32results about How to "Lower initial resistance" patented technology

Provided is a separator for non-aqueous batteries not only having shutdown property but also achieving both higher output and short-circuit resistance. The separator comprising a laminate comprising: a low melting-point polymer fiber layer (A) having a melting point of 100 to 200° C., the low melting-point polymer fiber layer (A) comprising nanofibers having a fiber diameter of 1000 nm or smaller and formed from the low melting-point polymer; and a heat-resistant polymer fiber layer (B) positioned on the low melting-point polymer fiber layer (A) and comprising a high melting-point polymer having a melting point over 200° C. or a heat infusible polymer, the heat-resistant polymer fiber layer (B) comprising a mixture of nanofibers having a fiber diameter of 1000 nm or smaller and non-nanofibers having a fiber diameter over 1000 nm and both formed from heat-resistant polymer.

A shear strain type pressure sensor comprises a shell. A magnetic field generating device in the shell comprises two magnetic poles which are opposite in magnetism and correspond to each other oppositely. A shear plate is arranged in the gap between the two magnetic poles, a rubber sheet is fixed on one side of the shear plate and in full contact with the end face of the first magnetic pole in the two magnetic poles, and a first electrode is fixed on the other side of the shear plate and fixedly provided with a magnetorheological elastomer. A second electrode is fixed on the other side of the magnetorheological elastomer, the second electrode is fixedly connected with the end face of the second magnetic pole in the two magnetic poles, the first electrode and the second electrode are electrically connected with a signal conditioning module, one end of the shear plate upwards extends to penetrate through an S-shaped force measuring piece and then extends out of the upper end face of the shell, a supporting plate used for supporting the S-shaped force measuring piece is fixed in the shell, a stop piece is arranged on the shear plate, and the lower end face of the stop piece is in contact with the upper end face of the S-shaped force measuring piece. The shear strain type pressure sensor is high in resolution, high in sensitivity, and large in force testing range.

The invention discloses a preparation method for a memory cell of a resistive random access memory. The method includes: step 1, a conductive film as a first electrode is formed on the surface of a substrate; step 2, a ZnO film through argon plasma bombardment treatment as an intermediate layer is prepared on the surface of the first electrode obtained by the step 1; step 3, a conductive film as a second electrode is prepared on the surface of the intermediate layer obtained by the step 2; and step 4, an isolation device is prepared on the structural basis obtained by the step 3, and the memory cell of the resistive random access memory is obtained. According to the preparation method for the memory cell of the resistive random access memory, the argon plasma bombardment treatment of the ZnO film as the intermediate medium layer is performed so that the flatness of the surface of the ZnO film is greatly improved; and the ZnO film through argon plasma bombardment treatment serves as the memory prepared by the intermediate layer, the initial presentation is the low-resistance state, the wiping of all the devices does not need the process of electric forming, and the wiping voltage is low.

The invention provides a resistive random access memory and a manufacturing method thereof. The resistive random access memory comprises a semiconductor substrate, a first electrode, a first intercalation layer, a resistive random access layer, a second intercalation layer and a second electrode, the first electrode covers a part of the semiconductor substrate, the first intercalation layer coversthe first electrode, a resistance of the first intercalation layer is smaller than that of the resistive random access layer, the resistive random access layer covers the first intercalation layer, the second intercalation layer covers the resistive random access layer, oxygen atoms exist in the second intercalation layer and the resistive random access layer, and the second electrode covers thesecond intercalation layer. Due to the fact that oxygen atoms exist in the second intercalation layer and the resistive random access layer, after the resistive random access memory applies a positivevoltage, the oxygen atoms in the resistive random access layer and the second intercalation layer can move towards the second electrode, the concentration of oxygen vacancies can be increased, generation of oxygen vacancy conductive filaments is facilitated, and the consistency of the resistive random access memory is further improved.

The invention provides conductive particles, a conductive material, and a contact structure. In conductive particles that are included between electrodes and electrically connect the electrodes, the conductive particles include an insulator core, and a conductive layer or a raised conductive layer provided on the surface of the core. In a graph which is drawn using the deformation rate of the conductive particles as the x-axis and the elastic work ratio determined by formula 1 as the y-axis after the conductive particles are compressed at 25 DEG C by a micropressure tester, an oxide plating layer is damaged by electrode layer or conductive layer with protrusions within a range of the deformation rate of the conductive particles between an interval (a) in which a certain elastic power ratiois maintained after the first discontinuous point and an interval (b) in which a certain x elastic power ratio is maintained after the second discontinuous point. [Formula 1] nIT = Welastic/Wtotal *100, where n is an integer greater than or equal to 1.

The invention discloses a flexible sensor and a preparation method thereof. The flexible sensor is featured in that the protonic acid doping peak in the infrared Fourier spectra of a protonic-acid-doped polyaniline sheet is 1240cm<-1>, two ends of the protonic-acid-doped polyaniline sheet are provided with electrodes, and the protonic-acid-doped polyaniline sheet is coated with a flexible insulating material. The method comprises steps of firstly uniformly mixing aniline and protonic acid to obtain a transparent solution, placing an anode and a graphite cathode in the transparent mixed solution for electrodeposition to obtain protonic-acid-doped polyaniline coating on the anode, then dying the protonic-acid-doped polyaniline, arranging electrodes at two ends of the protonic-acid-doped polyaniline to obtain electrode-contained protonic-acid-doped polyaniline coating on the anode, separating the electrode-contained protonic-acid-doped polyaniline from the anode, coating the flexible insulating material on the surface of the protonic-acid-doped polyaniline provided with the electrodes at two ends, and dying the coated protonic-acid-doped polyaniline to obtain a target product. The flexible sensor has a high resistance change rate in stretching, can be widely used in working conditions of folding, distorting, stretching and the like, and is particularly suitable for the field of wearable equipment.

The invention provides a preparation method of a bipolar gating memristor and a bipolar gating memristor. The preparation method comprises the following steps of: preparing a lower electrode; depositing a resistive material layer on the lower electrode; and depositing an upper electrode on the resistive material layer, specifically, depositing the upper electrode by adopting a magnetron sputtering mode, controlling sputtering power to control metal particles of the upper electrode to have proper kinetic energy, and controlling the vacuum degree of an area where the upper electrode and the resistive material layer are located, so as to enable the upper electrode and the resistive material layer to spontaneously generate oxidation-reduction reaction in the deposition process of the upper electrode so as to form a built-in bipolar gating layer, and further depositing the upper electrode on the built-in bipolar gating layer, or selecting a material with the activity higher than that of metal elements of the resistive material layer as a metal material of the upper electrode, so as to make the upper electrode and the resistive material layer spontaneously generate oxidation-reduction reaction in the deposition process of the upper electrode, so as to form a built-in bipolar gating layer and further depositing the upper electrode on the built-in bipolar gating layer. According to the preparation method of the bipolar gating memristor and the bipolar gating memristor of the invention, the performance of the bipolar gating device is improved.

The present embodiment relates to a positive electrode active material for a lithium secondary battery, a method for preparing the same, and a lithium secondary battery comprising the same. According to one embodiment, there may be provided a lithium secondary battery positive electrode active material comprising: lithium metal oxide particles; and a coating layer on at least a portion of a surface of the lithium metal oxide particles, the coating layer including B, LiOH, Li2CO3, and Li2SO4.