82 results about "Lattice thermal conductivity" patented technology

The invention discloses a preparation method of an N-type bismuth telluride-based thermoelectric material. Firstly, the corresponding raw materials are weighed according to the stoichiometric ratio of the N-type bismuth telluride-based crystal material, placed in a quartz tube for vacuum packaging, and shaken at high temperature. Melting, using the zone melting method to prepare N-type bismuth telluride-based crystal materials; using N-type bismuth telluride-based crystal materials as a reaction matrix, using I 2 The molecule is used as an insertion compound, and the reaction matrix and the insertion compound are placed at both ends of the quartz tube; the area where the reaction matrix and the insertion compound are placed is simultaneously heated to a certain temperature and kept warm to realize the I 2 Molecular adsorption; and then the two areas were lowered to room temperature by means of zonal cooling to obtain I 2 Molecularly embedded N-type bismuth telluride-based thermoelectric materials. This method not only ensures the orientation and electrical properties of N-type Bismuth Telluride, but also reduces the lattice thermal conductivity, thereby realizing the coordinated regulation of the electrical and thermal transport properties of N-type Bismuth Telluride-based thermoelectric materials and the adjustment of the ZT value. improve.

A method to control thermal energy transport uses mobile coherent interfaces in nanoscale ferroelectric films to scatter phonons. The thermal conductivity can be actively tuned, simply by applying an electrical potential across the ferroelectric material and thereby altering the density of these coherent boundaries to directly impact thermal transport at room temperature and above. The invention eliminates the necessity of using moving components or poor efficiency methods to control heat transfer, enabling a means of thermal energy control at the micro- and nano-scales.