Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof

A bismuth telluride-based, thermoelectric material technology, applied in chemical instruments and methods, polycrystalline material growth, self-regional melting method, etc., can solve problems such as inability to disperse, achieve improved ZT value, improved thermoelectric properties, and improved mechanical properties Effect

A bismuth telluride-based, thermoelectric material technology, applied in chemical instruments and methods, polycrystalline material growth, self-regional melting method, etc., can solve problems such as inability to disperse, achieve improved ZT value, improved thermoelectric properties, and improved mechanical properties Effect

CN101994155AActive Publication Date: 2011-03-30NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof
  • Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof
  • Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The bismuth telluride-based thermoelectric material doped with nanophase is based on the bismuth telluride-based thermoelectric material composed of tellurium element, bismuth element and antimony element. The chemical molecular formula of the matrix is ​​(Bi 0.22 Sb 0.78 ) 2 Te 3 , the one-dimensional nano-phase attapulgite is doped in the matrix, and the attapulgite is referred to as ATP, and the mass of the one-dimensional nano-phase attapulgite accounts for 0.5% of the mass of the matrix.

[0029] The preparation method of the bismuth telluride-based thermoelectric material doped with the nanometer phase is as follows:

[0030] Step 1: According to (Bi 0.22 Sb 0.78 ) 2 Te 3 In the stoichiometric ratio, take high-purity matrix raw materials tellurium, bismuth and antimony blocks, and weigh attapulgite powder according to the mass of one-dimensional nano-phase attapulgite accounting for 0.5% of the mass of the matrix;

[0031] Step 2: Put the one-dimensional na...

Embodiment 2

[0038] The bismuth telluride-based thermoelectric material doped with nanophase is based on the bismuth telluride-based thermoelectric material composed of tellurium element, bismuth element and antimony element. The chemical molecular formula of the matrix is ​​(Bi 0.22 Sb 0.78 ) 2 Te 3 , the one-dimensional nano-phase attapulgite is doped in the matrix, and the mass of the one-dimensional nano-phase attapulgite accounts for 0.05% of the mass of the matrix.

[0039] The preparation method of the bismuth telluride-based thermoelectric material doped with the nanometer phase is as follows:

[0040] Step 1: According to (Bi 0.22 Sb 0.78 ) 2 Te 3 In the stoichiometric ratio, take high-purity matrix raw materials tellurium, bismuth and antimony blocks, and weigh attapulgite powder according to the mass of one-dimensional nano-phase attapulgite accounting for 0.05% of the mass of the matrix;

[0041] Step 2: Put the one-dimensional nano-phase attapulgite powder that has been...

Embodiment 3

[0047] The bismuth telluride-based thermoelectric material doped with nanophase is based on the bismuth telluride-based thermoelectric material composed of tellurium, bismuth, antimony and iodine as the matrix. The chemical formula of the matrix is ​​(Bi 0.92 Se 0.08 ) 2 Te 3 / 0.15wt.%TeI 4 , namely TeI 4 Accounting for 0.15% of the mass of the matrix, the matrix is ​​doped with single-arm carbon nanotubes (SCNT), and the mass of the single-arm carbon nanotubes accounts for 0.5% of the mass of the matrix.

[0048] The preparation method of the bismuth telluride-based thermoelectric material doped with the nanometer phase is as follows:

[0049] Step 1: According to (Bi 0.92 Se 0.08 ) 2 Te 3 / 0.15wt.%TeI 4 In the stoichiometric ratio, take high-purity matrix raw material tellurium, bismuth and antimony blocks, weigh the single-arm carbon nanotube powder according to the mass of the single-arm carbon nanotube accounts for 0.5% of the mass of the matrix;

[0050] Step 2...

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Abstract

The invention discloses a nanophase doped bismuth telluride-based thermoelectric material and a preparation method thereof. The bismuth telluride-based thermoelectric material is characterized in taking the bismuth telluride-based thermoelectric material containing a tellurium element, a bismuth element and a doped chemical element, as a matrix. The doped nanophase is a one-dimensional nanophase,and the weight of the one-dimensional nanophase accounts for 0.01-5 percent of the weight of the matrix. Attapulgite or a zinc oxide nanowire or a single-wall carbon nanotube or a multi-wall carbon nanotube is preferable to the one-dimensional nanophase. Compared with the prior art, in the bismuth telluride-based thermoelectric material, the lattice heat conductivity within the whole temperature zone range is reduced, thereby a ZT value is greatly improved and the thermoelectric performance of the bismuth telluride-based thermoelectric material is improved. The preparation method is simple and easy to implement, and compared with other methods of balling milling or liquid phase and the like, impurities are not easy to introduce in the preparation method so that the one-dimensional nanophase is evenly staggered and distributed in the matrix and the mechanical property of the material is effectively improved.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, and in particular relates to a nano-phase doped bismuth telluride-based thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric conversion technology is a technology that uses the Seebeck effect of materials to directly convert heat energy into electrical energy, or uses the Peltier effect of materials for refrigeration. This technology has the characteristics of no moving parts, high reliability, long life and environmental friendliness. , can be widely used in waste heat power generation, space power supply, medical refrigeration, household refrigeration appliances and other fields. [0003] The thermoelectric conversion efficiency mainly depends on the dimensionless thermoelectric performance factor ZT of the material, ZT=S 2 σT / κ, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature...

Claims

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Application Information

Patent Timeline
30 Mar 2011
Publication
CN101994155A
IPC
C30B29/46; C30B13/00
Inventors
熊震; 蒋俊