The invention provides a preparation method of a bipolar gating
memristor and a bipolar gating
memristor. The preparation method comprises the following steps of: preparing a lower
electrode; depositing a resistive material layer on the lower
electrode; and depositing an upper
electrode on the resistive material layer, specifically, depositing the upper electrode by adopting a magnetron
sputtering mode, controlling
sputtering power to control
metal particles of the upper electrode to have proper
kinetic energy, and controlling the vacuum degree of an area where the upper electrode and the resistive material layer are located, so as to enable the upper electrode and the resistive material layer to spontaneously generate oxidation-reduction reaction in the
deposition process of the upper electrode so as to form a built-in bipolar gating layer, and further depositing the upper electrode on the built-in bipolar gating layer, or selecting a material with the activity higher than that of
metal elements of the resistive material layer as a
metal material of the upper electrode, so as to make the upper electrode and the resistive material layer spontaneously generate oxidation-reduction reaction in the
deposition process of the upper electrode, so as to form a built-in bipolar gating layer and further depositing the upper electrode on the built-in bipolar gating layer. According to the preparation method of the bipolar gating
memristor and the bipolar gating memristor of the invention, the performance of the bipolar gating device is improved.