High-performance GeSbTe-based thermoelectric material preparation method

A thermoelectric material and high-performance technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric device junction lead-out materials, etc., can solve the problems of microstructure disorder, limit research and application, and damage to human body and environment, so as to improve Seebeck coefficient, reducing carrier concentration, and improving thermoelectric performance

Active Publication Date: 2017-10-24
WUHAN UNIV OF TECH
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

First of all, from the perspective of composition, Pb-containing samples are toxic and have varying degrees of damage to the human body and the environment; secondly, the samples prepared only by fusion bonding and sintering have disordered microstructure, uneven composition, po

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-performance GeSbTe-based thermoelectric material preparation method
  • High-performance GeSbTe-based thermoelectric material preparation method
  • High-performance GeSbTe-based thermoelectric material preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A method for preparing a high-performance GeSbTe-based thermoelectric material, comprising the steps of:

[0035] 1) Using Ge, Sb and Te simple substances as raw materials, according to Ge 0.93 Sb 0.06 The stoichiometric ratio of Te weighs each raw material, puts the weighed raw material into a quartz test tube and vacuum seals it, then puts the quartz tube into a melting furnace and heats it to 1100°C for 24 hours until the reaction is complete, and finally cools to room temperature with the furnace. Ingot product;

[0036] 2) Place the ingot product obtained in step 1) in a quartz tube with a nozzle diameter of 0.5mm, place the quartz tube above the radio frequency copper roller for induction melting, and spray the molten alloy obtained by smelting on a 10m On the copper roller that rotates at / s, a thin strip product is obtained;

[0037] 3) Grind the strip product obtained in step 2), and then perform PAS sintering at a temperature of 500°C and a pressure of 50 M...

Embodiment 2

[0040] A method for preparing a high-performance GeSbTe-based thermoelectric material, comprising the steps of:

[0041] 1) Using Ge, Sb and Te simple substances as raw materials, according to Ge 0.98 Sb 0.01 The stoichiometric ratio of Te weighs each raw material, puts the weighed raw material into a quartz test tube and vacuum seals it, then puts the quartz tube into a melting furnace and heats it to 1100°C for 24 hours until the reaction is complete, and finally cools to room temperature with the furnace. Ingot product;

[0042] 2) Place the ingot product obtained in step 1) in a quartz tube with a nozzle of 0.5mm in diameter, and place the quartz tube above the radio frequency copper roller for induction melting. On the copper roller that rotates at / s, the thin strip product is obtained;

[0043] 3) Grinding the ribbon product obtained in step 2), and then performing PAS sintering at a temperature of 480° C. and a pressure of 52 MPa for 5 minutes to obtain a dense bloc...

Embodiment 3

[0045] A method for preparing a high-performance GeSbTe-based thermoelectric material, comprising the steps of:

[0046] 1) Using Ge, Sb and Te simple substances as raw materials, according to Ge 0.89 Sb 0.1 The stoichiometric ratio of Te weighs each raw material, puts the weighed raw material into a quartz test tube and vacuum seals it, then puts the quartz tube into a melting furnace and heats it to 1100°C for 24 hours until the reaction is complete, and finally cools to room temperature with the furnace. Ingot product;

[0047] 2) Place the ingot product obtained in step 1) in a quartz tube with a nozzle diameter of 0.5mm, place the quartz tube above the radio frequency copper roller for induction melting, and spray the molten alloy obtained by smelting on a 10m On the copper roller that rotates at / s, a thin strip product is obtained;

[0048] 3) Grinding the ribbon product obtained in step 2), and then performing PAS sintering at a temperature of 520° C. and a pressure...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-performance GeSbTe-based thermoelectric material preparation method. The method comprises the following steps: 1) with Ge, Sb and Te elements as raw materials, each raw material is weighed according to a stoichiometric ratio, melting treatment is carried out, furnace cooling to the room temperature is carried out, and an ignot body product is obtained; 2) the obtained ignot body product is subjected to induction melting and melt spinning to obtain a thin strip product; 3) the thin strip product obtained in the step 2) is grinded, spark plasma sintering is then carried out, and the GeSbTe-based thermoelectric material is obtained. Through carrying out Sb doping on GeTe, the carrier concentration of the GeSbTe-based thermoelectric material is effectively reduced, the melt sintering method and the melt spinning technology are combined, on the basis of ensuring the GeSbTe-based system structure and the component information, microstructure regulation is carried out further through the melt spinning technology, and the GeSbTe-based thermoelectric material with a fine structure, stable component and excellent thermoelectric material can be prepared.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric material preparation, and in particular relates to a preparation method of a high-performance GeSbTe-based thermoelectric material. Background technique [0002] Since the discovery of the thermoelectric effect 200 years ago, researchers have carried out a lot of research aimed at improving the thermoelectric figure of merit of existing thermoelectric material systems or expanding new thermoelectric material systems, and have achieved fruitful progress. Fossil fuels not only have limited reserves, but also cause irreversible damage to the environment. Therefore, the research on thermoelectric materials actively responds to the current global call for the development of alternative energy sources from fossil fuels. [0003] GeTe has a high ZT value and is an important medium-high temperature thermoelectric material. In recent years, the research on GeTe-based thermoelectric materials mainly...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L35/34H01L35/16
CPCH10N10/852H10N10/01
Inventor 唐新峰齐尼玛纳·艾瑞思邓日桂苏贤礼鄢永高
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products