87results about How to "Increased ZT value" patented technology

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-n-zQ'nSez, where Q' is at least one selected from the group consisting of O and S, 0<x@0.5, 0<n@2 and 0@z<2.

The invention belongs to the field of oxide ceramic materials and preparation methods thereof and particularly relates to a Bi2O2Se-based thermoelectric material and a preparation method thereof. The method comprises the steps of firstly, weighing Bi2O3 powder, Bi powder, Se powder and SnO2 powder according to the stoichiometric ratio: Bi2-xSnxO2Se (0<=x<=0.10), mixing, then, carrying out vacuum tube sealing, and calcining to finish a phase forming stage; and compacting the calcined powder, and sintering by using SPS discharge plasmas to obtain the pure-phase and Sn doped Bi2O2Se-based thermoelectric material. Compared with the traditional hot-pressed sintering method, the preparation method has the advantages of uniformity in heating, high heating speed, short sintering time and the like; the defects of long reaction time, high sintering energy consumption, high operation difficulty and the like in the prior art can be effectively overcome; and the performance of a sintered sample is obviously changed, and the ZT value of the Bi2O2Se-based thermoelectric material can be greatly increased after Sn is doped.

The invention discloses a preparation method of an N-type bismuth telluride-based thermoelectric material. Firstly, the corresponding raw materials are weighed according to the stoichiometric ratio of the N-type bismuth telluride-based crystal material, placed in a quartz tube for vacuum packaging, and shaken at high temperature. Melting, using the zone melting method to prepare N-type bismuth telluride-based crystal materials; using N-type bismuth telluride-based crystal materials as a reaction matrix, using I 2 The molecule is used as an insertion compound, and the reaction matrix and the insertion compound are placed at both ends of the quartz tube; the area where the reaction matrix and the insertion compound are placed is simultaneously heated to a certain temperature and kept warm to realize the I 2 Molecular adsorption; and then the two areas were lowered to room temperature by means of zonal cooling to obtain I 2 Molecularly embedded N-type bismuth telluride-based thermoelectric materials. This method not only ensures the orientation and electrical properties of N-type Bismuth Telluride, but also reduces the lattice thermal conductivity, thereby realizing the coordinated regulation of the electrical and thermal transport properties of N-type Bismuth Telluride-based thermoelectric materials and the adjustment of the ZT value. improve.