55results about How to "Good resistive properties" patented technology

The invention belongs to the technical field of non-volatile resistive memory devices, in particular to a polycrystalline tin dioxide resistive thin film and its preparation method and application. The invention uses glass as a substrate, uses a pure metal tin target material, and utilizes a DC magnetron sputtering technology under a certain temperature condition to prepare a polycrystalline tin dioxide semiconductor resistive variable film. Ni top electrode and platinum titanium bottom electrode were prepared by DC magnetron sputtering to test the resistive switching properties of polycrystalline tin dioxide resistive switching films. The ratio of the high and low resistance states of the polycrystalline tin dioxide resistive film is greater than 100, the erasable times of DC scanning are greater than 250 times, and the high and low resistance state maintenance time is greater than 106 seconds. The polycrystalline tin dioxide resistive switch film can be used as a resistive switch material of a resistive switchable memory. The invention also relates to a resistive variable memory using polycrystalline tin dioxide film as a resistive variable material. The invention has good application prospect in the field of non-volatile storage.

The invention belongs to the technical field of semiconductors and particularly relates to a ZnO/NiO heterostructure orderly multi-hole thin film and a manufacturing method thereof. A new option is provided for semiconductor materials. According to the technical scheme, the ZnO/NiO heterostructure orderly multi-hole thin film comprises a conducting substrate and a heterostructure growing on the conducting substrate, and the heterostructure is formed by a p type NiO orderly multi-hole thin film and an n type ZnO orderly multi-hole thin film which grows in sequence from bottom to top. The invention further provides a manufacturing method of the ZnO/NiO heterostructure orderly multi-hole thin film. The ZnO/NiO heterostructure orderly multi-hole thin film can be widely used in the fields such as an ultraviolet detector, a light-emitting diode and a resistance random access memory.

The invention discloses a preparing method for an inorganic perovskite film. The method includes the following steps: spraying perovskite precursor solution CsPbBr3 on the surface of a clean bottom electrode under 80-100 DEG C, spin-coating and adding a poor solvent on the bottom electrode with deposits of the perovskite CsPbBr3, performing annealing processing under 250-300 DEG C, and obtaining the inorganic perovskite film. The poor solvent is added in the spin coating process of the CsPbBr3 perovskite film prepared by the spraying method, by changing the ratio relation between butyric acidand toluene of the poor solvent, the crystal grain morphology of the CsPbBr3 film is controlled, the stability of the CsPbBr3 film is improved, the CsPbBr3 film has excellent resistive switching property, and the film is applied widely in the field of the memristor.

The invention discloses a resistive random access memory based on a polymer/metal ion composite system, and a preparation method for the resistive random access memory. The resistive random access memory comprises an insulating substrate, and a bottom electrode, a top electrode and a polyimide/metal ion composite film which are arranged on the insulating substrate; and the polyimide/metal ion composite film is positioned between the bottom electrode and the top electrode. The resistive random access memory is high in repeatability, response speed, reliability, simple in structure and low in manufacturing cost, is used for the field of highly integrated high-capacity multi-value memories, and has high application value.

The present invention is the aqueous floor polishing composition which contains the polyoxyalkylene diester compound represented by the following general formula (1) and does not contain the phosphorus-containing plasticizer. R¹ and R² represent each independently alkyl groups having 1 to 24 carbon atoms, m represents an integer from 2 to 4, n represents a number from 2 to 40.

The aqueous floor polishing composition of the present invention does not contain the phosphorus-containing plasticizer. Therefore, it does not affect the environment negatively, in spite of having excellent leveling properties, lustering properties and heel mark resistance properties.

A flux-cored wire according to an aspect of the present invention includes: a steel sheath; and a flux filling the inside of the steel sheath, in which the flux contains 0.11% or more in total of a fluoride in terms of F-equivalent value, 4.30% to 7.50% of a Ti oxide in terms of TiO₂ equivalent, 0.30% to 2.40% in total of an oxide in terms of mass %, and 0% to 0.60% in total of a carbonate in terms of mass %, the amount of a Ca oxide in terms of CaO is less than 0.20% in terms of mass %, the amount of CaF₂ is less than 0.50%, a chemical composition of the flux-cored wire is within a predetermined range, a Z value is 2.00% or less, a V value is 5.0 to 27.0, and Ceq is 0.30% to 1.00% or less.

