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32results about How to "Lower initial resistance" patented technology

Separator for non-aqueous batteries, non-aqueous battery using same, and production method for separator for non-aqueous batteries

Provided is a separator for non-aqueous batteries not only having shutdown property but also achieving both higher output and short-circuit resistance. The separator comprising a laminate comprising: a low melting-point polymer fiber layer (A) having a melting point of 100 to 200° C., the low melting-point polymer fiber layer (A) comprising nanofibers having a fiber diameter of 1000 nm or smaller and formed from the low melting-point polymer; and a heat-resistant polymer fiber layer (B) positioned on the low melting-point polymer fiber layer (A) and comprising a high melting-point polymer having a melting point over 200° C. or a heat infusible polymer, the heat-resistant polymer fiber layer (B) comprising a mixture of nanofibers having a fiber diameter of 1000 nm or smaller and non-nanofibers having a fiber diameter over 1000 nm and both formed from heat-resistant polymer.
Owner:KURARAY CO LTD

Piezoelectric crystal gas sensor with two working modes

The invention discloses a piezoelectric crystal gas sensor with two working modes. The piezoelectric crystal gas sensor comprises a quartz wafer and electrodes, wherein the electrodes include a first metal electrode, a second metal electrode and a third metal electrode, the first metal electrode and the second metal electrode are arranged on the front surface of the quartz wafer and form a staggered annular interdigital electrode structure, the third metal electrode is arranged on the rear surface of the quartz wafer, and the third metal electrode, the first metal electrode and the second metal electrode form an up-down unsymmetrical quartz crystal microbalance electrode structure. By utilizing a three-electrode structure, a mass sensitive piezoelectric resonant frequency measurement method and a resistance sensitive gas measurement manner can be combined; and the first metal electrode and the second metal electrode form the staggered annular interdigital electrode structure, so that the normal working of a piezoelectric resonant body is guaranteed, the initial resistance value of a gas sensitive material in an impedance test is decreased, and the signal to noise ratio in the impedance test is increased.
Owner:GENERAL ENG RES INST CHINA ACAD OF ENG PHYSICS

Shear strain type pressure sensor

ActiveCN104034452AShear strain sensitiveIncreased force rangeForce measurementElastomerMagnetic current
A shear strain type pressure sensor comprises a shell. A magnetic field generating device in the shell comprises two magnetic poles which are opposite in magnetism and correspond to each other oppositely. A shear plate is arranged in the gap between the two magnetic poles, a rubber sheet is fixed on one side of the shear plate and in full contact with the end face of the first magnetic pole in the two magnetic poles, and a first electrode is fixed on the other side of the shear plate and fixedly provided with a magnetorheological elastomer. A second electrode is fixed on the other side of the magnetorheological elastomer, the second electrode is fixedly connected with the end face of the second magnetic pole in the two magnetic poles, the first electrode and the second electrode are electrically connected with a signal conditioning module, one end of the shear plate upwards extends to penetrate through an S-shaped force measuring piece and then extends out of the upper end face of the shell, a supporting plate used for supporting the S-shaped force measuring piece is fixed in the shell, a stop piece is arranged on the shear plate, and the lower end face of the stop piece is in contact with the upper end face of the S-shaped force measuring piece. The shear strain type pressure sensor is high in resolution, high in sensitivity, and large in force testing range.
Owner:CHONGQING MATERIALS RES INST

High-stability PTC thermosensitive assembly capable of improving maintenance current

The invention relates to a high-stability PTC thermosensitive assembly capable of improving maintenance current. An assembly structure with a positive temperature effect comprises a built-in core material, an insulating material frame coating the built-in core material, an insulating semi-cured resin material coating the insulating material frame and two surfaces of a PTC electrode foil, and an electrode foil covering the outmost surface end of the semi-cured resin material, wherein the built-in core material is formed by stacking multiple layers of PTC core materials in parallel; each layer of PTC core material comprises an upper electrode foil, a lower electrode foil and a material layer which is folded and clamped between the upper electrode foil and the lower electrode foil and has a resistance positive temperature coefficient effect; the electrode foil on the outmost surface end is connected with an electrode foil on the surface end of the built-in core material through a blind hole; and a conductive metal pin is connected to the electrode foil on the outmost surface end. According to the high-stability PTC thermosensitive assembly, the resistance of the PTC thermosensitive element is reduced by stacking the PTC core materials in parallel to improve the maintenance current; and air and moisture are isolated by using the insulating material frame and expansion of the PTC core materials is limited, so that the stability is improved.
Owner:SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO LTD

