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A memristive switch device based on a-tsc:o ceramic film and its preparation method

A technology for ceramic thin films and switching devices, applied in electrical components and other directions, can solve problems such as research reports on applications in the field of optoelectronics that have not been seen, achieve good near-infrared transmittance, achieve large-scale production, and broaden the selection range.

Active Publication Date: 2020-02-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Based on the above content, we can see that the existing Ti 3 SiC 2 The development and research of applications mainly focus on high-temperature structural materials, electrode materials, machinable ceramic materials, anti-friction component materials and anti-corrosion protective layers, and there are no research reports on their application in the field of optoelectronics

Method used

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  • A memristive switch device based on a-tsc:o ceramic film and its preparation method
  • A memristive switch device based on a-tsc:o ceramic film and its preparation method

Examples

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Embodiment 1

[0031] This embodiment provides a memristive switching device, such as figure 1 shown, the structure from bottom to top is "ITO glass slide 1, a-SiOx Film 2, a-TSC:O film 3, a-TSC film 4" vertical four-layer structure, "a-SiO x The thin film 2 / a-TSC:O thin film 3" double-layer structure acts as a double resistive layer (ie, the dielectric layer of the memristive switching device).

[0032] The present embodiment provides a method for preparing the above-mentioned memristive switching device, and the preparation process includes the following steps:

[0033] Step A: prepare an ITO glass slide 1 as a transparent substrate with a bottom electrode, and carry out cleaning and drying treatment according to a standard process;

[0034] Step B: using a silicon target as a raw material target, oxygen and argon as working gases, and depositing an a-SiOx film 2 on the ITO glass substrate 1 by reactive radio frequency sputtering as the first resistive layer;

[0035] Step C: Using Ti 3...

Embodiment 2

[0052] This embodiment provides a method for preparing a memristive switching device, and the preparation process includes the following steps:

[0053] Step A: prepare a K9 glass substrate as a transparent substrate, and carry out cleaning and drying treatment according to a standard process; then deposit an ITO film on it as a bottom electrode;

[0054] Step B: using a crystalline silicon target as a raw material target, oxygen and argon as working gases, and depositing an a-SiOx film on the ITO film by reactive radio frequency sputtering as the first resistive layer;

[0055] Step C: Using Ti 3 SiC 2 Polycrystalline powder is used as the raw material target, and oxygen and argon are used as working gases. The a-TSC:O film is deposited on the a-SiOx film by reactive radio frequency sputtering as the second resistive switching layer. The specific operations are as follows:

[0056] C1: Target preparation:

[0057] Ti 3 SiC 2 The powder was added to deionized water and st...

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Abstract

A memristive switch device based on a-TSC:O ceramic film and a preparation method thereof, belonging to the technical field of optoelectronic devices. Based on the structure of traditional memristive switch devices, the present invention innovatively proposes "a-TSC:O thin film / a-SiO x The dielectric layer structure of "thin film" broadens the selection range of dielectric layer materials for memristive switching devices. Since the resistance switching properties of a‑TSC:O thin films can be adjusted in a wide range, and a‑SiO x The film is transparent and can provide an oxygen-vacancy electromigration channel, so that the a-TSC:O film has good resistive switching properties and can be used as a dielectric layer of a memristive switch device. At the same time, since the intrinsic a-TSC ceramic film has very good electrical conductivity and near-infrared transmittance, it can also be used as a top electrode material, and a near-infrared fully transparent memristive switch can be constructed together with the top electrode formed by a transparent conductive film. device. In addition, the present invention proposes that the memristive switch device has a simple preparation process, low cost, and high reliability, which is beneficial to realize large-scale production.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic devices, and in particular relates to a memristive switching device based on a-TSC:O ceramic film and a preparation method thereof. Background technique [0002] As a new type of nonlinear device, memristor has received extensive attention from researchers. So far, materials such as Ag, Cu, Au, Pt and W have been used as their electrode materials; a-Si, a-SiO x and TiO 2 Iso-dielectric thin films are common resistive-switching layer materials for memristive switching devices. In recent years, researchers at home and abroad have constructed and fabricated a variety of memristive switching devices with excellent resistive switching functions based on various electrodes and resistive switching layer materials, making them the darling of next-generation storage technologies. [0003] Ti 3 SiC 2 It is a ternary layered carbide, the only MAX phase material containing Si element, and has both...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/881H10N70/011H10N70/026
Inventor 次会聚陈奕丞宋宇浩刘诚李东阳李伟
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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