III-group nitride light-emitting diode (LED) and manufacturing method thereof

Abstract

The invention discloses a III-group nitride light-emitting diode (LED) and a manufacturing method thereof. The LED comprises a substrate and a semiconductor epitaxial laminate which is laminated on the substrate, wherein the semiconductor epitaxial laminate sequentially comprises an N type layer, a luminescent layer and a P type layer from top to bottom. The LED is characterized in that: an N type layer table face is formed in the N type layer by etching a part of the semiconductor epitaxial laminate; an N type electrode is arranged on the N type layer table face; a P type electrode is arranged on the upper surface of the un-etched part of the P type layer; the N type layer also comprises a uniformly doped layer of which the doping concentration is consistent and a modulation doped layer of which the doping concentration is changeable; and the modulation doped layer is arranged between the uniformly doped layer and the luminescent layer. A doped mode of the modulation doped layer is gradual transition doping which connects uniformly doped layer and the luminescent layer of which the doping concentration is consistent. The concentration change trend is decrease progressively change from the uniformly doped layer to the luminescent layer. By the LED and the manufacturing method, the crystal quality and the luminance uniformity can be obviously improved, and the lighting effect is improved.

Description

technical field

[0001] The invention relates to a light-emitting diode, in particular to a high-power Group III nitride light-emitting diode and a manufacturing method thereof. Background technique

[0002] In the past two decades, GaN-based materials have been greatly developed in epitaxial growth and device technology, making III-nitride semiconductor materials widely used in blue / green and white light-emitting diodes, ultraviolet detectors and high-power electronic devices; In particular, currently, LED devices based on InGaN / GaN quantum wells have entered the commercialization level. Due to the extremely high cost of self-supporting GaN substrates, the homoepitaxial growth of GaN materials is extremely difficult; therefore, currently widely used substrate materials include sapphire (Al 2 o 3 ), SiC and Si. Compared with other materials, although sapphire has disadvantages such as non-conductivity and poor thermal conductivity, it has become the mainstream GaN substrat...

Images