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Method for MOCVD growth nitride light-emitting diode structure extension sheet

A technology of light-emitting diodes and epitaxial wafers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems that affect the quality of epitaxial layers, device performance, high forward operating voltage, and increase operating voltage, so as to improve quality and device performance. High saturation speed, effect of reducing resistance

Inactive Publication Date: 2006-12-20
EPILIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] But how to realize the growth of high-quality p-type AlGaN carrier blocking layer will directly affect the quality of the epitaxial layer and the performance of the device, and the LED produced according to the current technology has the defect of high forward operating voltage
The main reason is that AlGaN has an energy gap different from that of InGaN and GaN. Because of the double heterostructure with different energy gaps, the conduction of electrons depends on thermal energy radiation or tunneling effect, so it will generate higher resistance, that is, it will increase the operating voltage.

Method used

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  • Method for MOCVD growth nitride light-emitting diode structure extension sheet
  • Method for MOCVD growth nitride light-emitting diode structure extension sheet
  • Method for MOCVD growth nitride light-emitting diode structure extension sheet

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Embodiment 1

[0017] GaN-based ultra-high-brightness LED structure epitaxial wafers were grown using MOCVD 2000HT from AXTRON, Germany. The substrate is (0001) sapphire (Al 2 o 3 ). Such as figure 1 As shown, first, the sapphire substrate 1 is heated to 1200°C in the MOCVD reaction chamber, and treated at high temperature under hydrogen for 10 minutes; then the temperature is lowered to 490-550°C to grow the GaN nucleation layer 2, about 30 nanometers, and the TMGa flow rate is 1 *10 -4 mol / min, NH 3 The flow rate is 15 liters / minute; thereafter, the growth temperature is raised to 1160° C. to anneal the GaN nucleation layer 2, and the annealing time is between 4 and 8 minutes; after annealing, the growth temperature is raised to 1180° C. to start Epitaxial growth of the GaN buffer layer, a GaN buffer layer with a thickness of 3.5 microns is grown at a uniform speed, of which 1 micron is the unintentionally doped GaN buffer layer 3, and the last 2.5 microns is the Si-doped GaN buffer l...

Embodiment 2

[0019] GaN-based ultra-high brightness LED structure epitaxial wafers were grown by using MOCVD Gailla epitaxy of Veeco in the United States. Among them, the substrate is (0001) sapphire (Al 2 o 3 ). Such as figure 1 As shown, first, the sapphire substrate 1 is heated to 1100°C in the MOCVD reaction chamber, and treated at high temperature under hydrogen for 10 minutes; then the temperature is lowered to 490-550°C to grow the GaN nucleation layer 2, about 20 nanometers, and the TMGa flow rate is 2 *10 -4 mol / min, NH 3 The flow rate is 40 liters / minute; thereafter, the growth temperature is raised to 1060°C to anneal the nucleation layer 2, and the annealing time is between 8 minutes; after annealing, the growth temperature is raised to 1080°C, and epitaxial growth of GaN is started Buffer layer, a GaN buffer layer with a thickness of 3.5 microns grown at a uniform speed, of which 1 micron is an unintentionally doped GaN buffer layer 3, and the last 2.5 microns is a Si-dop...

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Abstract

The invention relates to a method for using MOCVD to grow nitride light emitting diode extensive plate, wherein said growing P-AlGaN carrier baffle layer uses modulated doping growing. The invention can reduce the positive operation voltage of nitride light emitting diode that extending growing, to improve the turn-on voltage and strengthen the breakdown reverse voltage.

Description

technical field [0001] The present invention relates to a metal organic vapor deposition (MOCVD) epitaxial growth method of a III-V nitride material based on gallium nitride (GaN), in particular to the growth of a nitride multi-quantum light-emitting diode structure epitaxial wafer, and Growth and doping process of p-type AlGaN carrier blocking layer. Background technique [0002] At present, III-V nitride semiconductor optoelectronic materials are known as the third-generation semiconductor materials. GaN-based high-brightness light-emitting diodes (Light emitting diodes, referred to as "LEDs") are ubiquitous in life and can be seen everywhere. Its application areas include traffic lights, mobile phone backlight, large full-color display, digital display, urban landscape lighting, etc. With the development of nitride-based high-brightness LED applications, a new generation of green and environmentally friendly solid-state lighting sources - nitride high-power white LEDs ha...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L21/205
Inventor 靳彩霞董志江黎敏丁晓民孙卓黄素梅
Owner EPILIGHT TECH
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