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Novel GeSbTe compound thermoelectric material having high concentration vacancy and preparation method thereof

A thermoelectric material, germanium antimony tellurium technology, applied in the field of new germanium antimony tellurium compound thermoelectric materials and its preparation, can solve the problems of high hole carrier concentration and difficulty in optimizing the carrier concentration range, and achieve simple dopant , It is beneficial to the stability of the material and the simple effect of the vacancy engineering method

Inactive Publication Date: 2018-11-02
TONGJI UNIV
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to thermodynamic stability, intrinsic germanium telluride inherently has a large number of cation vacancies, resulting in a high hole carrier concentration. It is relatively difficult to optimize the carrier concentration range of materials

Method used

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  • Novel GeSbTe compound thermoelectric material having high concentration vacancy and preparation method thereof
  • Novel GeSbTe compound thermoelectric material having high concentration vacancy and preparation method thereof
  • Novel GeSbTe compound thermoelectric material having high concentration vacancy and preparation method thereof

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preparation example Construction

[0045] A method for preparing a novel germanium antimony tellurium compound thermoelectric material with a high concentration of vacancies, comprising the following steps:

[0046] (1) Vacuum packaging:

[0047] Weigh the elemental raw materials Ge, Sb and Te according to the stoichiometric ratio, put them into a quartz tube and vacuum seal;

[0048] (2) Melt quenching:

[0049] Put the quartz tube containing the elemental raw material into the pit furnace to heat, so that the raw material can fully react in the molten state, and then quench to obtain the first ingot;

[0050] (3) Annealing and quenching:

[0051] The first ingot obtained in (2) is re-vacuum-packed in a quartz tube, heated in a pit furnace, annealed at a high temperature, and subsequently quenched to obtain a second ingot;

[0052] (4) hot pressing sintering:

[0053] Grinding the second ingot obtained in (3) into powder, placing it in a graphite mold, sintering with vacuum hot pressing, and then lowering ...

Embodiment 1

[0062] A silver telluride thermoelectric material whose chemical formula is Ge 1-x Sb 2x / 3 Te, x=-0.02~0.14, by taking x=0.02, 0.04, 0.06, 0.08, 0.09, 0.1, 0.12 and 0.14 in the present embodiment (when x=0, the chemical formula is GeTe, when x=0.02, 0.04, 0.06, 0.08, 0.09, 0.1, 0.12 and 0.14, that is, by changing different concentrations of Sb and vacancies to optimize the carrier concentration), according to the following preparation method, the carrier concentration of Ge 1-x Sb 2x / 3 Te bulk material:

[0063] (1) According to different x values, according to the chemical formula, it is Ge 1-x Sb 2x / 3 The stoichiometric ratio of Te (x=-0.02~0.14) Weigh the elemental raw materials germanium Ge, antimony Sb, and tellurium Te with a purity greater than 99.99%, place the raw materials in a quartz tube, and seal the quartz tube under vacuum.

[0064] (2) Hang the quartz tube containing the raw materials in a high-temperature well-type furnace, slowly raise the temperature to...

Embodiment 2

[0074] Compared with Example 1, most of them are the same, except that in step (2) of this example, the temperature is slowly raised to 900° C. at a rate of 150° C. per hour and kept for 8 hours.

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Abstract

The invention relates to a novel GeSbTe compound thermoelectric material having a high concentration vacancy and a preparation method thereof, wherein the thermoelectric material has a chemical formula of Ge1-xSb2x / 3Te, x is greater than 0 and less than or equal to 0.14; by using the high purity element as raw material, the novel GeSbTe compound thermoelectric material is obtained through grindinginto powder, vacuum hot pressing sintering and slow cooling after vacuum encapsulation, high temperature melting, and annealing heat treatment by dosing according to the stoichiometric ratio in the chemical formula. Compared with the prior art, the introduction of cationic vacancies enables simultaneous regulation of carrier concentration and lattice thermal conductivity. This simple and controllable technique may be widely applied to various thermoelectric materials, especially the materials with a large number of intrinsic defects, which provides a new approach to improving thermoelectric performance.

Description

technical field [0001] The invention belongs to the technical field of new energy materials, and relates to a novel germanium-antimony-tellurium compound thermoelectric material with high-concentration vacancies and a preparation method thereof. Background technique [0002] Thermoelectric semiconductor materials, as a new type of energy material with zero emissions and no rotating parts, can realize the conversion between waste heat and electric energy, and are considered to be an effective solution to improve the increasingly serious energy crisis. The bottleneck that limits the large-scale application of thermoelectric semiconductor materials is their relatively low conversion efficiency, which can usually be measured by the dimensionless thermoelectric figure of merit zT, zT=S 2 σT / κ, where: T is the absolute temperature, S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, determined by the electronic thermal conductivity κ E a...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 裴艳中李文张馨月
Owner TONGJI UNIV
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