Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory
A resistive memory, metal ion technology, applied in static memory, digital memory information, semiconductor/solid-state device manufacturing, etc., can solve the problems of performance difference, device failure, low yield, etc., to achieve excellent resistive characteristics, high application The effect of value, low manufacturing cost
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[0027] Example 1:
[0028] Step one, forming a bottom electrode 20 on the insulating substrate 10.
[0029] In this step, the material used for the bottom electrode 20 can be a metal electrode of Cu, W, Co, Ni, Ta, Ti, Zn, Al, Cr or a composite metal electrode of two or more of them, and it can be indium oxide doped. Tin (ITO), zinc oxide doped aluminum (AZO), or P-type silicon or N-type silicon materials. It can be formed by physical vapor deposition, chemical vapor deposition, or electrochemical deposition. The electrode can be formed on the surface of an insulating substrate such as silicon dioxide, glass, quartz, ceramic, etc., or can be formed on other insulating flexible substrate materials. Parameters such as the width and thickness of the electrode are not restrictive, and those skilled in the art can make a choice according to specific conditions. The patterning of the bottom electrode can be achieved through photolithography process steps. In this embodiment, a therma...
Example Embodiment
[0033] Example 2:
[0034] This embodiment manufactures the storage device in the same manner as the first embodiment, except that the second step is to form a polyimide / sodium ion composite film 30 on the surface of the bottom electrode 20. Specifically:
[0035] In this embodiment, 2,3,3',4-biphenyltetracarboxylic dianhydride and p-aniline are mixed in a certain proportion, and dissolved in nitrogen, nitrogen-dimethylformamide to form a polyamic acid solution. The sodium chloride and the formed polyamic acid solution are mixed in proportion (where the concentration of sodium ions is 0.01 mol / L), and ultrasonically dispersed to form a uniform polyamic acid / sodium ion mixed solution. The spin coating method is used to apply the polyamic acid / sodium ion mixed solution on the upper part of the bottom electrode 20 to form a polyamic acid / sodium ion composite film. The polyimide / sodium ion composite film 30 is formed by heat treatment at 350 degrees Celsius for 1 hour under the prote...
Example Embodiment
[0036] Example 3:
[0037] In this embodiment, the storage device is manufactured in the same manner as the first embodiment, except that the second step is to form a polyimide / potassium ion composite film 30 on the surface of the bottom electrode 20. Specifically:
[0038] In this embodiment, 2,3,3',4-biphenyltetracarboxylic dianhydride and p-aniline are mixed in a certain proportion, and dissolved in nitrogen, nitrogen-dimethylformamide to form a polyamic acid solution. Potassium chloride is mixed with the formed polyamic acid solution in proportion (where the potassium ion concentration is 0.01 mol / L), and ultrasonically dispersed to form a uniform polyamic acid / potassium ion mixed solution. The spin coating method is used to apply the polyamic acid / potassium ion mixed solution on the upper part of the bottom electrode 20 to form a polyamic acid / potassium ion composite film. The polyimide / potassium ion composite film 30 is formed by heat treatment at 350 degrees Celsius for 1 ...
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