A preparation method and product of a storage unit of a resistive random access memory

A technology of random access memory and storage unit, applied in the direction of electrical components, etc., can solve the problems of restricting the industrial production of RRAM, unfavorable practical application of storage devices, unfavorable RRAM compatibility, etc., and achieve the effect of eliminating the formation process of electricity, increasing the concentration, and reducing the initial resistance
CN105098065BActive Publication Date: 2018-04-20NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Publication Date
2018-04-20

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Abstract

The invention discloses a method for preparing a storage unit of a resistance random access memory. Step 1, forming a conductive film on the surface of a substrate as a first electrode; Step 2, preparing an argon plasma bombardment treatment on the surface of the first electrode obtained in step 1 The ZnO thin film is used as the intermediate layer; step 3, the conductive film is prepared on the surface of the intermediate layer obtained in step 2 as the second electrode; step 4, an isolated device is prepared on the basis of the structure obtained in step 3, and the resistive random access memory is obtained storage unit. The invention provides a method for preparing a storage unit of a resistive random access memory, which performs argon plasma bombardment treatment on a ZnO thin film as an intermediate medium layer, thereby greatly improving the flatness of the surface of the ZnO thin film; ZnO treated with the argon plasma bombardment The memory prepared by the thin film as the intermediate layer initially exhibits a low-resistance state, and the erasing and writing of all devices does not require an electrical formation process, and the erasing and writing voltage is relatively small.
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Description

technical field

[0001] The invention relates to the technical field of non-volatile memory, in particular to a method for preparing a storage unit of a resistance random access memory and a product thereof. Background technique

[0002] The current rapid development of digital high-tech has put forward higher requirements for the performance of existing information storage products, such as: high speed, high density, long life, low cost and low power consumption, etc. technical deficiencies. One of the weaknesses of dynamic and static memory is its volatility: information is lost in the event of a power outage, and it is susceptible to interference from electromagnetic radiation. Flash memory has technical obstacles such as slow read and write speeds and low recording density. Therefore, breakthroughs in storage materials and technologies are urgently needed to develop new-generation memory technologies.

[0003] In 2000, the University of Houston in the United States dis...

Claims

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