A preparing method for an inorganic halogen perovskite film

A technology of inorganic calcium and perovskite, which is applied in the direction of surface coating liquid devices, electrical components, coatings, etc., can solve the problem of insufficient density, small grain size, and the failure of inorganic perovskite films to meet the performance index requirements And other problems, to achieve excellent resistance to change performance, improve the effect of stability

Inactive Publication Date: 2018-09-14
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are still some problems in the preparation technology of inorganic perovskite thin films, such as the recently reported low-temperature liquid phase method (Ye Wu, et al., Capping CsPbBr 3 with ZnO to improve performance and stability of perovskite memristors; Nano

Method used

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  • A preparing method for an inorganic halogen perovskite film
  • A preparing method for an inorganic halogen perovskite film
  • A preparing method for an inorganic halogen perovskite film

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0028] (1) Cleaning of the bottom electrode: Ultrasonic cleaning of the FTO conductive glass sheet (thickness about 1mm) with detergent for 20 minutes to remove organic and inorganic stains on the surface, then rinse with a large amount of tap water, and put the FTO conductive glass sheet into the Ultrasonic cleaning in deionized water for 20 minutes, followed by ultrasonic cleaning in absolute ethanol for 20 minutes to remove residual organic impurities on the surface, and this step was repeated several times. Afterwards, the FTO conductive glass sheet was ultrasonically cleaned in acetone for 20 minutes to further remove residual organic impurities on the surface. After cleaning with acetone, it was placed in a UV-ozone cleaner for 30 minutes. FTO is SnO doped with fluorine 2 Transparent conductive glass (SnO 2 : F).

[0029] (2) CsPbBr 3 Preparation of perovskite precursor storage solution: mix CsBr and PbBr at a molar ratio of 1:1 2 Dissolve in DMF, stir the reaction a...

Embodiment 2

[0035] (1) The cleaning of the bottom electrode is the same as in Example 1.

[0036] (2) CsPbBr 3 The preparation of the perovskite precursor storage solution is the same as in Example 1.

[0037] (3) spraying is the same as embodiment 1.

[0038] (4) Spin coating and annealing: transfer the above FTO substrate to a spin coater for spin coating (4000rpm ~ 1min), and continuously add 1mL of toluene and butyric acid mixed solvent on the perovskite layer during the spin coating process (wherein the content of butyric acid is 1%), and then place it on a heating plate at 250° C. for annealing for 10-15 minutes.

[0039] (5) Preparation of memristor storage unit by magnetron sputtering: place the perovskite film obtained above in a magnetron sputtering reaction chamber, and vacuumize to less than 5×10 -5Pa, high-purity argon gas was introduced as the working gas, the working pressure was 0.2Pa, the sputtering power was 65W, and the gold electrode with a thickness of about 300nm ...

Embodiment 3

[0042] (1) The cleaning of the bottom electrode is the same as in Example 1.

[0043] (2) CsPbBr 3 The preparation of the perovskite precursor storage solution is the same as in Example 1.

[0044] (3) spraying is the same as embodiment 1.

[0045] (4) Spin coating and annealing: transfer the above-mentioned FTO substrate to a spin coater for spin coating (1000rpm ~ 8s), and continuously drop 1mL of toluene and butyric acid mixed solvent on the perovskite layer during the spin coating process (wherein the content of butyric acid is 3%), and then place it on a heating plate at 250° C. for annealing for 10 to 15 minutes.

[0046] (5) Preparation of memristor storage unit by magnetron sputtering: place the perovskite film obtained above in a magnetron sputtering reaction chamber, and vacuumize to less than 5×10 -5 Pa, high-purity argon gas was introduced as the working gas, the working pressure was 0.2Pa, the sputtering power was 65W, and the gold electrode with a thickness of...

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Abstract

The invention discloses a preparing method for an inorganic perovskite film. The method includes the following steps: spraying perovskite precursor solution CsPbBr3 on the surface of a clean bottom electrode under 80-100 DEG C, spin-coating and adding a poor solvent on the bottom electrode with deposits of the perovskite CsPbBr3, performing annealing processing under 250-300 DEG C, and obtaining the inorganic perovskite film. The poor solvent is added in the spin coating process of the CsPbBr3 perovskite film prepared by the spraying method, by changing the ratio relation between butyric acidand toluene of the poor solvent, the crystal grain morphology of the CsPbBr3 film is controlled, the stability of the CsPbBr3 film is improved, the CsPbBr3 film has excellent resistive switching property, and the film is applied widely in the field of the memristor.

Description

technical field [0001] The invention belongs to the field of preparation of microelectronic devices, and relates to a preparation method of an inorganic halogen perovskite thin film. Background technique [0002] Resistive random access memory, referred to as memristor, is a non-volatile memory that changes the resistance of the material based on external voltage excitation and then records information. Compared with other memory devices with similar functions, memristors are considered to be the next generation of general-purpose memory due to a series of advantages such as high memory density, fast read and write speed, simple structure, long retention time, and low power consumption. strong contender. [0003] Inorganic halogen perovskites are used as potential optical gain materials and various optoelectronic devices (such as solar photovoltaic devices, photodetectors, light-emitting diodes, etc.) ) in the luminescent material. In addition, because inorganic halogen p...

Claims

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Application Information

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IPC IPC(8): B05D1/00H01L45/00
CPCB05D1/00H10N70/021
Inventor 胡延强张树芳苗晓亮邱婷白帆张陈明
Owner NANJING UNIV OF SCI & TECH
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