The invention belongs to the field of flexible pressure sensors and particularly relates to a flexible wearable mechanical sensor and a manufacturing method thereof. A carbon nanotube/graphene composite film material for study on a supercapacitor and a battery is used for a stress sensor. Graphene fragments in the carbon nanotube/graphene composite film material are used for forming isolated island conductive regions, carbon nanotubes become bridges connecting the island graphene blocks, and an island bridge structure formed by the two forms a conductive channel between electrodes. Due to thestructural feature, the resistance model of the whole device changes a lot, and good resistance change feature is expressed. The strain coefficient of the flexible wearable mechanical sensor can reachas high as 190, the sensitivity is higher, a high measurable range is reached, a tensile range of 150% can be reached maximally, the device repeatability is strong, the process is simple, and the cost is low.

The invention discloses an organic electrode resistive random access memory. A PCBM organic electrode dielectric layer, a Zr<0.5>Hf<0.5>O<2> resistive conversion layer and an Ag electrode layer are formed on a substrate in turn. A preparation method of the resistive random access memory is also disclosed, comprising the following steps: cleaning and drying a substrate; spin-coating the substrate with PCBM solution and vacuum-drying the PCBM solution to form a PCBM organic electrode dielectric layer; growing a Zr<0.5>Hf<0.5>O<2> resistive conversion layer on the PCBM organic electrode dielectric layer through magnetron sputtering; and growing an Ag electrode layer on the Zr<0.5>Hf<0.5>O<2> resistive conversion layer. As a PCBM film is used as the organic electrode dielectric layer of the resistive random access memory, the resistive random access memory is different from a traditional memory prepared from oxide in that the resistive random access memory has a unique structure and good performance. Thus, the resistive random access memory has more stable storage performance, strong durability, and a wider application prospect.

The invention discloses an all-carbon memristor comprising a substrate, a graphene bottom electrode layer, a graphene oxide intermediate dielectric layer and a graphene top electrode layer that are arranged successively from bottom to top. In addition the invention also discloses a preparation method. The method comprises: step one, preparing a graphene bottom electrode layer on a substrate by using a suction filtration method; step two, transferring a graphene oxide intermediate dielectric layer on the graphene bottom electrode layer by using a suction filtration method; and step three, transferring the graphene top electrode layer on the graphene oxide intermediate medium layer by using a suction filtration method. According to the invention, the all-carbon memristor is prepared by usingthe low temperature solution method, so that the cost of preparing the memristor is reduced substantially. The process is simple. The all-carbon memristor and the preparation method thereof are suitable for the large-scale industrial production.

The invention provides a copper metaaluminate memristor based on a flexible substrate. The memristor is sequentially provided with an upper electrode, a resistive layer, a lower electrode and a vertical four-layer structure of the flexible substrate from top to bottom. An upper electrode of the memristor is a copper film or a silver film; a resistive layer of the memristor is a copper metaaluminate film; and the lower electrode is an indium tin oxide transparent conductive film. The flexible substrate is polyethylene naphthalate or polyethylene glycol terephthalate mateiral. According to the flexible memristor based on the copper metaaluminate thin film, the preparation process is simple, the cost is low, and good resistance change characteristics can be obtained on the polymer flexible substrate. According to the memristor, the material system of the resistive layer of the memristor is widened, and the memristor is expected to be applied to the fields of flexible devices and wearableelectronic devices.

A fiber laser system enables an improved reflection resistance property. The fiber laser system includes fiber lasers (2 through 4) each having a laser medium which is an optical fiber made from silica glass. A difference between respective lasing wavelengths of any given two of the fiber lasers is greater than a wavelength equivalent to a half width at half maximum of a peak deriving from a vibration mode of a planar four-membered ring of a Si—O network structure of silica glass.

