All-carbon memristor and preparation method thereof

A memristor and graphene technology, applied in electrical components and other directions, can solve the problems of complex preparation process, difficult industrial production, harsh preparation conditions, etc., and achieve the effects of simple preparation process, stable performance and good conductivity

Active Publication Date: 2018-10-19
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when reduced graphene oxide is used as an electrode material, the preparation conditions are harsh and high temperature treatment is required, while when carbon nanotubes are used as an electrode material, the preparation process is complicated, the cost is high, and it is not easy for industrial production

Method used

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  • All-carbon memristor and preparation method thereof
  • All-carbon memristor and preparation method thereof
  • All-carbon memristor and preparation method thereof

Examples

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Effect test

Embodiment 1

[0045] The preparation method of the all-carbon memristor of this embodiment is as follows:

[0046] (1) Provide a substrate and pretreat the substrate: the substrate in this embodiment is a glass slide, which is an insulating substrate. The substrate was ultrasonically treated with acetone for 30 minutes, and dried with nitrogen gas to remove surface impurities and dust substances.

[0047] (2) Transfer the bottom electrode layer on the substrate by vacuum filtration: get acetone and dissolve it in deionized water, the mass fraction of acetone is about 75%, to form an acetone aqueous solution, and add high-purity flake graphite powder to the acetone aqueous solution to obtain 3mg / ml of graphite dispersion, the graphite dispersion is placed in an ultrasonic cleaning machine to vibrate for 1h to obtain a graphene dispersion containing graphene, take it out and let it stand for 24h, then carry out the graphene dispersion containing graphene at 1000rpm, 4h Centrifuge to obtain ...

Embodiment 2

[0055] The difference with Example 1 is only that the graphene oxide solution taken in step (3) is 0.6ml, and vacuum filtration is carried out after being diluted to 100ml. After the transfer, the thickness of the graphene oxide intermediate dielectric layer is about 30nm.

[0056] The electrical properties of the memristor prepared in this embodiment were tested. During the test, the bottom electrode was grounded and the top electrode was applied with voltage. Its current-voltage characteristic curve is as follows Figure 4 As shown, it can be seen from the figure that the characteristic curve of the device includes two parts: one part is the setting process, and the other part is the reset process. It can be seen that the device realizes the transformation of resistance.

Embodiment 3

[0058] The difference with Example 1 is only that the graphene dispersion liquid taken in the step (2) is 20ml, and vacuum filtration is carried out after being diluted to 100ml. After transfer, its graphene bottom electrode thickness is about 260nm. The current-voltage characteristic curve of the memristor prepared in this embodiment is as follows Figure 5 shown.

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Abstract

The invention discloses an all-carbon memristor comprising a substrate, a graphene bottom electrode layer, a graphene oxide intermediate dielectric layer and a graphene top electrode layer that are arranged successively from bottom to top. In addition the invention also discloses a preparation method. The method comprises: step one, preparing a graphene bottom electrode layer on a substrate by using a suction filtration method; step two, transferring a graphene oxide intermediate dielectric layer on the graphene bottom electrode layer by using a suction filtration method; and step three, transferring the graphene top electrode layer on the graphene oxide intermediate medium layer by using a suction filtration method. According to the invention, the all-carbon memristor is prepared by usingthe low temperature solution method, so that the cost of preparing the memristor is reduced substantially. The process is simple. The all-carbon memristor and the preparation method thereof are suitable for the large-scale industrial production.

Description

technical field [0001] The invention relates to the field of preparation of memristors, in particular to an all-carbon memristor and a preparation method thereof. Background technique [0002] Memristor (memristor) is the fourth basic passive electronic device besides resistors, capacitors, and inductors. Memristors have the dimension of resistance, but have nonlinear electrical properties different from ordinary resistors. A memristor's resistance changes in response to the amount of charge flowing through it, and it maintains its resistance when the current is turned off. Memristors have been extensively studied in resistive memory and neural networks. [0003] Resistive memory has the advantages of simple structure, high integration, high operating speed, low energy consumption, and compatibility with traditional CMOS processes. It is expected to completely replace static memory, dynamic memory and flash memory in the near future. Memristors are used in artificial inte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/8845H10N70/011
Inventor 诸葛飞竺臻楠俞家欢曹鸿涛
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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