The invention discloses a GeSbTe phase change material thin film device with high bonding capacity and low resistance. The device comprises a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer; the lower electrode layer, the first GeSbTe material layer, the molybdenumdisulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially stacked on the substrate layer; the lower electrode layer isof a double-layer composite structure; the lower electrode layer comprises a Cr-Ag alloy plating layer plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy plating layer, wherein M in the Cr-M alloy material layer is selected from Mn, Ta, TaN, Ti, W, Ni, Al, Co or Cu. The improved thin film device based on the GeSbTe phase change material has thecharacteristics of strong thermal bonding capability, good consistency, small internal resistance and long service life.