Preparation method of BaTiO3 micron fiber with resistance characteristic

A technology with micron fibers and resistive switching characteristics, applied in chemical instruments and methods, inorganic chemistry, titanate, etc., can solve the problems of slow flash storage operation, high cost, cumbersome preparation process, etc., and achieve good resistive switching characteristics. , The effect of high resistance switching ratio and simple preparation process

Active Publication Date: 2017-08-18
YANGZHOU UNIV
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Problems solved by technology

Traditional Flash storage faces problems such as slow operation speed, high loss, and short life, which are far from meeting actual needs
However, the conventional planar BaTiO 3 The preparati

Method used

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  • Preparation method of BaTiO3 micron fiber with resistance characteristic
  • Preparation method of BaTiO3 micron fiber with resistance characteristic
  • Preparation method of BaTiO3 micron fiber with resistance characteristic

Examples

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[0033] Examples:

[0034] Choose a 10mm*10mm Si wafer, and sonicate it with acetone, absolute ethanol, and deionized water for 15 minutes; choose Ba(CH 3 COO) 2 The powder (5.1g) was dissolved in a mixed solution of 20ml of glacial acetic acid and 20ml of ethylene glycol methyl ether. After stirring for half an hour, solution A was obtained; and Ti(OC 4 H 9 ) 4 The solution (7.4g) was dissolved in a mixed solution of 20ml ethanol and 2ml lactic acid and stirred for 15 minutes to obtain solution B; then PVP powder (0.5g) was dissolved in the mixed solution of A and B and stirred in a water bath at 80°C for 5 hours. Get solution C. Then use a glass rod to spin out BaTiO on the Si wafer 3 Micron fibers are finally annealed at 900°C in a tube furnace for 1 hour.

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Abstract

The invention relates to a preparation method of a BaTiO3 micron fiber with a resistance characteristic. An Si chip is selected and sequentially subjected to ultrasonic treatment with acetone, absolute ethanol and deionized water, Ba(CH3COO)2 powder is dissolved in a glacial acetic acid and ethylene glycol monomethyl ether mixed solution, a solution A is obtained after stirring, a Ti(OC4H9)4 solution is dissolved in an ethanol and lactic acid mixed solution, a solution B is obtained after stirring, PVP powder is dissolved in a mixed solution of A and B and stirred in a water bath at 80 DEG C, a solution C is obtained, BaTiO3 micron fiber is spun on the Si chip with a glass rod, and the fiber is annealed in a tubular furnace at 900 DEG C. The defects of low operation speed, high loss and short service life of traditional Flash memory are overcome. The process is simple, the fiber is synthesized in one step, raw materials are cheap, the synthesis quantity is large, and the fiber is flexible and convenient, has very high resistive switch ratio and has the good resistive switch characteristic under the control of voltage.

Description

technical field [0001] The invention belongs to the field of ferroelectric functional materials, in particular to a BaTiO with resistive switching properties 3 Process for the preparation of microfibers. Background technique [0002] Before the present invention was made, along with the development of information technology. Traditional Flash storage faces problems such as slow operation speed, high loss, and short lifespan, which are far from meeting actual needs. However, the conventional planar BaTiO 3 The preparation process of resistive random access memory devices is cumbersome, the resulting products are small, expensive, and poor in flexibility, which also limits their application in the industrial field. [0003] BaTiO 3 is an important ferroelectric material with higher resistance-to-switch ratio, the preparation of BaTiO 3 The fiber is expected to improve the status quo and realize the resistive switching response under voltage regulation. Contents of the i...

Claims

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Application Information

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IPC IPC(8): C04B35/468C04B35/622C01G23/00
CPCC01G23/006C01P2002/72C01P2004/03C01P2004/04C01P2004/10C01P2004/51C01P2004/61C01P2006/40C04B35/468C04B35/622C04B35/62227C04B2235/656C04B2235/6567C04B2235/94
Inventor 缪志雷王强曾祥华
Owner YANGZHOU UNIV
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