Resistive random access memory doped with metal oxide and preparation method thereof
A technology of random access memory and oxide, which is applied in the field of microelectronics, can solve the problems of high production cost and inability to meet the needs of low-cost industrial production, achieve good resistance change effect, realize large-scale industrial application, and low-cost Effect
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[0032] as attached Figure 1-2 As shown, a resistive random access memory doped with metal oxides includes a top electrode layer arranged from top to bottom, a resistive oxide layer 200 and a substrate; The top electrode layer 101 on the oxide layer 200, the top electrode layer is provided with a protective layer 100 on the surface away from the resistive oxide layer 200; the resistive oxide layer 200 is a doped metal oxide layer; the substrate includes a set The upper bottom electrode layer 300 and the lower insulating layer; the insulating layer adopts a stacked three-layer structure, including a titanium (Ti) thin film layer, a silicon dioxide (SiO2) thin film layer and a silicon (Si ) film layer; the bottom electrode layer is a metal platinum (Pt) film layer with a thickness of 100nm; the protective layer 100 is a metal aluminum (Al) film layer; the top electrode 101 in the top electrode layer is a cylindrical metal compound Nickel (Ni) film layer with a thickness of 40nm...
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