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Mg-Si-Sn-based nano-composite thermoelectric material and preparation method thereof

A mg-si-sn, nano-composite technology, applied in the field of Mg-Si-Sn-based nano-composite thermoelectric materials and its preparation, to achieve the effect of reducing lattice thermal conductivity, improving electrical conductivity and power factor, and reducing interface pollution

Inactive Publication Date: 2014-10-22
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, no literature and patents have reported Mg-Si-Sn-based thermoelectric materials with coherent / semi-coherent nanostructures.

Method used

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  • Mg-Si-Sn-based nano-composite thermoelectric material and preparation method thereof
  • Mg-Si-Sn-based nano-composite thermoelectric material and preparation method thereof
  • Mg-Si-Sn-based nano-composite thermoelectric material and preparation method thereof

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preparation example Construction

[0047] In the present invention, the process flow of preparing Mg-Si-Sn-based nanocomposite thermoelectric material by using a radio frequency induction furnace medium-speed cooling method and a heat treatment method, such as figure 1 As shown, the preparation method at least includes the following steps:

[0048] Step S1, according to the general chemical formula Mg 2 Si x Sn 1-x M y The stoichiometric ratio of the middle elements is weighed into the elemental raw materials Mg, Si, Sn and M, where the Mg excess is 3%-10% by atomic percentage to compensate for the evaporation loss of Mg in the subsequent high temperature process; where M is represented by Sb, Bi, One of Ga, Ag, Cu or Al, 0.3≤x≤0.9, 0.005≤y≤0.15;

[0049] Step S2, the weighed raw materials are sealed in a double-layer container composed of inert ceramics / conductive inductors, and then the container is placed in a radio frequency induction furnace to be heated to a first temperature, kept at the first temperature for...

Embodiment 1

[0056] In a glove box filled with nitrogen, the stoichiometric ratio of Mg 2.10 Si 0.3 Sn 0.7 Sb 0.03 Weigh the elemental raw materials Mg, Si, Sn, and Sb, and seal these raw materials in a double-layer container composed of inert ceramics / conductive inductors, and then place them in a radio frequency induction furnace, and heat to 1000°C under the protection of high-purity nitrogen. Keep it for 30 minutes to fully melt, and then cool down to 600℃ at a rate of 20℃ / min. After keeping it for 30 minutes, it will be quickly cooled to room temperature, and then transferred to a heating furnace with uniform temperature distribution and annealed at 600℃ under the protection of high-purity nitrogen. After hours, cooling at a rate of 5K / min, a Mg-Si-Sn-based thermoelectric material with a layered modulated doped structure and a coherent nanostructure is obtained.

[0057] After obtaining the required thermoelectric material, the morphology analysis and performance test of the material are ...

Embodiment 2

[0064] In a glove box filled with nitrogen, the stoichiometric ratio of Mg 2.10 Si 0.3 Sn 0.7 Bi 0.015 Weigh the elemental Mg, Si, Sn, and Bi raw materials, seal these raw materials in a double-layer container composed of inert ceramics / conductive inductors, and then place them in a radio frequency induction furnace, and heat to 1000°C under the protection of high-purity argon. Keep it for 35 minutes to fully melt, then cool down to 600°C at a rate of 20°C / min, quickly cool to room temperature after holding for 30 minutes, and then transfer to a heating furnace with uniform temperature distribution and anneal at 600°C under the protection of high-purity argon After 40 hours of cooling at a rate of 5K / min, an Mg-Si-Sn-based thermoelectric material with a layered modulated doped structure and a coherent nanostructure is obtained.

[0065] After obtaining the required thermoelectric material, the morphology analysis and performance test of the material are carried out.

[0066] XRD an...

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Abstract

The invention provides a Mg-Si-Sn-based nano-composite thermoelectric material and a preparation method thereof. The Mg-Si-Sn-based nano-composite thermoelectric material has a layered structure, and the chemical general formula of the Mg-Si-Sn-based nano-composite thermoelectric material is Mg2SixSn1-xMy, wherein M is a doping element and is one selected from Sb, Bi, Ga, Ag, Cu and Al, x is not less than 0.3 and not more than 0.9, and y is not less than 0.005 and not more than 0.15; the structures of all layers have different Mg:Si:Sn atom mole content ratios and different M doping concentrations; and the structure of each of all the layers comprises a Mg-Si-Sn matrix and a Mg-Si-Sn nanometer grain second phase dispersed in the matrix to form a coherent interface or a semi-coherent interface. The Mg-Si-Sn-based nanocomposite thermoelectric material has a coherent interface and a modulation-doped structure, so the Mg-Si-Sn-based nanocomposite thermoelectric material has the advantages of low thermal conductivity of lattices, and good thermoelectricity performance, and can be widely used in the fields of spaceflight, national defense, automotives and the like.

Description

Technical field [0001] The invention belongs to the field of semiconductor thermoelectric materials, and relates to a Mg-Si-Sn-based nanocomposite thermoelectric material and a preparation method thereof, in particular to a Mg-Si-Sn-based nanocomposite thermoelectric material with a coherent interface and a modulated doping structure Materials and methods of preparation. Background technique [0002] Energy shortages and environmental pollution have become serious global problems, but two-thirds of the energy is lost in the form of waste heat in the process of energy use. Thermoelectric material is a new type of functional material that can not only use waste energy such as automobile exhaust heat, industrial waste heat, hot spring heat, etc., to generate electricity, but also replace Freon as an environmentally friendly and clean refrigerant. Because thermoelectric materials use electrons and hole carriers in solid materials to directly convert heat and electric energy, they ha...

Claims

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Application Information

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IPC IPC(8): C22C23/00C22C1/02C22F1/06
Inventor 陈海燕陈小源王春林林珊珊赵玲杨康王会利
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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