A polycrystalline tin dioxide resistive thin film and its preparation method and application

A tin dioxide, resistive film technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problems of low storage density, data loss, expensive and complex equipment, etc.

Inactive Publication Date: 2011-11-30
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Each has its advantages and disadvantages: the disadvantages of static random access memory devices are that a memory unit requires a large number of transistors, is expensive, and has low storage density; dynamic random access memory devices need to be continuously refreshed to save data when the power is turned on, and the data will be lost after power-off. will be lost; flash memory is the only memory that can retain data without power, but it is relatively slow
But the vast majority of raw materials are expensive metals, or require expensive and complicated equipment

Method used

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  • A polycrystalline tin dioxide resistive thin film and its preparation method and application
  • A polycrystalline tin dioxide resistive thin film and its preparation method and application
  • A polycrystalline tin dioxide resistive thin film and its preparation method and application

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Embodiment Construction

[0030] The specific implementation steps of the present invention are as follows:

[0031] The metal Ti target is selected, and the vacuum of the reaction chamber is evacuated to less than 2.0×10 before film deposition -3 Pa, then pass Ar gas into the reaction chamber through the variable air conduction valve, and control the working pressure in the reaction chamber to 3.0×10 -1 Pa. The sputtering current and sputtering voltage were adjusted to 200 mA and 320 V, respectively, and the sputtering time was 5 minutes to form a metallic titanium film on the ordinary glass plate. Then, a metal platinum target was used, under the same working pressure, the sputtering current and the sputtering voltage were adjusted to 80 mA and 450 V, respectively, and the sputtering time was 12 minutes to form a metal Pt bottom electrode on the Ti / glass substrate. The electrode sheet resistance is less than 3 ohms.

[0032] Use metal tin target, vacuum the reaction chamber to below 3.0×10 before film ...

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Abstract

The invention belongs to the technical field of non-volatile resistive memory devices, in particular to a polycrystalline tin dioxide resistive thin film and its preparation method and application. The invention uses glass as a substrate, uses a pure metal tin target material, and utilizes a DC magnetron sputtering technology under a certain temperature condition to prepare a polycrystalline tin dioxide semiconductor resistive variable film. Ni top electrode and platinum titanium bottom electrode were prepared by DC magnetron sputtering to test the resistive switching properties of polycrystalline tin dioxide resistive switching films. The ratio of the high and low resistance states of the polycrystalline tin dioxide resistive film is greater than 100, the erasable times of DC scanning are greater than 250 times, and the high and low resistance state maintenance time is greater than 106 seconds. The polycrystalline tin dioxide resistive switch film can be used as a resistive switch material of a resistive switchable memory. The invention also relates to a resistive variable memory using polycrystalline tin dioxide film as a resistive variable material. The invention has good application prospect in the field of non-volatile storage.

Description

Technical field [0001] The invention belongs to the technical field of non-volatile storage devices, and specifically relates to a polycrystalline tin dioxide resistive film and a preparation method and application thereof. Background technique [0002] The mechanism of Resistive Random Access Memory (RRAM) is that the external electric field triggers the reversible resistance transition effect, that is, under the action of an external voltage, the resistance of the device is in the low resistance state ("0") and the high resistance state ("1"). ") is reversible, and the obtained resistance can be maintained after the external electric field is removed. Based on this effect, the scientific community proposed a new concept of non-volatile memory-resistive random access memory 。 The ultimate goal of RRAM technology is to change the existing single electronic product containing multiple memory devices into a single memory unit. In the next few years, it will be more widely used in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35
Inventor 张群刘宝营
Owner FUDAN UNIV
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