The invention discloses a preparation method of a single-layer nano-film memristor using an LTCC green tape as a substrate. According to the invention, cavities and ionized oxygen ions generated by the single-layer nano-film memristor under a bias voltage are utilized, the change principle of device resistance is realized dependent on the changes of the generation numbers of the cavities and the ionized oxygen ions, and from technology simplification and resistive film raw material formula improvement, the preparation method is characterized in that a pre-sintering step of the resistive film ceramic material is omitted, a ceramic raw material lower in sintering temperature is selected, and a lower sintering temperature is adopted; B site substitution is carried out by replacing Ti4+ with an X2+ part, so that the asymmetry of the molecule structure and the number of internal cavities of the resistive film are increased; in addition, a series of technical means is adopted, for example, film plating is carried out on the LTCC green tape to form a flexible lower electrode, the preparation technology is simplified, the production efficiency is improved, the production energy consumption and the manufacturing cost are lowered, and the memristive performance of the memristor is substantially improved.

The invention discloses a preparation method of a carbon/nickel oxide resistive memory thin film. The method includes the following steps that: a nickel oxide thin film is prepared; and a carbon film is prepared on the nickel oxide thin film, so that a carbon/nickel oxide composite thin film is prepared, top electrode preparation is performed on the carbon/nickel oxide composite thin film through using a sputtering apparatus, and the carbon/nickel oxide resistive memory thin film is obtained. According to the method of the invention, the carbon film and the nickel oxide thin film are composited, and therefore, compared with other materials having resistance variation characteristics, the carbon/nickel oxide composite thin film prepared by the preparation method of the invention has a smooth surface, and the preparation method has the advantages of low preparation cost, simple techniques and easiness in control, and can improve the preparation efficiency of the composite thin film, and the resistance variation performance of the carbon/nickel oxide composite thin film is significantly better than that of a single nickel oxide thin film.

The invention discloses an RRAM device based on graphene oxide and a preparation method of the RRAM device, and belongs to the technical field of electronic devices. The RRAM device based on the graphene oxide comprises a conductive substrate, a dielectric layer and a top electrode layer, which are stacked from bottom to top. The top electrode layer comprises a plurality of top electrodes arrangedon the dielectric layer in an array mode, and a protective layer is arranged on the surfaces, away from the dielectric layer, of the top electrodes. The dielectric layer is manufactured through a solution method, the low-cost preparation of the RRAM device is realized, the equipment and raw material investment is less, and the large-scale industrial application can be realized.

The invention relates to the technical field of electronic equipment and particularly relates to a perovskite oxide thin-film device, a preparation method thereof and application thereof. The perovskite oxide thin film device comprises a base layer, a bottom electrode layer, a PbZrO3 layer, a first top electrode and a second top electrode. The bottom electrode layer is disposed on a surface of thebase layer. The PbZrO3 layer is disposed on a surface of a side of the bottom electrode layer facing away from the base layer. The first top electrode is disposed on a surface of a side of the PbZrO3layer facing away from the bottom electrode layer. The second top electrode is disposed on a surface of a side of the bottom electrode layer facing away from the base layer. The purpose of the invention is to provide the perovskite oxide thin-film device with a high resistance switching ratio to improve the application range thereof.

A memristor switching device based on a-TSC: O ceramic film and a preparation method thereof belong to the technical field of photoelectric devices. On the basis of the traditional memristor switchingdevice structure, the invention innovatively proposes a dielectric layer structure of a TSC: O thin film/a SiOx thin film, which widens the selection range of the dielectric layer material of the memristor switching device. As the resistivity of the a-TSC: O film is adjustable in a wide range, and the a-SiOx thin films are transparent and can provide oxygen vacancy electromigration channels, thea-TSC: O films have good resistance and can be used as the dielectric layer of memristor switches. At the same time, due to intrinsic a-TSC ceramic thin film has excellent conductivity and near infrared transmittance, it can be used as top electrode material to construct near infrared transparent memristor switching device together with top electrode formed by transparent conductive thin film. Inaddition, the memristor switching device provided by the invention has the advantages of simple preparation process, low cost and high reliability, and is favorable for realizing large-scale production.

