Single crystal graphene pn node and preparation method thereof

Abstract

The invention discloses a single crystal graphene pn node and a preparation method thereof. The modulated and doped graphene pn node is prepared according to the method which comprises the following steps of 1, annealing a copper foil substrate; 2, growing a sub-monolayer intrinsic graphene island on the surface of a copper foil by taking methane as a carbon source; 3, cleaning a growing system by using inert gas; 4, taking acetonitrile steam as a nitrogen-containing carbon source and growing nitrogen doped graphene on the boundary of the intrinsic graphene island; 5, repeating the steps 2, to 4, for at least zero time to obtain the single-level or multi-level graphene pn node; 6, quickly reducing the temperature to stop a growing process; and 7, transferring the graphene pn node which is obtained through modulating, doping and growing onto any target substrate by using polymethyl methacrylate (PMMA) as a medium. The modulated and doped graphene pn node with high quality is obtained by regulating the carbon source in the graphene growing process. The product has very high migration rate and photon to current conversion efficiency; and a transfer characteristic curve of the product has a double-Dirac point, so that the single crystal graphene pn node can be applied to logic devices, such as a phase inverter and a frequency multiplier.

Description

technical field [0001] The invention relates to a single crystal graphene pn junction and a preparation method thereof. Background technique [0002] Graphene is a two-dimensional film material composed of a single layer of carbon atoms arranged in a hexagonal symmetrical honeycomb structure. Due to its excellent properties in electricity, optics, heat and mechanics, graphene has attracted extensive attention in various fields such as physics, chemistry, biology and materials since its discovery, and has also attracted extensive attention from the industry. For electron transport, the electron mobility of graphene is more than two orders of magnitude higher than that of traditional silicon materials, and the symmetrical energy band structure results in matching electron and hole mobility, so graphene is regarded as a silicon-based electronic material. strong contender. In terms of optics, graphene maintains good light transmission in the range from visible light to far inf...

AI Technical Summary

Problems solved by technology

The current methods for preparing graphene single crystal pn junctions are often based on micron-scale graphene obtained by mechanical exfoliation, which is not conducive to the expansion of scale; The top gate of graphene or the use of less stable surface adsorption to achieve local doping of graphene and the construction of pn junctions

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