Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory

A resistive memory, metal ion technology, applied in static memory, digital memory information, semiconductor/solid-state device manufacturing, etc., can solve the problems of performance difference, device failure, low yield, etc., to achieve excellent resistive characteristics, high application The effect of value, low manufacturing cost

Active Publication Date: 2012-04-11
FUZHOU UNIVERSITY
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the organic materials selected for organic memory at present show problems such as poor chemical stability and thermal stability.
In the low-resistance state, the Joule heat generated by the large current is easy to decompose the organic layer, thus causing the device to fail
In addition, there are also problems with the stability and uniformity of the resistance state transitions of different memory cells on the same memory chip.
Due to the fluctuation of the composition of the organic active layer of the device, different memory cells exhibit different write voltages, erase voltages, and different low-resistance state and high-resistance state values; at the same time, some memory cells do not have resistive switching characteristics, that is, the yield rate is low
The performance difference between different memory cells and the low yield rate seriously limit the practical application of organic resistive memory materials in large-scale memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory
  • Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory
  • Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Step 1, forming the bottom electrode 20 on the insulating substrate 10 .

[0029] In this step, the material used for the bottom electrode 20 can be a metal electrode of Cu, W, Co, Ni, Ta, Ti, Zn, Al, Cr or a composite metal electrode of two or more combinations, and can be indium oxide doped Tin (ITO), zinc oxide doped with aluminum (AZO), can also be P-type silicon, N-type silicon materials. It can be formed by methods such as physical vapor deposition, chemical vapor deposition, or electrochemical deposition. The electrode can be formed on the surface of insulating substrates such as silicon dioxide, glass, quartz, ceramics, or other insulating flexible substrate materials. Parameters such as width and thickness of the electrodes are not limiting, and those skilled in the art can make choices according to specific conditions. The patterning of the bottom electrode can be realized through photolithography process steps. In this embodiment, a thermal evaporation met...

Embodiment 2

[0034] In this embodiment, the storage device is fabricated in the same manner as in the first embodiment, except that the second step is to form a polyimide / sodium ion composite film 30 on the surface of the bottom electrode 20 . Specifically:

[0035] In this embodiment, 2,3,3',4-biphenyltetracarboxylic dianhydride and p-aniline are mixed in a certain proportion and dissolved in nitrogen, a polyamic acid solution formed in nitrogen-dimethylformamide. Mix sodium chloride with the formed polyamic acid solution in proportion (the concentration of sodium ions is 0.01mol / L), and ultrasonically disperse to form a uniform polyamic acid / sodium ion mixed solution. The polyamic acid / sodium ion mixed solution is applied on the top of the bottom electrode 20 by a spin coating method to form a polyamic acid / sodium ion composite film. Under the protection of argon atmosphere, the polyimide / sodium ion composite film 30 is formed by heat treatment at 350 degrees centigrade for 1 hour.

Embodiment 3

[0037] In this embodiment, the storage device is fabricated in the same manner as in the first embodiment, except that the second step is to form a polyimide / potassium ion composite film 30 on the surface of the bottom electrode 20 . Specifically:

[0038] In this embodiment, 2,3,3',4-biphenyltetracarboxylic dianhydride and p-aniline are mixed in a certain proportion and dissolved in nitrogen, a polyamic acid solution formed in nitrogen-dimethylformamide. Potassium chloride was mixed with the formed polyamic acid solution in proportion (the concentration of potassium ions was 0.01 mol / L), and ultrasonically dispersed to form a uniform polyamic acid / potassium ion mixed solution. The polyamic acid / potassium ion mixed solution is applied on the top of the bottom electrode 20 by a spin coating method to form a polyamic acid / potassium ion composite film. Under the protection of argon atmosphere, the polyimide / potassium ion composite film 30 is formed by heat treatment at 350 degre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a resistive random access memory based on a polymer / metal ion composite system, and a preparation method for the resistive random access memory. The resistive random access memory comprises an insulating substrate, and a bottom electrode, a top electrode and a polyimide / metal ion composite film which are arranged on the insulating substrate; and the polyimide / metal ion composite film is positioned between the bottom electrode and the top electrode. The resistive random access memory is high in repeatability, response speed, reliability, simple in structure and low in manufacturing cost, is used for the field of highly integrated high-capacity multi-value memories, and has high application value.

Description

technical field [0001] The invention relates to semiconductor storage and belongs to the field of organic memory, in particular to an organic resistive variable memory based on polyimide / metal ions and a preparation method thereof. Background technique [0002] The rapid development of digital communication technology has led to a rapid increase in the demand for various storage devices. Especially for storage devices suitable for applications including mobile terminals, smart cards, digital cameras, game memory cards, etc., high storage density and fast writing and reading speeds are required. The currently widely used non-volatile memory is silicon-based flash memory. However, the technical limitation of conventional flash memory is that the number of write / erase cycles is limited, the write speed is relatively slow, and it is difficult to develop to high-density storage due to certain physical limitations and processing difficulties. Given these limitations of conve...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/00G11C13/00
Inventor 郭太良李福山吴朝兴张永志谢剑星张永爱
Owner FUZHOU UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com