339 results about "Conductive filament" patented technology

The invention discloses an angle-adjustable spine blood coagulation electrode which comprises a tool bit assembly, a fixed body and a movable wire clamp. The tool bit assembly comprises an insulating rod, an inner tube and an outer tube, two electrodes which are insulated and separated are arranged at one end of the insulating rod, each electrode is connected with a conductive wire, and each conductive wire penetrates through the other end of the insulating rod and is connected with a cable; a first cavity and a second cavity which are communicated are formed in the fixing body, a steel pipe chuck and a screw cap are fixed to the other end of the first cavity, and a first handle and a second handle are arranged outside the fixing body. A reset spring is arranged in the first cavity; the movable wire clamp comprises a small-diameter section and a large-diameter section, and a third handle is arranged outside the movable wire clamp. The scalpel head can axially stretch out and draw back and circumferentially rotate to adjust the angle of the scalpel head through a single hand, the operation range is small, the scalpel head rotates more gently, use is more convenient, and the requirement for multi-angle blood coagulation in a spinal operation can be met.

A back-contact battery cell and battery with a stacked-gate structure. The back-contact battery cell with a stacked-gate structure comprises a battery cell, at least one positive electrode and at least one negative electrode, wherein the positive electrode and the negative electrode are distributed on a back face of the battery cell in a staggered manner; a stacked-gate structure is provided on the positive electrode and the negative electrode; and the stacked-gate structure comprises a current collection layer and electrically conductive wires, the current collection layer being arranged on the positive electrode and the negative electrode, and the electrically conductive wires covering the current collection layer in a stacked manner. There is no gate line on the back face of the battery cell, the stacked-gate structure is closely arranged to replace gate lines to perform current collection and transmission, and the thickness of the current collection layer is reduced; and a photo-generated current on a surface of the battery cell is collected by the current collection layer and is directly transmitted to the electrically conductive wires, thereby eliminating the transmission path of the current on auxiliary gates.

The invention relates to the technical field of sensors, and provides a flexible pressure sensor and a pressure-sensitive fabric, the flexible pressure sensor comprises the pressure-sensitive fabric, the pressure-sensitive fabric is provided with a pressure detection position for detecting a pressure signal, and the pressure-sensitive fabric is formed by weaving a composite conductive filament and a first non-conductive filament, the composite conductive wire is obtained by doubling a conductive wire and a second non-conductive wire, and the conductive wire is prepared from a conductive material and a base material; the processor is connected with the pressure detection positions and used for processing the pressure signals of the pressure detection positions and outputting pressure distribution information on the pressure-sensitive fabric according to the pressure signals corresponding to the pressure detection positions. According to the pressure sensor provided by the embodiment of the invention, the pressure-sensitive fabric has the characteristics of bending resistance, impact resistance and electric conductivity which is not easily influenced by the environment, and the consistency of the pressure-sensitive fabric is improved, so that the precision of the pressure sensor in various environments is improved.

The present disclosure provides a resistive random access memory and a memory device. The resistive random access memory comprises a first electrode, a second electrode, and a resistive layer between the first electrode and the second electrode, wherein a first interface region and a second interface region are provided on the side of at least one of the first electrode and the second electrode that is close to the resistive layer, and the oxygen binding capability of an electrode material located in the first interface region is less than the oxygen binding capability of an electrode material located in the second interface region. Conductive filaments in the resistive random access memory are more easily formed at a second interface region, so that the formation positions of the conductive filaments are more concentrated and stable, and the consistency of a device can be enhanced, thereby enhancing the reliability of the device.

The invention belongs to the related field of artificial nerve morphology, and discloses a compact artificial neuron based on TaOx multifunctional devices, the artificial neuron is composed of two TaOx multifunctional devices with the same structure, and the two TaOx multifunctional devices are connected in series back to back; wherein when voltage in a first direction is applied to the TaOx multifunctional device, the TaOx multifunctional device shows a charge trapping and releasing mechanism and is used for providing simulated volatile characteristics; and when the voltage in the second direction is applied, a conductive wire mechanism is shown and is used for providing digital volatile characteristics. The invention further discloses a structural design of the TaOx multifunctional device. According to the invention, the required neuron function can be realized by only relying on the back-to-back connection of two same TaOx multifunctional devices without additionally introducing capacitors, resistors and other devices, the circuit structure is compact and convenient to process and manufacture, and the problems of low integration level, high process difficulty and the like of the existing artificial neuron are effectively improved. Therefore, large-scale integration of the artificial neural network is facilitated.

