Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory

A resistive memory, metal ion technology, applied in static memory, digital memory information, semiconductor/solid-state device manufacturing, etc., can solve the problems of performance difference, device failure, low yield, etc., to achieve excellent resistive characteristics, high application The effect of value, low manufacturing cost

Active Publication Date: 2012-04-11
FUZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the organic materials selected for organic memory at present show problems such as poor chemical stability and thermal stability.
In the low-resistance state, the Joule heat generated by the large current is easy to decompose the organic layer, thus causing the device to fail
In addition, there are also problems with the stability and uniformity of the resistance state transitions of different memory cells on the same memory chip.
Due to the fluctuation of the composi

Method used

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  • Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory
  • Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory
  • Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0027] Example 1:

[0028] Step one, forming a bottom electrode 20 on the insulating substrate 10.

[0029] In this step, the material used for the bottom electrode 20 can be a metal electrode of Cu, W, Co, Ni, Ta, Ti, Zn, Al, Cr or a composite metal electrode of two or more of them, and it can be indium oxide doped. Tin (ITO), zinc oxide doped aluminum (AZO), or P-type silicon or N-type silicon materials. It can be formed by physical vapor deposition, chemical vapor deposition, or electrochemical deposition. The electrode can be formed on the surface of an insulating substrate such as silicon dioxide, glass, quartz, ceramic, etc., or can be formed on other insulating flexible substrate materials. Parameters such as the width and thickness of the electrode are not restrictive, and those skilled in the art can make a choice according to specific conditions. The patterning of the bottom electrode can be achieved through photolithography process steps. In this embodiment, a therma...

Example Embodiment

[0033] Example 2:

[0034] This embodiment manufactures the storage device in the same manner as the first embodiment, except that the second step is to form a polyimide / sodium ion composite film 30 on the surface of the bottom electrode 20. Specifically:

[0035] In this embodiment, 2,3,3',4-biphenyltetracarboxylic dianhydride and p-aniline are mixed in a certain proportion, and dissolved in nitrogen, nitrogen-dimethylformamide to form a polyamic acid solution. The sodium chloride and the formed polyamic acid solution are mixed in proportion (where the concentration of sodium ions is 0.01 mol / L), and ultrasonically dispersed to form a uniform polyamic acid / sodium ion mixed solution. The spin coating method is used to apply the polyamic acid / sodium ion mixed solution on the upper part of the bottom electrode 20 to form a polyamic acid / sodium ion composite film. The polyimide / sodium ion composite film 30 is formed by heat treatment at 350 degrees Celsius for 1 hour under the prote...

Example Embodiment

[0036] Example 3:

[0037] In this embodiment, the storage device is manufactured in the same manner as the first embodiment, except that the second step is to form a polyimide / potassium ion composite film 30 on the surface of the bottom electrode 20. Specifically:

[0038] In this embodiment, 2,3,3',4-biphenyltetracarboxylic dianhydride and p-aniline are mixed in a certain proportion, and dissolved in nitrogen, nitrogen-dimethylformamide to form a polyamic acid solution. Potassium chloride is mixed with the formed polyamic acid solution in proportion (where the potassium ion concentration is 0.01 mol / L), and ultrasonically dispersed to form a uniform polyamic acid / potassium ion mixed solution. The spin coating method is used to apply the polyamic acid / potassium ion mixed solution on the upper part of the bottom electrode 20 to form a polyamic acid / potassium ion composite film. The polyimide / potassium ion composite film 30 is formed by heat treatment at 350 degrees Celsius for 1 ...

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Abstract

The invention discloses a resistive random access memory based on a polymer/metal ion composite system, and a preparation method for the resistive random access memory. The resistive random access memory comprises an insulating substrate, and a bottom electrode, a top electrode and a polyimide/metal ion composite film which are arranged on the insulating substrate; and the polyimide/metal ion composite film is positioned between the bottom electrode and the top electrode. The resistive random access memory is high in repeatability, response speed, reliability, simple in structure and low in manufacturing cost, is used for the field of highly integrated high-capacity multi-value memories, and has high application value.

Description

technical field [0001] The invention relates to semiconductor storage and belongs to the field of organic memory, in particular to an organic resistive variable memory based on polyimide / metal ions and a preparation method thereof. Background technique [0002] The rapid development of digital communication technology has led to a rapid increase in the demand for various storage devices. Especially for storage devices suitable for applications including mobile terminals, smart cards, digital cameras, game memory cards, etc., high storage density and fast writing and reading speeds are required. The currently widely used non-volatile memory is silicon-based flash memory. However, the technical limitation of conventional flash memory is that the number of write / erase cycles is limited, the write speed is relatively slow, and it is difficult to develop to high-density storage due to certain physical limitations and processing difficulties. Given these limitations of conve...

Claims

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Application Information

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IPC IPC(8): H01L51/00G11C13/00
Inventor 郭太良李福山吴朝兴张永志谢剑星张永爱
Owner FUZHOU UNIVERSITY
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