A preparation method and product of a storage unit of a resistive random access memory

A technology of random access memory and storage unit, applied in the direction of electrical components, etc., can solve the problems of restricting the industrial production of RRAM, unfavorable practical application of storage devices, unfavorable RRAM compatibility, etc., and achieve the effect of eliminating the formation process of electricity, increasing the concentration, and reducing the initial resistance

Active Publication Date: 2018-04-20
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Claims
  • Application Information

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Problems solved by technology

[0007] The existence of the electroforming process is detrimental to the practical application of memory devices
In addition, the existence of this electrical formation process is not conducive to the compatibility of the RRAM preparation process with the traditional semiconductor CMOS process, which restricts the industrial production of RRAM

Method used

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  • A preparation method and product of a storage unit of a resistive random access memory
  • A preparation method and product of a storage unit of a resistive random access memory
  • A preparation method and product of a storage unit of a resistive random access memory

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Embodiment 1

[0046] The storage unit of the resistive random access memory prepared in this embodiment includes an insulating substrate, the insulating substrate is composed of single crystal silicon and a silicon dioxide isolation dielectric layer grown on the surface of the single crystal silicon, and the silicon dioxide isolation dielectric layer is provided with a second One electrode, the first electrode is made up of titanium with a thickness of 20nm and platinum with a thickness of 150nm; the middle layer of ZnO thin film treated with argon plasma bombardment is arranged on the surface of the first electrode, the thickness of the middle layer is 20nm, and the surface of the middle layer is made of platinum The second electrode, the thickness of the second electrode is 50nm.

[0047]The preparation method of the storage unit of the above-mentioned resistance random access memory is:

[0048] Step 1, using a thermal oxidation method to grow a silicon dioxide isolation dielectric layer...

Embodiment 2

[0058] The storage unit of the resistive random access memory prepared in this embodiment includes an insulating substrate, the insulating substrate is composed of single crystal silicon and a silicon dioxide isolation dielectric layer grown on the surface of the single crystal silicon, and the silicon dioxide isolation dielectric layer is provided with a second One electrode, the first electrode is composed of 20nm thick titanium and 150nm thick platinum; the middle layer of the ZnO thin film treated with argon plasma bombardment is arranged on the surface of the first electrode, the thickness of the middle layer is 21nm, and the surface of the middle layer is made of copper The second electrode, the thickness of the second electrode is 50nm.

[0059] The preparation method of the storage unit of the above-mentioned resistance random access memory is:

[0060] Step 1, using a thermal oxidation method to grow a silicon dioxide isolation dielectric layer on the single crystal s...

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Abstract

The invention discloses a method for preparing a storage unit of a resistance random access memory. Step 1, forming a conductive film on the surface of a substrate as a first electrode; Step 2, preparing an argon plasma bombardment treatment on the surface of the first electrode obtained in step 1 The ZnO thin film is used as the intermediate layer; step 3, the conductive film is prepared on the surface of the intermediate layer obtained in step 2 as the second electrode; step 4, an isolated device is prepared on the basis of the structure obtained in step 3, and the resistive random access memory is obtained storage unit. The invention provides a method for preparing a storage unit of a resistive random access memory, which performs argon plasma bombardment treatment on a ZnO thin film as an intermediate medium layer, thereby greatly improving the flatness of the surface of the ZnO thin film; ZnO treated with the argon plasma bombardment The memory prepared by the thin film as the intermediate layer initially exhibits a low-resistance state, and the erasing and writing of all devices does not require an electrical formation process, and the erasing and writing voltage is relatively small.

Description

technical field [0001] The invention relates to the technical field of non-volatile memory, in particular to a method for preparing a storage unit of a resistance random access memory and a product thereof. Background technique [0002] The current rapid development of digital high-tech has put forward higher requirements for the performance of existing information storage products, such as: high speed, high density, long life, low cost and low power consumption, etc. technical deficiencies. One of the weaknesses of dynamic and static memory is its volatility: information is lost in the event of a power outage, and it is susceptible to interference from electromagnetic radiation. Flash memory has technical obstacles such as slow read and write speeds and low recording density. Therefore, breakthroughs in storage materials and technologies are urgently needed to develop new-generation memory technologies. [0003] In 2000, the University of Houston in the United States dis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 诸葛飞伏兵曹鸿涛
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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