Preparation method of BaTiO3 micron fiber with resistance characteristic

Abstract

The invention relates to a preparation method of a BaTiO3 micron fiber with a resistance characteristic. An Si chip is selected and sequentially subjected to ultrasonic treatment with acetone, absolute ethanol and deionized water, Ba(CH3COO)2 powder is dissolved in a glacial acetic acid and ethylene glycol monomethyl ether mixed solution, a solution A is obtained after stirring, a Ti(OC4H9)4 solution is dissolved in an ethanol and lactic acid mixed solution, a solution B is obtained after stirring, PVP powder is dissolved in a mixed solution of A and B and stirred in a water bath at 80 DEG C, a solution C is obtained, BaTiO3 micron fiber is spun on the Si chip with a glass rod, and the fiber is annealed in a tubular furnace at 900 DEG C. The defects of low operation speed, high loss and short service life of traditional Flash memory are overcome. The process is simple, the fiber is synthesized in one step, raw materials are cheap, the synthesis quantity is large, and the fiber is flexible and convenient, has very high resistive switch ratio and has the good resistive switch characteristic under the control of voltage.

Description

technical field [0001] The invention belongs to the field of ferroelectric functional materials, in particular to a BaTiO with resistive switching properties 3 Process for the preparation of microfibers. Background technique [0002] Before the present invention was made, along with the development of information technology. Traditional Flash storage faces problems such as slow operation speed, high loss, and short lifespan, which are far from meeting actual needs. However, the conventional planar BaTiO 3 The preparation process of resistive random access memory devices is cumbersome, the resulting products are small, expensive, and poor in flexibility, which also limits their application in the industrial field. [0003] BaTiO 3 is an important ferroelectric material with higher resistance-to-switch ratio, the preparation of BaTiO 3 The fiber is expected to improve the status quo and realize the resistive switching response under voltage regulation. Contents of the i...

AI Technical Summary

Problems solved by technology

Traditional Flash storage faces problems such as slow operation speed, high loss, and short life, which are far from meeting actual needs

However, the conventional planar BaTiO 3 The preparation process of resistive random access memory devices is cumbersome, the resulting product is small, expensive, and poor in flexibility, which also limits its application in the industrial field

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