33 results about "GeSbTe" patented technology

Methods of fabricating a thin film. An example method includes forming a GeSbTe thin film on a surface of a substrate by chemically reacting a first precursor including germanium (Ge), a second precursor including antimony (Sb), and a third precursor including tellurium (Te) in a reaction chamber and processing the surface of the GeSbTe thin film with hydrogen plasma. Another example method includes injecting at least one precursor into a reactor chamber and depositing the at least one precursor onto a substrate within the reactor chamber using a chemical vapor deposition process so as to form the thin film.

A new class of phase change materials has been discovered based on compounds of: Ga; lanthanide; and chalcogenide. This includes compounds of Ga, La, and S (GLS) as well as related compounds in which there is substitution of S with O, Se and/or Te. Moreover, La can be substituted with other lanthanide series elements. It has been demonstrated that this class of materials exhibit low energy switching. For example, the GLS material can provide an optical recording medium with erasability 3-5 dB greater than the erasability of GeSbTe (GST) material which is the standard material for phase change memories.

The invention relates to a thin film structure reducing laser direct-write photoetching point or line width and the preparing method. And the thin film structure comprises inorganic phase-transition thin film layer and buffer layer, where the inorganic phase transition thin film layer is composed of AgInSbTe or GeSbTe or SbTe, the buffer layer is made of high heat conductivity metal or semiconductor. And the thin film structure is made by DC magnetic controlled sputtering process and has advantages of simple structure, process easy to control, low substrate requirements, etc. and the test proves that it can obviously reduce the size of laser direct-write photoetching point and line width.

The invention relates to a novel GeSbTe compound thermoelectric material having a high concentration vacancy and a preparation method thereof, wherein the thermoelectric material has a chemical formula of Ge1-xSb2x/3Te, x is greater than 0 and less than or equal to 0.14; by using the high purity element as raw material, the novel GeSbTe compound thermoelectric material is obtained through grindinginto powder, vacuum hot pressing sintering and slow cooling after vacuum encapsulation, high temperature melting, and annealing heat treatment by dosing according to the stoichiometric ratio in the chemical formula. Compared with the prior art, the introduction of cationic vacancies enables simultaneous regulation of carrier concentration and lattice thermal conductivity. This simple and controllable technique may be widely applied to various thermoelectric materials, especially the materials with a large number of intrinsic defects, which provides a new approach to improving thermoelectric performance.

The invention discloses a thin-film device based on a GeSbTe phase-change material. The thin-film device comprises a substrate layer, a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the lower electrode layer, the first GeSbTe material layer, the molybdenum disulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sedimented and laminated on the substrate layer in sequence; the first GeSbTe material layer is an ion-doped GeSbTe phase-change material layer; and the second GeSbTe material layer is a pure-phase GeSbTe phase-change material. The thin-film device based on the GeSbTe phase-change material disclosed by the invention has the characteristics of high heat stability, good consistency, high phase-change speed and long service life.

In a step of forming an InGeSbTe film which contains GeSbTe made of germanium (Ge), antimony (Sb) and tellurium (Te) as its base material and to which indium (In) is added, an InGeSbTe film is formed by sputtering on a semiconductor substrate while keeping a temperature of the semiconductor substrate between an in-situ crystallization temperature of GeSbTe serving as the base material and an in-situ crystallization temperature of InGeSbTe. As a result, it is possible to suppress the failure that the phase separation occurs in the InGeSbTe film during the following manufacturing process.

The invention relates to a polishing fluid without abrasive for chemical mechanical polishing(CMP)of sulphur system compound phase-changing film material GeSbTe and its application in preparation of electric applicance phase-changing memorizer. The CMP polishing fluid without abrasive is comprised of oxidant, sequestrant, pH regulator resist, surface active agent, defoamer and bactericide and solvent,it has less hurt,convenient cleaning,no corrosion to equipment and no pollution to the environment,mainly applied in preparation of CMP of the key material (GexSbyTe)for phase-chaning memorizer. Using the method above to clear away too much phase-changing film material (GexSbyTe)(x and y are not 0 at the same time )for preparation of phase-changing memorizer of electric appliance is simple and convenient.

