Resistive random access memory and manufacturing method thereof

A technology of resistive variable memory and manufacturing method, which is applied in the direction of electrical components, etc., can solve the problems of randomness in formation and fracture, and affect the working stability and reliability of resistive variable memory, so as to improve the working stability and reliability, increase Concentration, Consistency-enhancing Effects
CN112420923APending Publication Date: 2021-02-26SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI HUALI MICROELECTRONICS CORP
Publication Date
2021-02-26

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Abstract

The invention provides a resistive random access memory and a manufacturing method thereof. The resistive random access memory comprises a semiconductor substrate, a first electrode, a first intercalation layer, a resistive random access layer, a second intercalation layer and a second electrode, the first electrode covers a part of the semiconductor substrate, the first intercalation layer coversthe first electrode, a resistance of the first intercalation layer is smaller than that of the resistive random access layer, the resistive random access layer covers the first intercalation layer, the second intercalation layer covers the resistive random access layer, oxygen atoms exist in the second intercalation layer and the resistive random access layer, and the second electrode covers thesecond intercalation layer. Due to the fact that oxygen atoms exist in the second intercalation layer and the resistive random access layer, after the resistive random access memory applies a positivevoltage, the oxygen atoms in the resistive random access layer and the second intercalation layer can move towards the second electrode, the concentration of oxygen vacancies can be increased, generation of oxygen vacancy conductive filaments is facilitated, and the consistency of the resistive random access memory is further improved.
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Description

technical field

[0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a resistive variable memory and a manufacturing method thereof. Background technique

[0002] With the development of semiconductor technology, the market demand for non-volatile memory is increasingly shifting towards large capacity, low power consumption, high density and low cost. Resistive Random Access Memory (RRAM) is a research hotspot of next-generation memory, has strong application potential, and is considered to be the memory with the most commercial value.

[0003] In the existing resistive variable memory, it generally includes: a semiconductor substrate, a bottom electrode, a resistive layer and a top electrode, the bottom electrode covers the semiconductor substrate, the resistive layer covers the bottom electrode, the A top electrode covers the resistive switch layer. Wherein, the resistive switch layer has oxygen atoms. In the resi...

Claims

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