16 results about "Modulation doping" patented technology

A modulation doping-based high-mobility semiconductor device according to an embodiment of the present invention comprises: a substrate; a channel layer formed on the substrate; a doped layer stacked on the channel layer and band-aligned with the channel layer to be heterojunctioned with the channel layer; an oxide layer formed on the doped layer and a spacer region of the channel layer; and a first electrode and a second electrode coupled to both end portions of the channel layer, respectively, wherein the oxide layer is formed by oxidizing an initial doped layer and the spacer region of the channel layer before an oxidation process through a monolithic oxidation process.

The invention provides a silicon carbide epitaxial structure and a preparation method thereof, and belongs to the technical field of semiconductors, and the silicon carbide epitaxial structure comprises a silicon carbide substrate, a gradient buffer layer, a growth interruption region, a conventional buffer layer and a drift layer which are sequentially arranged from bottom to top; the gradient buffer layer and the growth interruption region generate lattice strain by means of a doping concentration gradient change to reduce base plane dislocation and stacking fault density. According to the silicon carbide epitaxial structure provided by the invention, a gradual change buffer layer formed by interface modulation doping is arranged on a silicon carbide substrate, and a growth interruption region is formed on the gradual change buffer layer by a growth interruption process; the gradient buffer layer is formed in a doping concentration gradient mode, lattice strain and lattice stress between the substrate and the drift layer are modulated, the base plane dislocation density and stacking fault density of an epitaxial wafer are effectively reduced, and the quality of a silicon carbide epitaxial structure is remarkably improved.

The invention provides a Fin-HEMT (High Electron Mobility Transistor) with an aluminum oxide gallium nitride gallium oxide heterojunction and a manufacturing method of the Fin-HEMT. A buffer layer and a channel layer in the Fin-HEMT are sequentially arranged on a substrate; grooves are periodically etched in the channel layer along the gate width direction so as to construct and form a Fin structure; the doping layer and the barrier layer are sequentially arranged on the channel layer; wherein the channel layer is a beta-Ga2O3 layer, the doping layer is delta-Si doped beta-(AlxGa1-x) 2O3 as a delta modulation doping layer, an insertion channel layer is further arranged between the channel layer and the doping layer, the insertion channel layer is a GaN layer, the barrier layer is an unintentionally doped beta-(AlxGa1-x) 2O3 layer, and the barrier layer, the doping layer, the insertion channel layer and the channel layer are in contact to form a beta-(AlxGa1-x) 2O3 / GaN / Ga2O3 heterojunction structure. Two-dimensional electron gas is generated on one side, facing the doping layer, of the insertion channel layer; the grid electrode is arranged on the barrier layer. The Fin-HEMT is provided with a beta-(Al < x > Ga < 1-x >) < 2 > O < 3 > / GaN / Ga < 2 > O < 3 > heterojunction, 2DEG is generated on one side of an insertion channel layer at a heterojunction interface through deliberately doped delta-Si modulation, the channel mobility is improved, the on-resistance is reduced, and a certain improvement effect is achieved on the channel mobility by adopting a Fin structure.

The application discloses an electrically controlled InAs / GaAs quantum dot van der Waals heterojunction SESAM structure, which comprises a semi-insulating GaAs substrate, a reflection layer and an absorption layer, wherein the reflection layer is located on the upper layer of the semi-insulating GaAs substrate, the reflection layer is composed of a plurality of cycles of Si-doped GaAs / Al 0.98 Ga 0.02 As distributed Bragg reflector at the bottom; the middle part of the absorption layer is an absorption zone of the SESAM, the absorption zone is composed of inserting an InAs quantum dot layer (QD) with a thickness of 2.9 molecular layers between a 1nm-thick InGaAs bottom buffer layer and a 6nm-thick InAs / GaAs / InGaAs short-period superlattice cover layer, and 50nm-thick modulated Si-doped GaAs layers are respectively added to the upper and lower parts of the absorption layer to form a double two-dimensional electron gas structure.

The invention provides a modulation-doped aluminum nitride / diamond heterojunction material and a preparation method, and belongs to the technical field of semiconductors, and the preparation method comprises the following steps: preparing a hydrogen terminal layer on a diamond substrate to form a hydrogen terminal diamond substrate; growing an intrinsic aluminum nitride layer on the hydrogen terminal layer in an oriented manner; and modulating and growing a magnesium-doped aluminum nitride functional layer on the intrinsic aluminum nitride layer to form a hierarchical interface charge transport channel. According to the preparation method of the modulation-doped aluminum nitride / diamond heterojunction material provided by the invention, directional regulation and control of interface carriers are realized through hierarchical structural design of the surface of the hydrogen terminal diamond in combination with precise process control of pulse laser deposition, the carrier mobility and charge transport efficiency of the heterojunction are remarkably improved, and the performance of the material is improved. The aluminum nitride / diamond heterojunction material with high electrical characteristics is obtained, and the technical contradiction that process feasibility and electrical property optimization cannot be considered in the prior art is solved.