The invention provides a method for achieving magneto-optical coupling composite storage by using ultraviolet laser to act on a magnetic material/GeSbTe/substrate heterostructure, and belongs to the technical field of composite storage devices. The magnetic material/GeSbTe/substrate heterostructure is prepared by using a magnetron sputtering coating instrument, then the heterostructure is irradiated by the ultraviolet laser with a short wavelength, the input energy of the laser is controlled to make a GeSbTe thin film undergo phase transition (crystallization or amorphization) and a magnetic material thin film not undergo phase transition, the volume effect, produced due to the phase transition, of the GeSbTe thin film induces the magnetic domain of the magnetic material thin film to produce deflection which can be effectively controlled, meanwhile, the phase transition and the magnetic domain deflection are reversible, therefore, the laser can act on and control the GeSbTe thin film and the magnetic material thin film at the same time, and the coupling composite storage of magnetic storage and phase-transition optical storage is expected to be achieved.

The invention discloses a high-performance GeSbTe-based thermoelectric material preparation method. The method comprises the following steps: 1) with Ge, Sb and Te elements as raw materials, each raw material is weighed according to a stoichiometric ratio, melting treatment is carried out, furnace cooling to the room temperature is carried out, and an ignot body product is obtained; 2) the obtained ignot body product is subjected to induction melting and melt spinning to obtain a thin strip product; 3) the thin strip product obtained in the step 2) is grinded, spark plasma sintering is then carried out, and the GeSbTe-based thermoelectric material is obtained. Through carrying out Sb doping on GeTe, the carrier concentration of the GeSbTe-based thermoelectric material is effectively reduced, the melt sintering method and the melt spinning technology are combined, on the basis of ensuring the GeSbTe-based system structure and the component information, microstructure regulation is carried out further through the melt spinning technology, and the GeSbTe-based thermoelectric material with a fine structure, stable component and excellent thermoelectric material can be prepared.

A semiconductor device having a phase-change memory cell comprises an interlayer dielectric film formed of, for example, SiOF formed on a select transistor formed on a main surface of a semiconductor substrate, a chalcogenide material layer formed of, for example, GeSbTe extending on the interlayer dielectric film, and a top electrode formed on the chalcogenide material layer. A fluorine concentration in an interface between the interlayer dielectric film and the chalcogenide material layer is higher than a fluorine concentration in an interface between the chalcogenide material layer and the top electrode.

The present invention relates to a metal element doped phase-change material in the field of micro-electronics technologies, specifically to an antimony-rich high-speed phase-change material used in a phase-change memory (PCRAM), a preparing method and an application thereof. The antimony-rich high-speed phase-change material used in a PCRAM has a chemical formula being A_x(Sb₂Te)_1−x, x is an atom percent, where A is selected from W, Ti, Ta, and Mn, and 0<x<0.5 The phase-change material provided in the present invention is similar to a usual GeSbTe material, so as to be propitious to implement high-density storage. The material may perform reversible phase-change under an effect of an externally electrically driven nano-second (ns) pulse. A phase-change speed of the W—Sb—Te is 3 times of the GeSbTe material, so as to be propitious to implement the high-speed PCRAM.

The invention provides a technology for improving the GeSbTe phase change property and a thin film preparation method. A compound is formed by adding TiN into a Ge-Sb-Te phase change material, and the chemical formula of the compound is (TiN)1-x-( Ge-Sb-Te)X (wherein X is greater than 0.1 and smaller than 1), so that the thermal property and the electrical property of the Ge-Sb-Te phase change material can be improved. The crystallizing temperature (-160 DEG C), the thermal stability and the data retention capacity of the Ge-Sb-Te phase change material are not ideal, so that the application of Ge-Sb-Te in a phase change storage material is always restricted. A TiN material is extremely high in thermal stability; due to combination of two alloy materials, a novel material (TiN)1-x-( Ge-Sb-Te)X is obtained, and the novel (TiN)1-x-( Ge-Sb-Te)X is higher in electrical property and higher in thermal stability and data retention capacity compared with the Ge-Sb-Te phase change material.

