33results about How to "Increase defect concentration" patented technology

The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

The invention provides a resistive variable material and a resistive variable memory based on a silicon oxycarbide thin film. A silicon oxycarbide thin film resistive material, its molecular formula is SiCxOy, where x=1.21~0.21, y=1.45~2.01, and x and y are negatively correlated; the film thickness is below 50nm. A resistive variable memory, comprising a top electrode, a resistive medium layer, a substrate and a back electrode, characterized in that the resistive medium layer is the aforementioned silicon oxycarbide film. Materials such as Ag and Al can be used for the top electrode. In the present invention, materials compatible with the COMS process are selected to prepare the resistive variable memory. The preparation process mainly adopts physical deposition thin film equipment without high-temperature process, thereby reducing energy consumption. By controlling the gas ratio, silicon oxycarbide films with different defect concentrations can be obtained. For the SiC0.21O2.01 material, its on-off ratio reaches 500, which can fully meet the actual needs (greater than 10). At the same time, the resistive memory based on the silicon oxycarbide material has a self-rectification effect, which is helpful for simplifying the design of the external circuit. Significance.

The invention discloses a method for preparing a storage unit of a resistance random access memory. Step 1, forming a conductive film on the surface of a substrate as a first electrode; Step 2, preparing an argon plasma bombardment treatment on the surface of the first electrode obtained in step 1 The ZnO thin film is used as the intermediate layer; step 3, the conductive film is prepared on the surface of the intermediate layer obtained in step 2 as the second electrode; step 4, an isolated device is prepared on the basis of the structure obtained in step 3, and the resistive random access memory is obtained storage unit. The invention provides a method for preparing a storage unit of a resistive random access memory, which performs argon plasma bombardment treatment on a ZnO thin film as an intermediate medium layer, thereby greatly improving the flatness of the surface of the ZnO thin film; ZnO treated with the argon plasma bombardment The memory prepared by the thin film as the intermediate layer initially exhibits a low-resistance state, and the erasing and writing of all devices does not require an electrical formation process, and the erasing and writing voltage is relatively small.

The invention discloses a high-gain solar blind ultraviolet light detector based on a (GaY)2O3 amorphous film and a preparation method of the high-gain solar blind ultraviolet light detector. The detector sequentially comprises a c-plane sapphire, an active layer and a pair of parallel electrodes from bottom to top, wherein the active layer is the amorphous (GaY)2O3 film. According to the invention, Y3+ ions are used for partially replacing Ga3+ ions in Ga2O3, so that the band gap of Ga2O3 is increased, and the thin film is converted into amorphous from single crystal. The amorphous (GaY)2O3 film with a higher band gap can effectively reduce the dark current of the device, and enables the cut-off wavelength to be blue-shifted to be within 280nm. Meanwhile, the amorphous (GaY)2O3 film has higher defect concentration, and the defects not only can improve the gain, but also can be used as a recombination center to promote carrier recombination, so that compared with a pure Ga2O3 device, an amorphous (GaY)2O3 device has the advantages that the responsivity is obviously improved, the relaxation time is obviously shortened, and the detection capability on deep ultraviolet light is greatly improved.