Preparation method of BaTiO3 micron fiber with resistance characteristic
A technology with micron fibers and resistive switching characteristics, applied in chemical instruments and methods, inorganic chemistry, titanate, etc., can solve the problems of slow flash storage operation, high cost, cumbersome preparation process, etc., and achieve good resistive switching characteristics. , The effect of high resistance switching ratio and simple preparation process
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[0034] Choose a 10mm*10mm Si wafer, and sonicate it with acetone, absolute ethanol, and deionized water for 15 minutes; choose Ba(CH 3 COO) 2 The powder (5.1g) was dissolved in a mixed solution of 20ml of glacial acetic acid and 20ml of ethylene glycol methyl ether. After stirring for half an hour, solution A was obtained; and Ti(OC 4 H 9 ) 4 The solution (7.4g) was dissolved in a mixed solution of 20ml ethanol and 2ml lactic acid and stirred for 15 minutes to obtain solution B; then PVP powder (0.5g) was dissolved in the mixed solution of A and B and stirred in a water bath at 80°C for 5 hours. Get solution C. Then use a glass rod to spin out BaTiO on the Si wafer 3 Micron fibers are finally annealed at 900°C in a tube furnace for 1 hour.
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