33results about How to "Increase defect concentration" patented technology

A piezoelectric component has at least one piezoelectric ceramic layer and at least one electrode adjacent the piezoelectric ceramic layer. The piezoelectric ceramic layer has a piezoelectric ceramic material of the general formula Pb1-x-y-[(2a-b) / 2]-p / 2V[(2a-b) / 2-p / 2]″CupBaxSry[(TizZr1-z)1-a-bWaREb]O3, where 0≦x≦0.035, 0≦y≦0.025, 0.42≦z≦0.5, 0.0045≦a≦0.009, 0.009≦b≦0.011, 2a>b, p≦2a−b, RE is a rare earth metal, and V″ is a Pb vacancy.

The invention provides a preparation method of a high-density expanded graphite and nano-silicon composite material. The preparation method comprises the following steps: step S1, oxidizing graphite to manufacture graphite oxide; step S2, carrying out heat treatment on the graphite oxide to manufacture expanded graphite; step S3, mixing the expanded graphite with nano-silicon and a carbon source and carrying out ball-milling to obtain a high-density expanded graphite and nano-silicon composite material precursor comprising a plurality of graphite layers, the carbon source and the nano-silicon filled among the graphite layers; step S4, carrying out heat treatment on the high-density expanded graphite and nano-silicon composite material precursor so that the carbon source is converted into amorphous carbon; and step S5, depositing carbon or doped carbon on the surface of the high-density expanded graphite and nano-silicon composite material precursor after the heat treatment. Moreover, the invention also provides the high-density expanded graphite and nano-silicon composite material, an electrode plate applying the high-density expanded graphite and nano-silicon composite material, and a lithium ion battery applying the electrode plate.

The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

The invention relates to synthetic calcium magnesite and a preparation method thereof. The preparation method comprises the steps of firstly carrying out ball milling on 25-30wt% of calcium hydroxide and 70-75wt% of magnesium hydroxide to reach the grain size within 30 mu m, heating the ball-milled mixture in a muffle furnace to 700-900 DEG C, and insulating heat for 0.25-0.5 hour; adding water the amount of which is 20-25wt% of the mixture to the calcined mixture, and digesting for 1-2 hours; and then adding an additive the amount of which is 1-3wt% of the digested mixture to the digested mixture, stirring, carrying out mechanical press shaping by a semi-dry method, naturally drying for 12-15 hours, baking at the temperature of 100-120 DEG C for 12-15 hours, finally firing in a high-temperature furnace at the temperature of 1600-1750 DEG C, insulating heat for 3-5 hours and crushing to obtain the synthetic calcium magnesite. The preparation method provided by the invention has the advantages of simple process and no need for special synthesis equipment and treatment technology. The synthesized calcium magnesite has the characteristics of high purity, wide application range, good sintering performance, good hydration resistance, and no influence on high-temperature use performance.

The invention provides a resistive variable material and a resistive variable memory based on a silicon oxycarbide thin film. A silicon oxycarbide thin film resistive material, its molecular formula is SiCxOy, where x=1.21~0.21, y=1.45~2.01, and x and y are negatively correlated; the film thickness is below 50nm. A resistive variable memory, comprising a top electrode, a resistive medium layer, a substrate and a back electrode, characterized in that the resistive medium layer is the aforementioned silicon oxycarbide film. Materials such as Ag and Al can be used for the top electrode. In the present invention, materials compatible with the COMS process are selected to prepare the resistive variable memory. The preparation process mainly adopts physical deposition thin film equipment without high-temperature process, thereby reducing energy consumption. By controlling the gas ratio, silicon oxycarbide films with different defect concentrations can be obtained. For the SiC0.21O2.01 material, its on-off ratio reaches 500, which can fully meet the actual needs (greater than 10). At the same time, the resistive memory based on the silicon oxycarbide material has a self-rectification effect, which is helpful for simplifying the design of the external circuit. Significance.

