Resistive random access memory doped with metal oxide and preparation method thereof

A technology of random access memory and oxide, which is applied in the field of microelectronics, can solve the problems of high production cost and inability to meet the needs of low-cost industrial production, achieve good resistance change effect, realize large-scale industrial application, and low-cost Effect

Pending Publication Date: 2019-10-01
XIAN JIAOTONG LIVERPOOL UNIV
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Traditional resistive metal oxide films can be realized by sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD) and other methods, but the above methods are limited by equipment or environmental influences, and the production cost is high, which cannot meet large Batch and low-cost industrial production needs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive random access memory doped with metal oxide and preparation method thereof
  • Resistive random access memory doped with metal oxide and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0032] as attached Figure 1-2 As shown, a resistive random access memory doped with metal oxides includes a top electrode layer arranged from top to bottom, a resistive oxide layer 200 and a substrate; The top electrode layer 101 on the oxide layer 200, the top electrode layer is provided with a protective layer 100 on the surface away from the resistive oxide layer 200; the resistive oxide layer 200 is a doped metal oxide layer; the substrate includes a set The upper bottom electrode layer 300 and the lower insulating layer; the insulating layer adopts a stacked three-layer structure, including a titanium (Ti) thin film layer, a silicon dioxide (SiO2) thin film layer and a silicon (Si ) film layer; the bottom electrode layer is a metal platinum (Pt) film layer with a thickness of 100nm; the protective layer 100 is a metal aluminum (Al) film layer; the top electrode 101 in the top electrode layer is a cylindrical metal compound Nickel (Ni) film layer with a thickness of 40nm...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
pore sizeaaaaaaaaaa
Login to view more

Abstract

The invention discloses a resistive random access memory doped with a metal oxide and a preparation method thereof. The resistive random access memory comprises a top electrode layer, a resistive oxide layer and a substrate arranged from the top to bottom. The top electrode layer comprises several top electrodes set on the resistive oxide layer. The resistive oxide layer is a doped metal oxide layer. The preparation method includes the step of (a) cleaning a substrate, (b) preparing the resistive oxide layer, (c) preparing a top electrode layer, and (d) preparing a protective layer. The metaloxide layer and doped powder in the invention are all prepared by a solution method, the preparation of a low-cost RRAM is realized, compared with an RRAM device of a single-layer or double-layer puremetal oxide layer, the resistive characteristics of a doped RRAM device are better, equipment and raw material investment is small, and the large-scale industrial application can be achieved.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a metal oxide powder-doped RRAM (Resistive random access memory, resistive random access memory) and a preparation method thereof. Background technique [0002] As one of the most potential non-volatile memories, Resistive Random Access Memory (RRAM) has received more and more attention in research because of its excellent performance. RRAM, which uses metal oxide as the resistive variable layer, affects the device through the application of voltage, so that the memory changes back and forth between high and low configurations, and realizes the operation of erasing and writing data and blocking current channels. The characteristics of low power consumption make RRAM devices extremely valuable for research. [0003] Traditional resistive metal oxide films can be realized by sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD) and other methods, but ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/883H10N70/021
Inventor 沈棕杰赵春赵策洲杨莉罗天张艺黄彦博
Owner XIAN JIAOTONG LIVERPOOL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap