composite phase-change material and phase-change storage technology, which is applied in the field of phase-change storage devices and its preparation, can solve the problems of unfavorable memory data retention, no reporting of doping substances, and non-practicability, etc., to improve data retention capabilities , Reduce the RESET operating current, the effect of increasing the crystal resistivity

Inactive Publication Date: 2010-12-15
SHANGHAI JIAO TONG UNIV
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Problems solved by technology

Sb x Te 1-x Although the alloy material has a high crystallization rate, its crystallization temperature is too low, which is not conducive to the data retention of the memory, and must be modified by doping
In this technology, Lankhorst et al. used doped SbTe film as a phase-change storage medium, but did not report specific doping substances, so it is not practicable

Method used

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  • Phase change storage device based on antimony telluride composite phase change material and preparation method thereof
  • Phase change storage device based on antimony telluride composite phase change material and preparation method thereof
  • Phase change storage device based on antimony telluride composite phase change material and preparation method thereof

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Embodiment

[0044] Such as figure 1 As shown, the phase change memory device based on the antimony telluride composite phase change material involved in this embodiment includes: a substrate 1, a lower electrode 2, a heat generating electrode layer 3, an insulating layer 4, a phase change material layer 5 and an upper electrode 6 , wherein: the lower electrode 2 is arranged on the substrate 1, the heat generating electrode layer 3 is arranged on the lower electrode 2, the insulating layer 4 is arranged on the heat generating electrode layer 3, a fine hole 7 is arranged in the insulating layer 4, and the phase change material layer 5 is filled in the pores 7 of the insulating layer 4 and is in contact with the heat generating electrode layer 3 , and the upper electrode 6 is disposed on the phase change material layer 5 .

[0045] The heat generating electrode layer 3 is provided with a lower electrode outlet 8 communicating with the lower electrode 6 .

[0046] The substrate 1 is a silico...

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Abstract

The invention relates to a phase change storage device based on an antimony telluride composite phase change material and a preparation method thereof, belonging to the field of computer technology. The device comprises a substrate, a lower electrode, a heat generation electrode layer, an insulating layer, a phase change material layer and an upper electrode, wherein the phase change material layer is a composite phase change material layer containing antimony telluride and silicon nitride; the atom percent content range of the silicon nitride is 0.5-30; and the proportional range of Sb atoms and Te atoms in the phase change material layer is 80/20-30/70. The composite phase change material layer which has high crystallization velocity and higher heat generation efficiency is used by the phase change storage device of the invention, thus the operation velocity of the phase change storage device can be improved, and the RESET operation current of the phase change storage device can be lowered.

Description

technical field [0001] The invention relates to a device in the field of computer technology, in particular to a phase change storage device based on an antimony telluride composite phase change material and a preparation method thereof. Background technique [0002] Phase change memory is a new semiconductor non-volatile storage device. Compared with the existing dynamic random access memory (DRAM), it has the characteristics of non-volatility, that is, when it is set to any state, even if the power is cut off, the storage unit remains is the resistance value for this state, unless the state of the memory cell is reset. Compared with the existing non-volatile memory FLASH (flash memory), it can work in a smaller device size, has faster erasing speed, more erasing times, better data retention, and has no need Rewriting, compatibility with CMOS (complementary metal oxide semiconductor) technology and radiation resistance, etc., so phase change memory is considered to be a ne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 冯洁郭岗
Owner SHANGHAI JIAO TONG UNIV
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