The invention discloses a nano-particle composite phase change material and a preparation method thereof. The material sequentially comprises a substrate layer, a second phase layer, a phase change layer and a protection layer from bottom to top, wherein the substrate layer is a Si sheet or K9 glass sheet with thickness of 3.0 mm; the second phase layer is a Si or Ge or SbTe or Sb film with thickness of 10-100 nm; the phase change layer is a GeSbTe or AgInSbTe phase change material film with thickness of 10-100 nm; the protection layer is a SiN or ZnS-SiO2 film with thickness of 10-20 nm; and the second phase layer and the phase change layer are formed into a composite phase change layer under the effect of laser irradiation. The material disclosed by the invention has relatively high crystallization speed.

A new class of phase change materials has been discovered based on compounds of: Ga; lanthanide; and chalcogenide. This includes compounds of Ga, La, and S (GLS) as well as related compounds in which there is substitution of S with O, Se and/or Te. Moreover, La can be substituted with other lanthanide series elements. It has been demonstrated that this class of materials exhibit low energy switching. For example, the GLS material can provide an optical recording medium with erasability 3-5 dB greater than the erasability of GeSbTe (GST) material which is the standard material for phase change memories.

The invention provides a silicon-doped bismuth telluride-based memory material for a phase-change memory and a preparation method of the silicon-doped bismuth telluride-based memory material. A chemical formula of the silicon-doped bismuth telluride-based material is BixTeySi100 minus (x plus y), wherein the x and the y satisfy the following conditions that the x is more than 0 and is less than or equal to 40, the y is more than 0 and is less than or equal to 60, and the x plus the y is more than or equal to 90 and is less than 100. Under the situation that an electrical impulse signal is applied, the silicon-doped bismuth telluride-based material has the reversible characteristic between a high-impedance state and a low-impedance state and can be used for the phase-change memory. Compared with the traditional GeTe, SiSbTe, GeSbTe and other phase-change thin-film materials for the phase-change memory, the silicon-doped bismuth telluride-based material has simple component, quicker phase-change speed, lower energy required for phase change and good compatibility with a complementary metal oxide semiconductor (CMOS) device manufacturing process, and is an excellent new memory material for the phase-change memory.

The invention relates to a chemico-mechanical polishing solution for a phase-change material GeSbTe. The chemico-mechanical polishing solution for the phase-change material GeSbTe is prepared from anammonia type nanosilicon dioxide grinding material, an oxidizing agent, a water-soluble polymer surface protecting agent, an amino acid organic additive and a water-based medium. The chemico-mechanical polishing solution provided by the invention is applicable to a chemico-mechanical polishing process of the phase-change material GeSbTe, is high in polishing rate reaching to 200nm/min and high inGeSBTe/SiO2 polishing selection ratio reaching to 4000:1, and has no polishing etch defect.

The invention discloses a GeSbTe phase change material thin film device with high bonding capacity and low resistance. The device comprises a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer; the lower electrode layer, the first GeSbTe material layer, the molybdenumdisulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially stacked on the substrate layer; the lower electrode layer isof a double-layer composite structure; the lower electrode layer comprises a Cr-Ag alloy plating layer plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy plating layer, wherein M in the Cr-M alloy material layer is selected from Mn, Ta, TaN, Ti, W, Ni, Al, Co or Cu. The improved thin film device based on the GeSbTe phase change material has thecharacteristics of strong thermal bonding capability, good consistency, small internal resistance and long service life.

The invention provides a method for preparing GeSbTe alloy powder. Sb, Te and an appropriate amount of the first dopant are mixed, and the vacuum melting treatment is carried out at 640-690°C, which reduces the sealing melting temperature and prevents the tellurium component Composition deviation caused by volatilization is safer for dealing with high vapor pressure element tellurium, low-cost glass tubes can be used, single-tube synthesis capacity is increased, and the difficulty of vacuum sealing is reduced. Then, the SbTe alloy after vacuum smelting treatment, Ge and an appropriate amount of the second dopant are mixed, and the powder synthesis is carried out under the condition of protective gas. The powder synthesis process has a large processing capacity, and the component distribution is uniform without segregation. The protective atmosphere of hydrogen reduces the oxidized material and reduces the oxygen content of the alloy powder. The composition of the GeSbTe alloy powder obtained by the preparation method disclosed by the invention is uniform, the content of non-proportioned impurities is low, and the content of oxygen is low.