Memristor switch device based on a-TSC:O ceramic film and preparation method thereof

A technology of ceramic thin film and switching device, which is applied in the field of memristive switching device based on a-TSC:O ceramic thin film and its preparation, can solve problems such as research reports on applications in the field of optoelectronics that have not been seen, and achieve good near-infrared transmittance , good resistance performance, the effect of simple preparation process

Active Publication Date: 2018-12-07
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Based on the above content, we can see that the existing Ti 3 SiC 2 The development and research of applications mainly focus on high-temperature structural materials, electrode materials

Method used

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  • Memristor switch device based on a-TSC:O ceramic film and preparation method thereof
  • Memristor switch device based on a-TSC:O ceramic film and preparation method thereof

Examples

Experimental program
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Example Embodiment

[0030] Example 1:

[0031] This embodiment provides a memristive switching device, such as figure 1 As shown, the structure from bottom to top is "ITO glass 1, a-TiO x Film 2, a-TSC:O film 3, a-TSC film 4" vertical four-layer structure, "a-TiO x The film 2 / a-TSC:O film 3" double layer structure is used as the double resistance layer (that is, the dielectric layer of the memristive switching device).

[0032] This embodiment provides a method for manufacturing the above memristive switch device, and the manufacturing process includes the following steps:

[0033] Step A: Prepare the ITO glass slide 1 as a transparent substrate with a bottom electrode, and perform cleaning and drying treatments according to standard processes;

[0034] Step B: using a titanium target as a raw material target, oxygen and argon as working gases, and depositing a-TiOx film 2 on the ITO glass substrate 1 as the first resistive layer by reactive radio frequency sputtering;

[0035] Step C: Use Ti 3 SiC 2 Polyc...

Example Embodiment

[0051] Example 2:

[0052] This embodiment provides a method for manufacturing a memristive switch device, and the manufacturing process includes the following steps:

[0053] Step A: Prepare a K9 glass substrate as a transparent substrate, and perform cleaning and drying treatments according to standard processes; then deposit an ITO film on it as a bottom electrode;

[0054] Step B: Using a titanium target as a raw material target, oxygen and argon as working gases, and depositing a-TiOx film on the ITO film by reactive radio frequency sputtering as the first resistive layer;

[0055] Step C: Use Ti 3 SiC 2 Polycrystalline powder is used as the raw material target, oxygen and argon are used as working gases, and a-TSC:O film is deposited on the a-TiOx film by reactive radio frequency sputtering as the second resistive layer. The specific operations are as follows:

[0056] C1: Target preparation:

[0057] Will Ti 3 SiC 2 Add the powder to deionized water and stir evenly to obtain Ti 3 ...

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Abstract

The invention discloses a memristor switch device based on an a-TSC:O ceramic film and a preparation method thereof, and belongs to the technical field of photoelectric devices. An a-TSC:O film/a-TiOxfilm medium layer structure is innovatively proposed on the basis of a traditional memristor switch device structure, and the selection range of a memristor switch device medium layer material is widened. The resistance change properties of the a-TSC:O film can be adjusted in a wide range, the a-TiOx film is transparent and can provide oxygen vacancy electromigration channels, and therefore the a-TSC:O film has the good resistance change properties and can serve as a medium layer of a memristor switch device. Meanwhile, the a-TSC ceramic film has the very good electrical conductivity and near-infrared transmittance, therefore, the a-TSC ceramic film can serve as a top electrode material, and the a-TSC ceramic film and a top electrode formed by a transparent conductive film jointly form the near-infrared full-transparent memristor switch device. In addition, the invention provides a preparation technology of the memristor switch device. The preparation technology is simple, low in costand high in reliability, and large-scale production can be achieved.

Description

Technical field [0001] The invention belongs to the technical field of optoelectronic devices, and in particular relates to a memristive switch device based on a-TSC:O ceramic film and a preparation method thereof. Background technique [0002] As a new type of nonlinear device, memristors have received extensive attention from researchers. So far, Ag, Cu, Au, Pt and W have been used as electrode materials; a-Si, a-SiO x And TiO 2 Dielectric thin films are common resistive layer materials for memristive switching devices. In recent years, researchers at home and abroad have constructed and prepared a variety of memristive switching devices with excellent resistance switching functions based on various electrodes and resistive layer materials, making them the darling of next-generation storage technologies. [0003] Ti 3 SiC 2 It is a ternary layered carbide. It is the only MAX phase material containing Si. It has the properties of ceramics and metals. It can be referred to as TSC ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08C23C14/06
CPCC23C14/0036C23C14/06C23C14/083C23C14/35
Inventor 宋宇浩次会聚陈奕丞刘诚李东阳李伟
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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