Preparation method for memory cell of resistive random access memory and product thereof

The invention discloses a preparation method for a memory cell of a resistive random access memory. The method includes: step 1, a conductive film as a first electrode is formed on the surface of a substrate; step 2, a ZnO film through argon plasma bombardment treatment as an intermediate layer is prepared on the surface of the first electrode obtained by the step 1; step 3, a conductive film as a second electrode is prepared on the surface of the intermediate layer obtained by the step 2; and step 4, an isolation device is prepared on the structural basis obtained by the step 3, and the memory cell of the resistive random access memory is obtained. According to the preparation method for the memory cell of the resistive random access memory, the argon plasma bombardment treatment of the ZnO film as the intermediate medium layer is performed so that the flatness of the surface of the ZnO film is greatly improved; and the ZnO film through argon plasma bombardment treatment serves as the memory prepared by the intermediate layer, the initial presentation is the low-resistance state, the wiping of all the devices does not need the process of electric forming, and the wiping voltage is low.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI

Resistive random access memory and manufacturing method thereof

The invention provides a resistive random access memory and a manufacturing method thereof. The resistive random access memory comprises a semiconductor substrate, a first electrode, a first intercalation layer, a resistive random access layer, a second intercalation layer and a second electrode, the first electrode covers a part of the semiconductor substrate, the first intercalation layer coversthe first electrode, a resistance of the first intercalation layer is smaller than that of the resistive random access layer, the resistive random access layer covers the first intercalation layer, the second intercalation layer covers the resistive random access layer, oxygen atoms exist in the second intercalation layer and the resistive random access layer, and the second electrode covers thesecond intercalation layer. Due to the fact that oxygen atoms exist in the second intercalation layer and the resistive random access layer, after the resistive random access memory applies a positivevoltage, the oxygen atoms in the resistive random access layer and the second intercalation layer can move towards the second electrode, the concentration of oxygen vacancies can be increased, generation of oxygen vacancy conductive filaments is facilitated, and the consistency of the resistive random access memory is further improved.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Flexible sensor and preparation method thereof

The invention discloses a flexible sensor and a preparation method thereof. The flexible sensor is featured in that the protonic acid doping peak in the infrared Fourier spectra of a protonic-acid-doped polyaniline sheet is 1240cm<-1>, two ends of the protonic-acid-doped polyaniline sheet are provided with electrodes, and the protonic-acid-doped polyaniline sheet is coated with a flexible insulating material. The method comprises steps of firstly uniformly mixing aniline and protonic acid to obtain a transparent solution, placing an anode and a graphite cathode in the transparent mixed solution for electrodeposition to obtain protonic-acid-doped polyaniline coating on the anode, then dying the protonic-acid-doped polyaniline, arranging electrodes at two ends of the protonic-acid-doped polyaniline to obtain electrode-contained protonic-acid-doped polyaniline coating on the anode, separating the electrode-contained protonic-acid-doped polyaniline from the anode, coating the flexible insulating material on the surface of the protonic-acid-doped polyaniline provided with the electrodes at two ends, and dying the coated protonic-acid-doped polyaniline to obtain a target product. The flexible sensor has a high resistance change rate in stretching, can be widely used in working conditions of folding, distorting, stretching and the like, and is particularly suitable for the field of wearable equipment.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI

A semiconductor resistive gas sensor and its preparation method

The invention discloses a semiconductor resistance gas sensor and a preparation method thereof. The gas sensor includes an insulating substrate, a signal electrode and a gas-sensing layer; the gas-sensing layer is composed of semiconductor nanocrystalline composite material and graphene. The colloidal method is used to synthesize the semiconductor nanocrystal solution, which can directly form a film at room temperature without high temperature treatment, consumes less energy, and does not cause the agglomeration of nanoparticles, and can maximize the advantages of large specific surface area of ​​nanoparticles. It is conducive to gas adsorption, improves the sensitivity of the sensor, and enables the sensor to detect low-concentration target gas at a lower working temperature or even at room temperature. The preparation method is simple, and it is easy to realize large-scale batch production.
Owner:HUAZHONG UNIV OF SCI & TECH

A high stability ptc thermal component

The invention relates to a low-resistance, high-stability PTC heat-sensitive element, which includes components with resistance positive temperature effect and conductive metal pins. Among them, the structure of the positive temperature effect component is a PTC core material composed of an upper electrode foil, a lower electrode foil, and a stack of material layers with a positive temperature coefficient of resistance effect sandwiched between the upper and lower electrode foils, and is wrapped around the core material. The insulating material frame, the insulating semi-cured resin material covering both surfaces of the insulating material frame and the PTC electrode foil, and the terminal electrode foil covering the outermost surface of the semi-cured resin material, and the outermost terminal electrode foil is connected to the PTC core through the blind hole The electrode foil on the surface of the material is connected; the conductive metal pin is connected to the electrode foil on the outermost surface. The high-stability PTC thermosensitive element of the present invention has low resistance characteristics and high stability, and can meet complex charging and discharging applications of batteries.
Owner:SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO LTD

Preparation method of bipolar gating memristor and bipolar gating memristor

The invention provides a preparation method of a bipolar gating memristor and a bipolar gating memristor. The preparation method comprises the following steps of: preparing a lower electrode; depositing a resistive material layer on the lower electrode; and depositing an upper electrode on the resistive material layer, specifically, depositing the upper electrode by adopting a magnetron sputtering mode, controlling sputtering power to control metal particles of the upper electrode to have proper kinetic energy, and controlling the vacuum degree of an area where the upper electrode and the resistive material layer are located, so as to enable the upper electrode and the resistive material layer to spontaneously generate oxidation-reduction reaction in the deposition process of the upper electrode so as to form a built-in bipolar gating layer, and further depositing the upper electrode on the built-in bipolar gating layer, or selecting a material with the activity higher than that of metal elements of the resistive material layer as a metal material of the upper electrode, so as to make the upper electrode and the resistive material layer spontaneously generate oxidation-reduction reaction in the deposition process of the upper electrode, so as to form a built-in bipolar gating layer and further depositing the upper electrode on the built-in bipolar gating layer. According to the preparation method of the bipolar gating memristor and the bipolar gating memristor of the invention, the performance of the bipolar gating device is improved.
Owner:HUAZHONG UNIV OF SCI & TECH

A piezoelectric crystal gas sensor with dual working modes

The invention discloses a piezoelectric crystal gas sensor with two working modes. The piezoelectric crystal gas sensor comprises a quartz wafer and electrodes, wherein the electrodes include a first metal electrode, a second metal electrode and a third metal electrode, the first metal electrode and the second metal electrode are arranged on the front surface of the quartz wafer and form a staggered annular interdigital electrode structure, the third metal electrode is arranged on the rear surface of the quartz wafer, and the third metal electrode, the first metal electrode and the second metal electrode form an up-down unsymmetrical quartz crystal microbalance electrode structure. By utilizing a three-electrode structure, a mass sensitive piezoelectric resonant frequency measurement method and a resistance sensitive gas measurement manner can be combined; and the first metal electrode and the second metal electrode form the staggered annular interdigital electrode structure, so that the normal working of a piezoelectric resonant body is guaranteed, the initial resistance value of a gas sensitive material in an impedance test is decreased, and the signal to noise ratio in the impedance test is increased.
Owner:GENERAL ENG RES INST CHINA ACAD OF ENG PHYSICS