The invention relates to the technical field of semiconductors, in particular to a resistive random access memory, and a preparation method and application thereof. The invention discloses a resistiverandom access memory, comprising: a substrate, a bottom electrode, a first top electrode, a second top electrode and a double-perovskite oxide thin film; the bottom electrode is arranged on the surface of the substrate; the double-perovskite oxide thin film and the first top electrode are arranged on one side of the bottom electrode deviating from the substrate; the second top electrode is arranged on one side of the double-perovskite oxide thin film deviating from the bottom electrode; and the double-perovskite oxide film is selected from Bi2NiMnO6, Bi2Ni0.5Mn1.5O6 or Bi2Ni0.1Mn1.9O6 films.Compared with the existing resistive random access memories, the resistive random access memory provided by the invention using the double-perovskite oxide film as a dielectric layer can realize conversion between a high resisstance state and a low resistance state, an HRS/LRS value can reach 200, which exhibits an excellent resistance change characteristic, the resistive random access memory havegood stability, and the technical problems that the existing resistive random access memory has a poor resistance change effect and is easy to damaged are solved.

The invention discloses a memristor switch device based on an a-TSC:O ceramic film and a preparation method thereof, and belongs to the technical field of photoelectric devices. An a-TSC:O film/a-TiOxfilm medium layer structure is innovatively proposed on the basis of a traditional memristor switch device structure, and the selection range of a memristor switch device medium layer material is widened. The resistance change properties of the a-TSC:O film can be adjusted in a wide range, the a-TiOx film is transparent and can provide oxygen vacancy electromigration channels, and therefore the a-TSC:O film has the good resistance change properties and can serve as a medium layer of a memristor switch device. Meanwhile, the a-TSC ceramic film has the very good electrical conductivity and near-infrared transmittance, therefore, the a-TSC ceramic film can serve as a top electrode material, and the a-TSC ceramic film and a top electrode formed by a transparent conductive film jointly form the near-infrared full-transparent memristor switch device. In addition, the invention provides a preparation technology of the memristor switch device. The preparation technology is simple, low in costand high in reliability, and large-scale production can be achieved.

The invention relates to a preparation method of a BaTiO3 micron fiber with a resistance characteristic. An Si chip is selected and sequentially subjected to ultrasonic treatment with acetone, absolute ethanol and deionized water, Ba(CH3COO)2 powder is dissolved in a glacial acetic acid and ethylene glycol monomethyl ether mixed solution, a solution A is obtained after stirring, a Ti(OC4H9)4 solution is dissolved in an ethanol and lactic acid mixed solution, a solution B is obtained after stirring, PVP powder is dissolved in a mixed solution of A and B and stirred in a water bath at 80 DEG C, a solution C is obtained, BaTiO3 micron fiber is spun on the Si chip with a glass rod, and the fiber is annealed in a tubular furnace at 900 DEG C. The defects of low operation speed, high loss and short service life of traditional Flash memory are overcome. The process is simple, the fiber is synthesized in one step, raw materials are cheap, the synthesis quantity is large, and the fiber is flexible and convenient, has very high resistive switch ratio and has the good resistive switch characteristic under the control of voltage.

The invention discloses a memory cell of a resistor type random access memory, which comprises an insulation substrate, a first electrode, an intermediate layer and a second electrode, wherein the first electrode is arranged on the surface of the insulation substrate, the intermediate layer is arranged on the surface of the first electrode, and the second electrode is arranged on the intermediate layer. The intermediate layer consists of a poly Schiff base film doped with protonic acid, wherein the poly Schiff base film is formed by doping protonic acid on nitrogen atoms of imine double bond (C=N) in the poly Schiff base. Compared with a memory cell with common poly Schiff base serving as the intermediate layer, power consumption of the memory cell with the poly Schiff base film doped with protonic acid as the intermediate layer can be reduced effectively, self-rectifying of the memory cell is realized, resistance change of the memory cell is slow without sudden change, better uniformity of resistance change can be achieved and the memory cell has potential application value in the field of memory devices.