Metal-doped tungsten disulfide thermoelectric material and preparation method

A technology of thermoelectric material and tungsten disulfide, which is applied in the direction of lead wire material of thermoelectric device and the manufacture/processing of thermoelectric device, etc. The effect of easy mass preparation, improved ZT value, and high Seebeck coefficient

Active Publication Date: 2017-06-27
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although WS 2 The Seebeck coefficient is relatively high, but WS 2 The conductance of tungsten disulfide is very poor, which leads to the poor thermoelectric properties of tungsten disulfide itself
In 2010, Jong-Young Kim et al studied WS 2 The thermoelectric properties of the study showed that WS 2 The Seebeck coefficient can reach 500-600μV / K, while the conductance is only 10-500S / m. In 2011, the research group of Jonathan N.Coleman prepared WS 2 -SWNT (single-walled carbon nanotube) film, the electrical conductivity of this film can reach 10000S / m, but the Seebeck coefficient is very low, only 60-80μV / K, making the power factor only 120μW / (mK 2 )

Method used

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  • Metal-doped tungsten disulfide thermoelectric material and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0036] Ti-doped Ti x WS 2 , the specific preparation method is as follows:

[0037] (1) Solid mixing: when x=0.1, according to Ti and WS 2 Weigh Ti and WS at a molar ratio of 0.1 2 Powder, the Ti powder is 325 mesh (45 μm), the total mass of the powder is 10g, and then the two are put into an agate mortar, and mechanically ground for 90min with a grinder at 90rpm to mix the two evenly.

[0038] (2) Sample sintering: Put the uniformly mixed solid into a graphite mold with an inner diameter of 13.1mm, then put the mold into the furnace body of the SPS sintering instrument, pressurize to 50MPa, and then evacuate, when the vacuum reaches 5Pa , start sintering, gradually increase the current, raise the temperature to 1500°C after 30 minutes, keep it for 10 minutes, then start to cool down, close the sintering program, remove the pressure, adjust the current to 0, and let the sample cool down naturally.

Embodiment 2

[0040] V doped V x WS 2 , the preparation method is as follows:

[0041] (1) Solid mixing: when x=0.2, press V and WS 2 Weigh V and WS at a molar ratio of 0.2 2 Powder, the size of the V powder is 100-200 mesh, and then the powder is put into an agate mortar, the total mass of the powder is 10g, and the grinder is used for mechanical grinding at 90rpm for 90min to mix the two evenly.

[0042] (2) Sample sintering: Put 10g of solids mixed uniformly into a graphite mold with an outer diameter of 40mm and an inner diameter of 13.1mm, then put the mold into the sintering furnace body, apply a pressure of 6.3KN to make the pressure reach 50MPa, and then Start to raise the temperature, raise the temperature to 1500°C after 40 minutes, keep the temperature for 10 minutes, then start to lower the temperature, close the sintering program, release the pressure, and let the sample cool down naturally.

Embodiment 3

[0044] Ta doped Ta x WS 2 , the preparation method is as follows:

[0045] (1) Solid mixing: when x=0.05, according to Ta and WS 2 Weigh Ta and WS at a molar ratio of 0.05 2 Powder, the size of the Ta powder used here is 325 mesh, and the total powder mass is 10g. The weighed solid is put into a mortar, and mechanically ground for 90min with a grinder at 90rpm to mix the two evenly.

[0046] (2) Sample sintering: Put 10g of solids mixed evenly into a graphite mold, then put the mold into the sintering furnace body, apply a pressure of 6.3KN, make the pressure reach 50MPa, vacuumize to 5Pa, then start to heat up, after 30min Raise the temperature to 1500°C, keep the temperature constant for 10 minutes, then start to cool down, close the sintering program, release the pressure, and let the sample cool down naturally.

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Abstract

The invention relates to a series of metal-doped tungsten disulfide thermoelectric materials and a preparation method. The metal-doped tungsten disulfide thermoelectric materials have a chemical general formula of MxWS2, wherein M is one or more than two selected from Ti, V, Nb, Zr, Ta, Hf, Yb and Re, x is a mole fraction of the M metal to WS2 and 0<x< / =1. The material preparation method comprises steps: solid powder mixing and material spark plasma sintering are carried out, metal and tungsten sulfide are firstly weighed at a certain molar ratio, mechanical grinding and mixing are carried out, the mixed powder is subjected to spark plasma sintering under proper pressure and temperature, and an MxWS2 thermoelectric material is obtained after sintering. The thermoelectric material of the invention has high conductance and Seebeck coefficients, the thermoelectric performance is good, and besides, the MxWS2 material can be applied to fields such as electrochemistry, photoelectrocatalysis and electronic devices.

Description

technical field [0001] The invention relates to a novel thermoelectric material, that is, a metal-doped tungsten disulfide thermoelectric material and a preparation method thereof, belonging to the field of thermoelectricity. Background technique [0002] Thermoelectric material is a material that directly converts thermal energy into electrical energy. The performance of thermoelectric material can be expressed by thermoelectric figure of merit ZT, and thermoelectric figure of merit ZT=S 2 σT / K, power factor PF=S 2 σ, S represents the Seebeck coefficient, σ represents the conductance, T represents the temperature, and K represents the thermal conductance. Thermoelectric materials require high electrical conductivity, high Seebeck coefficient, and low thermal conductivity, so that they can have high thermoelectric figure of merit ZT. At present, the most widely studied thermoelectric materials are tellurides and antimonides containing heavy elements. Although these materia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 包信和姜鹏黄志伟
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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