Shear Strain Pressure Sensor

ActiveCN104034452BShear strain sensitiveIncreased force rangeForce measurementElastomerMagnetic current
A shear strain type pressure sensor, comprising a housing, the magnetic field generating device in the housing has two opposite magnetic poles and corresponding to each other, a shearing plate is arranged in the space between the two magnetic poles, and the shearing plate One side of the shear plate is fixed with a rubber sheet, which is in full contact with the magnetic end surface of the first magnetic pole of the two magnetic poles, and the other side of the shear plate is fixed with a first electrode, and the first electrode is fixed with a magnetorheological Elastic body, the other side of the magnetorheological elastic body is fixed with a second electrode, the second electrode is fixed to the magnetic pole surface of the second magnetic pole in the two magnetic poles, the first electrode, the second electrode and a signal conditioning module Electrically connected, one end of the shearing plate extends upwards through an S-shaped force-measuring member and then protrudes from the upper surface of the housing, and the housing is fixed with a support plate for supporting the S-shaped force-measuring member. A stopper is arranged on the plate, and the lower end surface of the stopper is in contact with the upper end surface of the S-shaped force-measuring piece. It has high resolution, high sensitivity and large force range.
Owner:CHONGQING MATERIALS RES INST

Preparation method of tin disulfide/graphene/tin dioxide ternary composite gas-sensing material for nitrogen dioxide gas sensor

The invention relates to a preparation method of a tin disulfide / graphene / tin dioxide ternary composite gas sensing material for a nitrogen dioxide gas-sensitive sensor, relates to a gas sensor material and a preparation method thereof, belongs to the technical field of gas detection, and aims to solve the problems of low sensitivity, high detection limit, poor selectivity and high working temperature of existing semiconductor materials for NO2 gas. The method is as follows: 1. preparation of SnS2 nanosheets; 2. compounding of graphene and SnO2 quantum wires; 3. preparation of a SnS2 / graphene / SnO2 composite sensing film, to be more specific, firstly coating a ceramic piece with a gold interdigitated electrode with an ethanol solution of graphene / SnO2 quantum wires, then coating the surfaceof the ethanol solution of the graphene / SnO2 quantum wires with an ethanol solution of SnS2 for reacting, and aging to obtain the material. The method further integrates application ideas of two two-dimensional materials in the field of NO2 gas sensors, and constructs the SnS2 / graphene / SnO2 ternary composite material to realize a high sensitivity and low detection limit gas sensitive response forthe NO2 gas at low temperature.
Owner:HARBIN INST OF TECH

Flexible sensor and its preparation method

The invention discloses a flexible sensor and a preparation method thereof. The flexible sensor is featured in that the protonic acid doping peak in the infrared Fourier spectra of a protonic-acid-doped polyaniline sheet is 1240cm<-1>, two ends of the protonic-acid-doped polyaniline sheet are provided with electrodes, and the protonic-acid-doped polyaniline sheet is coated with a flexible insulating material. The method comprises steps of firstly uniformly mixing aniline and protonic acid to obtain a transparent solution, placing an anode and a graphite cathode in the transparent mixed solution for electrodeposition to obtain protonic-acid-doped polyaniline coating on the anode, then dying the protonic-acid-doped polyaniline, arranging electrodes at two ends of the protonic-acid-doped polyaniline to obtain electrode-contained protonic-acid-doped polyaniline coating on the anode, separating the electrode-contained protonic-acid-doped polyaniline from the anode, coating the flexible insulating material on the surface of the protonic-acid-doped polyaniline provided with the electrodes at two ends, and dying the coated protonic-acid-doped polyaniline to obtain a target product. The flexible sensor has a high resistance change rate in stretching, can be widely used in working conditions of folding, distorting, stretching and the like, and is particularly suitable for the field of wearable equipment.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI

Conductive particles, conductive materials, and contact structures

The present invention provides a conductive particle, a conductive material, and a contact structure. The conductive particle is characterized in that: in the conductive particle electrically connected to the electrode by being contained between the electrodes, the conductive particle includes an insulator core, and is equipped with an insulator core. The conductive layer or the conductive layer with protrusions on the surface of the above-mentioned core, after compressing the above-mentioned conductive particles at 25° C. using a micro-pressure tester, the deformation rate of the above-mentioned conductive particles is used as the x-axis and is expressed by the following formula 1 In the graph plotted with the determined elastic work ratio as the y-axis, the interval (a) where a certain elastic work ratio is maintained after the first discontinuity point and the interval (b) where a constant x elastic work ratio is maintained after the second discontinuity point ) within the deformation rate range of the conductive particles, the above-mentioned oxide plating layer is destroyed by the above-mentioned electrode layer or the above-mentioned conductive layer with protrusions [Formula 1] nIT=W elastic / W total *100.
Owner:DUK SAN NEOLUX