The invention discloses a tungsten-doped ZrNiSn thermoelectric composite material as well as a preparation method and application thereof, ZrNiSn is taken as a matrix, ZrNiSn powder and W nanoparticles are uniformly mixed, and the ZrNiSn-W thermoelectric composite material is obtained through rapid densification treatment. Through the combination of tungsten modulation doping and an energy filtering effect, the bottleneck of half-Heusler material PF-zT coupling optimization is broken through, and the PF and zT values of the thermoelectric material are significantly improved; according to the invention, the hafnium element is abandoned, a large-scale and low-cost solution is provided for large-scale application of the half-Heusler thermoelectric material, the raw material cost is reduced by more than 95%, and an economical solution is provided for large-scale deployment of the thermoelectric material.

N-channel modulation-doped field-effect transistors (N-MODFETs) in which a two-dimensional electron gas (2DEG) channel is formed in intrinsic diamond are provided. The n-MODFETs can be made using bandgap engineering and a transfer and grafting process to couple intrinsic diamond, which has a very high electron mobility, with a highly n-type doped aluminum gallium nitride (AlGaN) alloy as an electron donor material to realize a high-cutoff frequency (fT) MODFET for radiofrequency (RF) electronics applications.

The present invention discloses a high-performance self-powered diamond-based heterojunction solar-blind detector, which comprises, from bottom to top, a diamond single crystal substrate, a p-type diamond film, a Ga polarity control layer, an intrinsic i-Ga2O3 light absorption layer, a δ modulation doping layer, an AlO dielectric layer and a top interdigitated electrode; the cross-sectional length of the diamond single crystal substrate is consistent with the cross-sectional length of the p-type diamond film; the cross-sectional lengths of the Ga polarity control layer, the intrinsic i-Ga2O3 light absorption layer, the δ modulation doping layer and the AlO dielectric layer are all the same; and the Ga polarity control layer is the same as the Ga polarity control layer. The cross-sectional length of the control layer is smaller than that of the p-type diamond film; the Ga polarity control layer, the intrinsic i-Ga2O3 light absorption layer, the δ modulation doping layer, and the AlO dielectric layer are arranged in the middle of the p-type diamond film; two p-type diamond films are provided on the p-type diamond film; the p-type diamond film is located on both sides of the Ga polarity control layer; the top interdigitated electrode is embedded in the AlO dielectric layer; the δ modulation doping layer adopts periodic δ-type modulation doping technology to perform n-type Ga2O3 doping to obtain a high concentration of carriers.

The present invention discloses a deep ultraviolet LED with a modulation-doped electron blocking layer structure and a preparation method thereof. The deep ultraviolet LED with the modulation-doped electron blocking layer structure includes a sapphire substrate, an AlN intrinsic layer, an n-type AlGaN electron injection layer, a quantum well active layer, a modulation-doped electron blocking layer, and a p-type AlGaN hole injection layer which are sequentially stacked. The modulation-doped electron blocking layer includes a plurality of first blocking layers and second blocking layers which are alternately arranged; both the first blocking layer and the second blocking layer contain Mg doping, and the Mg doping concentration of the first blocking layer is greater than that of the second blocking layer; or both the first blocking layer and the second blocking layer do not contain Mg doping, and Mg doping is carried out at the interface between the first blocking layer and the second blocking layer. By modulating the doping of the electron blocking layer, the present invention improves the Mg doping efficiency, effectively prevents Mg from diffusing into the active region, and improves the light emission efficiency of the deep ultraviolet LED.

This invention discloses a deep ultraviolet LED with a modulation-doped multiple quantum well structure and its fabrication method. The deep ultraviolet LED comprises a sapphire substrate, an intrinsic AlN layer, an N-type AlGaN layer, a current spreading layer, a modulation-doped multiple quantum well layer, an electron blocking layer, a P-type AlGaN injection layer, and a P-type GaN contact layer, which are sequentially stacked. On the one hand, this invention prevents Si diffusion into the quantum well layer by placing undoped material near the quantum well layer in the modulation quantum barrier layer; on the other hand, the doping concentration of the doped quantum barrier layer in the modulation-doped multiple quantum well layer gradually decreases along the direction from the N-type AlGaN layer to the P-type AlGaN injection layer, thereby limiting electron overflow, enhancing hole migration to neighboring quantum wells, improving carrier injection efficiency, and thus improving the luminous efficiency of the deep ultraviolet LED device.

