A mg-si-sn based nanocomposite thermoelectric material and its preparation method
A mg-si-sn, nano-composite technology, applied in the field of Mg-Si-Sn-based nano-composite thermoelectric materials and its preparation, to achieve the effect of improving electrical conductivity and power factor, reducing lattice thermal conductivity, and reducing interface pollution
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[0047] The present invention adopts the technological process of preparing Mg-Si-Sn-based nano-composite thermoelectric materials by the medium-speed cooling method of radio frequency induction furnace and heat treatment method, such as figure 1 As shown, the preparation method at least includes the following steps:
[0048] Step S1, according to the general chemical formula Mg 2 Si x sn 1-x m y The stoichiometric ratio of the elements in the medium is to weigh the elemental raw materials Mg, Si, Sn and M, and the Mg is in excess of 3% to 10% by atomic percentage to compensate for the evaporation loss of Mg in the subsequent high temperature process; where M is expressed as Sb, Bi, One of Ga, Ag, Cu or Al, 0.3≤x≤0.9, 0.005≤y≤0.15;
[0049] Step S2, sealing the weighed raw materials in a double-layer container composed of inert ceramics / conductive sensors, and then placing the container in a radio frequency induction furnace to heat it to the first temperature, keeping it a...
Embodiment 1
[0056] In a glove box filled with nitrogen, according to the stoichiometric ratio of Mg 2.10 Si 0.3 sn 0.7 Sb 0.03 Weigh the elemental raw materials Mg, Si, Sn, and Sb, seal these raw materials in a double-layer container composed of inert ceramics / conductive sensors, then place them in a radio frequency induction furnace, and heat them to 1000°C under the protection of high-purity nitrogen. Insulate for 30 minutes to fully melt, then cool down to 600°C at a rate of 20°C / min, quickly cool to room temperature after holding for 30 minutes, and then transfer to a heating furnace with uniform temperature distribution and anneal at 600°C for 20 minutes under the protection of high-purity nitrogen. Hours, after cooling at a rate of 5K / min, a Mg-Si-Sn-based thermoelectric material with a layered modulation doped structure and a coherent nanostructure is obtained.
[0057] After the desired thermoelectric material is obtained, the morphology analysis and performance test of the mat...
Embodiment 2
[0064] In a glove box filled with nitrogen, according to the stoichiometric ratio of Mg 2.10 Si 0.3 sn 0.7 Bi 0.015 Weigh the elemental Mg, Si, Sn, Bi raw materials, seal these raw materials in a double-layer container composed of inert ceramics / conductive sensors, then place them in a radio frequency induction furnace, and heat them to 1000°C under the protection of high-purity argon. Keep warm for 35 minutes to fully melt, then cool down to 600°C at a rate of 20°C / min, quickly cool to room temperature after holding for 30 minutes, and then transfer to a heating furnace with uniform temperature distribution and anneal at 600°C under the protection of high-purity argon After cooling for 40 hours at a rate of 5K / min, a Mg-Si-Sn-based thermoelectric material with a layered modulation doped structure and a coherent nanostructure was obtained.
[0065] After the desired thermoelectric material is obtained, the morphology analysis and performance test of the material are carried...
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