The invention discloses a method for preparing a storage unit of a resistance random access memory. Step 1, forming a conductive film on the surface of a substrate as a first electrode; Step 2, preparing an argon plasma bombardment treatment on the surface of the first electrode obtained in step 1 The ZnO thin film is used as the intermediate layer; step 3, the conductive film is prepared on the surface of the intermediate layer obtained in step 2 as the second electrode; step 4, an isolated device is prepared on the basis of the structure obtained in step 3, and the resistive random access memory is obtained storage unit. The invention provides a method for preparing a storage unit of a resistive random access memory, which performs argon plasma bombardment treatment on a ZnO thin film as an intermediate medium layer, thereby greatly improving the flatness of the surface of the ZnO thin film; ZnO treated with the argon plasma bombardment The memory prepared by the thin film as the intermediate layer initially exhibits a low-resistance state, and the erasing and writing of all devices does not require an electrical formation process, and the erasing and writing voltage is relatively small.

Take La 2 TiO 5 As a single precursor, thermal ammonolytic nitridation was performed in a high temperature ammonia atmosphere to prepare LaTiO with absorption band edges around 600 nm without defects detectable by EPR and UV‑Vis‑NIR spectroscopy 2 N semiconductor, annealed in inert atmosphere to obtain LaTiO with adjustable defect concentration 2 N, increasing LaTiO 2 N photocatalytic activity. or with La 2 Ti 2 O 7 As a single precursor, thermal ammonolysis nitridation under high temperature ammonia atmosphere to prepare LaTiO with defects 2 N semiconductor, inert atmosphere annealing treatment further increases defect concentration and improves LaTiO 2 N photocatalytic activity. In this method, La 2 TiO 5 As a precursor, it can effectively inhibit the reduction of Ti in the high-temperature nitridation process, inhibit the formation of low-valent Ti defects or impurity phases, and provide a comprehensive basis for the regulation of defect concentration; simple inert atmosphere annealing is used to form anion vacancy defects, and by changing the annealing process, anion vacancy defects are formed. The parameters can easily adjust the defect concentration to realize the optimization of photocatalytic activity.

The invention discloses a method for preparing conductive powder by recoating aluminum-doped nano zinc oxide with aluminum. The method comprises the following steps: firstly, preparing aluminum-doped zinc oxide powder; secondly, coating the aluminum-doped zinc oxide powder with an aluminum-containing film; finally, mixing the coated aluminum-doped zinc oxide powder with zinc powder, grinding, and calcining in an inert gas atmosphere to obtain the conductive powder. The method has the advantages that the zinc oxide conductive powder is prepared through primary aluminum doping and secondary aluminum coating, the primary aluminum doping improves the whiteness and the water dispersion of the nano zinc oxide and reduces the particle size of the nano zinc oxide, and the secondary aluminum coating further increases the defect concentration of zinc oxide crystals and improves the conductivity of the nano zinc oxide; the aluminum-doped zinc oxide is coated with a thin oxide film, so that zinc ions in water are unlikely to dissolve out, and the ball milling process of the zinc powder and the aluminum-doped zinc oxide is facilitated; the prepared conductive powder is high in conductive ability, small in particle size, light in color, wide in sources of raw materials, low in production cost, simple in preparation method, high in security, relatively light in environmental pollution, and suitable for industrial mass production.

The invention discloses a high-gain solar blind ultraviolet light detector based on a (GaY)2O3 amorphous film and a preparation method of the high-gain solar blind ultraviolet light detector. The detector sequentially comprises a c-plane sapphire, an active layer and a pair of parallel electrodes from bottom to top, wherein the active layer is the amorphous (GaY)2O3 film. According to the invention, Y3+ ions are used for partially replacing Ga3+ ions in Ga2O3, so that the band gap of Ga2O3 is increased, and the thin film is converted into amorphous from single crystal. The amorphous (GaY)2O3 film with a higher band gap can effectively reduce the dark current of the device, and enables the cut-off wavelength to be blue-shifted to be within 280nm. Meanwhile, the amorphous (GaY)2O3 film has higher defect concentration, and the defects not only can improve the gain, but also can be used as a recombination center to promote carrier recombination, so that compared with a pure Ga2O3 device, an amorphous (GaY)2O3 device has the advantages that the responsivity is obviously improved, the relaxation time is obviously shortened, and the detection capability on deep ultraviolet light is greatly improved.