33 results about "GeSbTe" patented technology

The invention relates to a phase change material doped with metallic elements in the microelectronic technical field, and in particular relates to an antimony-rich high-speed phase change material for a phase change memory, a method for preparing the antimony-rich high-speed phase change material and an application of the material. The antimony-rich high-speed phase change material for the phase change memory has a chemical formula of Ax(Sb2Te)(1 minus x), where the x is atomic percent, A is selected from W, Ti, Ta or Mn, and x is larger than zero and less than 0.5. The phase change material provided by the invention is similar to the common GeSbTe materials, and is contributed to realizing high density storage. The phase change material can be performed on reversible phase change under the action that nanosecond-level pulse is driven by external electricity. The phase change speed of a W-Sb-Te phase change material is three times that of the GeSbTe materials, and is contributed to realizing the high density storage.

The present invention discloses a method for manufacturing GeSbTe film with good crystalline and good surface appearance on non-crystal material layer, a method for manufacturing phase change random access memory using the GeSbTe film manufacturing method, and phase change random access memory. The GeSbTe film manufacturing method includes the following operations: to obtain seed crystal layer formed from Ge, Sb, Te, Sb2Te3 or Ge doped Sb, by supplying one or two kinds selected from set composed of Ge precursor, Sb precursor and Te precursor to the non-crystal material layer upper surface; and GeSbTe film is formed by supplying Ge precursor, Sb precursor and Te precursor to the seed crystal layer upper surface.

A new class of phase change materials has been discovered based on compounds of: Ga; lanthanide; and chalcogenide. This includes compounds of Ga, La, and S (GLS) as well as related compounds in which there is substitution of S with O, Se and / or Te. Moreover, La can be substituted with other lanthanide series elements. It has been demonstrated that this class of materials exhibit low energy switching. For example, the GLS material can provide an optical recording medium with erasability 3-5 dB greater than the erasability of GeSbTe (GST) material which is the standard material for phase change memories.

The invention discloses a Ge / Sb superlattice phase change thin film material for high-speed and low power consumption phase change memory, which is characterized in that: the Ge / Sb superlattice phase change thin film material is a multi-layer film structure, composed of The Ge layer and the Sb layer are alternately deposited and composited, and one layer of Ge layer and one layer of Sb layer are used as an alternating cycle, and the Ge layer of the latter alternate cycle is deposited on the Sb layer of the previous alternate cycle. The Ge / Sb-like superlattice phase-change thin film material of the present invention utilizes the clamping effect of the multilayer interface in the superlattice-like structure to reduce the grain size, thereby shortening the crystallization time, inhibiting crystallization, and improving the thermal stability of the material while speeding up the phase transition. The RESET voltage of the Ge / Sb class superlattice phase change film material of the present invention is lower than the RESET voltage of the Ge2Sb2Te5 film under the same voltage pulse more than 30%, illustrating that the GeSb class superlattice phase change film material of the present invention has lower power consumption.

This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

The invention discloses a GeTe / Sb superlattice phase change thin film material used for high-speed phase change memory. A layer of Sb is used as an alternating period, and the GeTe layer of the latter alternating period is deposited on the Sb layer of the previous alternating period. Tests have proved that the time for the sudden change in the reflectivity of the GeTe / Sb class superlattice phase-change thin film material of the present invention is about 5.3ns, and the time for the sudden change in the reflectivity of the single-layer Ge2Sb2Te5 traditional phase-change thin film material is about 39ns; Compared with the traditional single-layer Ge2Sb2Te5 phase-change thin-film material, the phase-change thin-film material of the present invention has a faster phase-change speed, thereby making the phase-change memory prepared with it have a faster operating speed, which is conducive to improving the read and write performance of PCRAM information. speed.

A phase-change material having specific SiOx doping into special Ge-rich GexSbyTez material is described. Integrated circuits using this phase-change material as memory elements in a memory array can pass the solder bonding criteria mentioned above, while exhibiting good set speeds and demonstrating good 10 year data retention characteristics. A memory cell described herein comprises a first electrode and a second electrode; and a memory element in electrical series between the first and second electrode. The memory element comprises a GexSbyTez phase change material with a silicon oxide additive, including a combination of elements having Ge in a range of 28 to 36 at %, Sb in a range of 10 to 20 at %, Te in a range of 25 to 40 at %, Si in a range of 5 to 10 at %, and O in a range of 12 to 23 at %.