A kind of in-tube growth doped state or filled mesoporous polyaniline gas sensor and its preparation method

ActiveCN109115839BImprove performanceIncreased specific surface contact areaMaterial resistanceElectrical resistance and conductanceAniline
The invention discloses a sensor with doped-state mesoporous polyaniline gas growing in a tube or a filled mesoporous polyaniline gas sensor, and preparation methods thereof. According to the presentinvention, a tube having any sizes and made of any materials is used as a matrix, doped state polyaniline grows in the tube or the tube is filled with mesoporous polyaniline, and electrodes and electric-conduction lead-out ends are prepared to form the sensor; the preparation method comprises: modifying the inner wall of a tube, introducing an initiator and a doped-state aniline solution, controlling the film thickness according to the amounts and the concentrations of the doped-state aniline and the initiator, or directly filling the tube with mesoporous polyaniline, producing electrodes on both ends of the tube, and winding the outer wall electrode with a metal fine wire to connect a resistance detecting device; when the concentration of the to-be-detected gas is extremely low and the resistance change is not obvious after the contact with polyaniline, the plurality of the sensors can be connected in parallel to form the cluster sensor so as to substantially reduce the initial resistance and improve the sensitivity; and the sensor has advantages of high detection sensitivity to all concentration gases, extremely short response time, fast recovery, good stability, convenient use,convenient carrying high commercial prospect and the like.
Owner:EAST CHINA NORMAL UNIV

Conductive particle, method for producing same, conductive material, contact structure, electrical component, and electronic component

Provided are: conductive particles which are suitable for maintaining electrical contact due to little increase in initial electrical contact resistance and resistance after 85 DEG C / 85% reliability evaluation; a method for producing the conductive particles; a conductive material; a contact structure; and electrical and electronic components. The conductive particles are used in anisotropic conductive materials such as anisotropic conductive films and anisotropic conductive pastes, and each conductive particle has an insulator core and a conductive layer on the surface of the core. The present invention is characterized in that: the conductive layer is provided with protrusions, and the protrusions and the conductive layer are an alloy comprising a first element constituting the base andat least one or more second elements or a plurality of second elements selected from the group consisting of P, B, Cu, Au, Ag, W, Mo, Pd, Co, and Pt; the second element or at least one of the plurality of second elements has a first concentration on the inner side of the conductive layer and a second concentration on the outer side of the gold plating side, and the second concentration is greaterthan the first concentration.
Owner:DUK SAN NEOLUX

Cathode active material for lithium secondary battery, preparation method therefor, and lithium secondary battery comprising same

The present invention relates to a cathode active material for a lithium secondary battery, a preparation method therefor, and a lithium secondary battery comprising same. The cathode active material comprises secondary particles obtained by granulating at least one primary particle and shown by the chemical formula 1, and comprises metal oxide particles, which have a nano-sized average diameter (D50) and are located inside the secondary particles. The chemical formula 1 is Lia[NixCoyMnz]tM<1-t>O<2-p>Xp, and in the chemical formula 1, the definition of each substituent is the same as that in the detailed description.
Owner:浦项控股股份有限公司 +2

Cathode active material, method for preparing same, and lithium secondary battery comprising same

PendingCN114846649AIncrease capacityExcellent high temperature life characteristicsPositive electrodesLi-accumulatorsChemistryElectrical battery
The present embodiment relates to a positive electrode active material for a lithium secondary battery, a method for preparing the same, and a lithium secondary battery comprising the same. According to one embodiment, there may be provided a lithium secondary battery positive electrode active material comprising: lithium metal oxide particles; and a coating layer on at least a portion of a surface of the lithium metal oxide particles, the coating layer including B, LiOH, Li2CO3, and Li2SO4.
Owner:POHANG IRON & STEEL CO LTD +1
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