High-gain solar blind ultraviolet light detector based on (GaY)2O3 amorphous film and preparation method of high-gain solar blind ultraviolet light detector

An amorphous thin-film, high-gain technology, applied in photovoltaic power generation, semiconductor devices, final product manufacturing, etc., can solve the problems of crystal quality degradation, device performance and stability, etc., and achieve improved response, reduced dark current, relaxation The effect of delay time reduction
CN110323291AActive Publication Date: 2019-10-11HUBEI UNIV +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HUBEI UNIV
Publication Date
2019-10-11

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Abstract

The invention discloses a high-gain solar blind ultraviolet light detector based on a (GaY)2O3 amorphous film and a preparation method of the high-gain solar blind ultraviolet light detector. The detector sequentially comprises a c-plane sapphire, an active layer and a pair of parallel electrodes from bottom to top, wherein the active layer is the amorphous (GaY)2O3 film. According to the invention, Y3+ ions are used for partially replacing Ga3+ ions in Ga2O3, so that the band gap of Ga2O3 is increased, and the thin film is converted into amorphous from single crystal. The amorphous (GaY)2O3 film with a higher band gap can effectively reduce the dark current of the device, and enables the cut-off wavelength to be blue-shifted to be within 280nm. Meanwhile, the amorphous (GaY)2O3 film has higher defect concentration, and the defects not only can improve the gain, but also can be used as a recombination center to promote carrier recombination, so that compared with a pure Ga2O3 device, an amorphous (GaY)2O3 device has the advantages that the responsivity is obviously improved, the relaxation time is obviously shortened, and the detection capability on deep ultraviolet light is greatly improved.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor detectors, and in particular relates to a solar-blind ultraviolet light detector with an MSM structure. More specifically, the invention relates to a (GaY) 2 o 3 High-gain solar-blind ultraviolet light detector of amorphous film and its preparation method. Background technique

[0002] Since the deep ultraviolet part (200-280nm) in sunlight will be strongly absorbed by the ozone layer before reaching the earth's surface, the solar-blind ultraviolet photodetector has the characteristics of strong anti-interference ability and high sensitivity when working on the earth's surface. It has very important applications in military and people's livelihood fields such as missile early warning, ultraviolet communication, fire prevention and control, and environmental monitoring. The traditional vacuum ultraviolet photomultiplier tube detector has high power consumption and high price. The sun-blind ...

Claims

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