The invention provides a Fin-HEMT (High Electron Mobility Transistor) with a gallium oxide and gallium nitride heterojunction and a manufacturing method thereof. The Fin-HEMT comprises a substrate, a buffer layer, a channel layer, a doping layer, a barrier layer and a grid electrode, the buffer layer and the channel layer are sequentially arranged on the substrate; grooves are periodically etched in the channel layer along the gate width direction so as to construct and form a Fin structure; the doping layer and the barrier layer are sequentially arranged on the channel layer so as to cover the whole wafer comprising the Fin structure; the channel layer is a GaN layer, the doping layer is delta-Si doped beta-Ga2O3 as a delta modulation doping layer, the barrier layer is an unintentionally doped beta-Ga2O3 layer, the doping layer, the barrier layer and the channel layer are in contact to form a beta-Ga2O3 / GaN heterojunction structure, and two-dimensional electron gas is generated on one side, facing the doping layer, in the channel layer; the grid electrode is arranged on the barrier layer. The Fin-HEMT is provided with a beta-phase Ga2O3 / GaN heterojunction structure, 2DEG is generated on one side of a GaN channel layer at a heterojunction interface through deliberately doped delta-Si modulation, the channel mobility is improved, the on-resistance is reduced, and a certain improvement effect is achieved on the channel mobility by adopting the Fin structure.

A method includes bonding a device die onto a package component. The device die includes a semiconductor substrate, and a through-via extending into the semiconductor substrate. The method further includes depositing a dielectric liner lining sidewalls of the device die, depositing a dielectric layer on the dielectric liner, and planarizing the dielectric layer and the device die. Remaining portions of the dielectric liner and the dielectric layer form a gap-filling region, and a top end of the through-via is revealed. An implantation process is performed to introduce a stress modulation dopant into at least one of the dielectric liner and the dielectric layer. A redistribution line is formed over and electrically connecting to the through-via.

A method for manufacturing a semiconductor device is provided. A drift region and a compensation region are formed through a deep trench etching and a filling technology. A plurality of modulation doping regions are formed at a top of the drift region by an epitaxy and an ion implantation. A modulation region is introduced, wherein the modulation region flexibly modifies capacitance characteristics and achieve improved dynamic characteristics.

A method for preparing a device and its structure disclosed in an embodiment of the present application includes performing ion implantation on a second substrate to form a defect layer inside the second substrate to obtain a structure to be bonded, bonding the structure to be bonded and a first substrate to obtain a heterogeneous substrate, and bonding a third substrate and the heterogeneous substrate to obtain a heterogeneous composite substrate; the heterogeneous composite substrate includes an area to be etched, an area to be grown, and an area to be fabricated; the area to be etched, the area to be grown, and the area to be fabricated are sequentially connected. A modulation-doped field-effect transistor structure is fabricated in the area to be etched, an isolation structure is fabricated in the area to be grown, and a complementary metal-oxide-semiconductor structure is fabricated in the area to be fabricated. The modulation-doped field-effect transistor structure is connected to the complementary metal-oxide-semiconductor structure to obtain a device. The present application can be compatible with modulation-doped field-effect transistors and complementary metal-oxide-semiconductors, and can reduce thermal stress.

The invention provides a Fin-HEMT (High Electron Mobility Transistor) with an aluminum oxide gallium oxide heterojunction and a manufacturing method of the Fin-HEMT. The Fin-HEMT comprises a substrate, a buffer layer, a channel layer, a doping layer, a barrier layer and a grid electrode, the buffer layer and the channel layer are sequentially arranged on the substrate; grooves are periodically etched in the channel layer along the gate width direction so as to construct and form a Fin structure; the doping layer and the barrier layer are sequentially arranged on the channel layer so as to cover the whole wafer comprising the Fin structure; the channel layer is a beta-Ga2O3 layer, the doping layer is delta-Si doped beta-(AlxGa1-x) 2O3 as a delta modulation doping layer, the barrier layer is an unintentionally doped beta-(AlxGa1-x) 2O3 layer, the doping layer, the barrier layer and the channel layer are in contact to form a beta-(AlxGa1-x) 2O3 / beta-Ga2O3 heterojunction structure, and two-dimensional electron gas is generated on one side, facing the doping layer, in the channel layer; the grid electrode is arranged on the barrier layer. The Fin-HEMT is provided with a beta-(Al < x > Ga < 1-x >) < 2 > O < 3 > / beta-Ga < 2 > O < 3 > heterojunction structure, 2DEG is generated on one side of a beta-Ga < 2 > O < 3 > channel layer at a heterojunction interface through deliberately doped delta-Si modulation, the channel mobility is improved, the on-resistance is reduced, and a certain improvement effect is achieved on the channel mobility by adopting the Fin structure.

A method includes depositing a dielectric layer on a package component having a first warpage, and performing an implantation process to implant the dielectric layer with a stress modulation dopant. After the implantation process, the package component has a second warpage smaller than the first warpage.