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N-type Mg3Sb2 alloy thermoelectric material and preparation method thereof

A technology of trimagnesium antimony and thermoelectric materials, which is applied in the field of N-type trimagnesium antimony alloy thermoelectric materials and its preparation, can solve problems such as interface phase defects and affecting material transport performance, and achieve simple dopant, Conducive to the effect of material stability and simple engineering method

Active Publication Date: 2019-09-20
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, magnesium's high saturated vapor pressure, corrosion, and high melting point often lead to the presence of interfacial phases and defects that affect the transport properties of this material

Method used

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  • N-type Mg3Sb2 alloy thermoelectric material and preparation method thereof
  • N-type Mg3Sb2 alloy thermoelectric material and preparation method thereof
  • N-type Mg3Sb2 alloy thermoelectric material and preparation method thereof

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preparation example Construction

[0059] The present invention also proposes a method for preparing the above-mentioned N-type antimony trimagnesium alloy thermoelectric material with high carrier concentration and high mobility, comprising the following steps:

[0060] (1) Vacuum packaging:

[0061] Weigh the elemental raw materials Mg, Bi, Sb and Y according to the stoichiometric ratio, use a tantalum tube with an outer diameter of 12 mm and a wall thickness of 0.5 mm with an elemental purity ≥ 99.95% and a length of about 5 cm, and use arc melting to seal the tantalum tube in an argon atmosphere At one end, put the elements required for sample preparation into the sealed tantalum tube at one end according to the ratio, and then use arc melting to seal the other end of the tantalum tube in an argon environment, and put the sealed tantalum tube into a quartz tube with an inner diameter of 15mm. Vacuum packaging in tube;

[0062] (2) Melt quenching:

[0063] Heating the quartz tube of the tantalum tube conta...

Embodiment 1

[0074] see Figure 4 As shown, a three-magnesium antimony alloy thermoelectric material, its chemical formula is Y x Mg 3.05-x SbBi, wherein, 0.002≤x≤0.03, in this embodiment, by taking x=0.002, 0.003, 0.005, 0.009, 0.012, 0.015, 0.018, 0.02, 0.025 and 0.03, that is, by changing different concentrations of Y to optimize the carrier Concentration and mobility, according to the following preparation method, Y with high carrier concentration x Mg 3.05-x SbBi bulk material:

[0075] (1) According to different x values, according to the chemical formula, it is Y x Mg 3.05-x The stoichiometric ratio of SbBi (0.002≤x≤0.03) Weigh the elemental raw materials Mg, Bi, Sb and Y with a purity greater than 99.99%, put them into tantalum tubes and vacuum seal them by arc melting, and then put the sealed tantalum tubes into quartz tube and vacuum packaged.

[0076](2) Hang the quartz tube containing the raw materials in a high-temperature well-type furnace, slowly raise the temperature...

Embodiment 2

[0100] Compared with Example 1, most of them are the same, except in this example:

[0101] In step (2), the temperature is slowly raised to 1000° C. at a rate of 150° C. per hour, kept at a temperature of 8 hours, and then rapidly quenched and cooled to obtain the first ingot.

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Abstract

The invention relates to an n-type Mg3Sb2 alloy thermoelectric material and a preparation method thereof. The chemical formula of the alloy thermoelectric material is YxMg3.05-xSbBi, wherein x is greater than or equal to 0.002 and less than or equal to 0.03; the method is characterized by comprising the steps of taking high-purity simple substance as a raw material; proportioning according to the stoichiometric ratio in the chemical formula; carrying out vacuum packaging on a tantalum tube, high-temperature melting, annealing and heat treatment; cutting into pieces with the size of 3 mm; and performing vacuum hot-pressing sintering and slowly cooling to obtain the alloy thermoelectric material. Compared with the prior art, the method has the advantages that doping of the yttrium is improved by carrying out solid-solution on magnesium bismuthide, anion electrons are introduced, so that the carrier concentration and the lattice heat conductivity can be simultaneously regulated and controlled, and meanwhile, the content of magnesium oxide in the grain boundary of the N-type Mg3Sb2 alloy is reduced by utilizing tantalum packaging smelting, so that the high migration rate is achieved.

Description

technical field [0001] The invention belongs to the technical field of alloy thermoelectric material preparation, and relates to an N-type trimagnesium antimony alloy thermoelectric material and its preparation. Background technique [0002] Thermoelectric semiconductor materials, as a new type of energy material with zero emissions and no rotating parts, can realize the conversion between waste heat and electric energy, and are considered to be an effective solution to improve the increasingly serious energy crisis. The bottleneck that limits the large-scale application of thermoelectric semiconductor materials is their relatively low conversion efficiency, which can usually be measured by the dimensionless thermoelectric figure of merit zT, zT=S 2 σT / κ, where: T is the absolute temperature, S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, determined by the electronic thermal conductivity κ E and lattice thermal conductivity κ ...

Claims

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Application Information

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IPC IPC(8): C22C12/00C22F1/16C22C1/02C22C1/04
CPCC22C12/00C22C1/02C22F1/16C22C1/047
Inventor 裴艳中李文史雪敏
Owner TONGJI UNIV
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