The invention discloses a preparation method of a multifunctional textile-based sports sweat monitoring intelligent hair band, and relates to the technical field of intelligent wearing. According to the hair band, water-absorbing textile fibers are adopted as a sweat collecting part, the surface of the sweat collecting part is coated with a conductive material to form a flexible electrode sensing layer, and meanwhile, a selective recognition material is modified to detect sweat components such as glucose, the pH value, Na < + > and K < + >. In addition, the textile-based temperature sensor is prepared based on a conductive filament or conductive coating composite technology. The hair band integrates the sweat sensor, the temperature sensor and the inertial sensor, can monitor the movement distance, the stride frequency, the step speed, the step number and the calorie consumption, fixes the inertial sensor in a bonding mode through liquid silica gel, and enables a collector to be close to the forehead through the combination of a hook-and-loop fastener and a hair band base body. Through material innovation, process optimization and system integration, unification of comfort, functionality and economical efficiency is achieved, and an efficient and universal technical scheme is provided for development of intelligent sports wearable equipment.

The invention discloses a twisted pair crimping system and a twisted pair crimping method. The twisted pair crimping system comprises a cable clamp used for clamping and fixing a twisted pair, and each conductor core of the twisted pair comprises a plurality of conductive wires twisted together; the moving device is used for moving the cable clamp and the twisted pair in the horizontal direction perpendicular to the axial direction of the twisted pair; and the artificial intelligence visual device is arranged at the detection station and can simulate human eyes to identify the actual number of the conductive wires of each conductor core of the twisted pair. And when the artificial intelligence visual device recognizes that the actual number of the conductive wires of the conductor core is not equal to the preset number, the artificial intelligence visual device judges that the twisted pair is unqualified. According to the invention, the artificial intelligence visual device can simulate human eyes to identify the actual number of the conductive wires in the conductor core of the twisted pair. Therefore, whether the quality of the twisted pair is qualified or not can be judged in advance according to the identified actual number of the conductive wires in the conductor core, and the quality of the twisted pair product is improved.

The invention discloses an aerospace electromagnetic shielding material based on modified polytetrafluoroethylene and a preparation method, and belongs to the technical field of nano materials. The method comprises the following steps: by taking polytetrafluoroethylene dispersion resin as a matrix, adding an extrusion aid and carbon nanotubes, stirring, curing, pre-pressing to form a green body, pushing and calendering to prepare a base film, and drying, stretching and mechanically splitting to form a microfiber layer; meanwhile, the polytetrafluoroethylene, the conductive filaments and the conductive reinforcing agent are twisted to prepare a twisted layer; the microfiber layer serves as an outer layer, the twisted layer serves as an inner layer, an electromagnetic shielding layer is woven, finally, the electromagnetic shielding layer is soaked in shielding liquid, dried and subjected to hot press forming, and the electromagnetic shielding material is prepared. According to the material, by constructing a continuous conductive network, excellent electromagnetic shielding effectiveness and low resistance are achieved, and the requirements for light weight, high conductivity and electromagnetic interference resistance in the aerospace field are met. The process parameters are strictly controlled, it is ensured that the fiber structure and the conductivity are optimized, and the method is suitable for electromagnetic protection in the extreme environment.

The present invention belongs to the technical field of microelectronic devices, and discloses a memristor for realizing the shaping and positioning of a conductive filament channel. The device includes an upper electrode, a functional layer and a lower electrode. The functional layer is based on the same metal oxide memristor material, wherein the oxygen content thereof changes in a gradient, and the oxygen content in the direction from the lower electrode to the upper electrode shows a trend of first increasing and then decreasing. Since the minimum value of the oxygen vacancy concentration appears in the middle of the functional layer, the fracture position of the conductive filament channel in the memristor can be positioned in the middle of the functional layer. The present invention improves the detailed structure and composition of the functional layer of the memristor device, and the obtained memristor can realize the shaping of the conductive filament channel morphology and the positioning of the conductive filament channel on-off position. Compared with the existing memristor structure, it is conducive to realizing low power consumption, high consistency, and multi-resistance state memristor performance, and can effectively solve the problems of the size of the conductive filament of the memristor device and the randomness of the formation position in the prior art.

Disclosed is a direct plug-in LED lamp bead with an internal resistor. An LED luminous chip is fixed in a bowl-shaped stand with a special adhesive, a resistor chip is fixed to a flat stand with the adhesive, the LED luminous chip has an electrode electrically connected to the bowl-shaped stand through conductive filaments, as well as an electrode electrically connected to one end of the resistor chip through the conductive filaments, and the other end of the resistor chip is electrically connected to the flat stand. The direct plug-in LED lamp bead with an internal resistor has a wider application range.

The invention discloses a terminal structure of a high-speed connector and a preparation process thereof, and the preparation process comprises the following steps: selecting a conductive core material, carrying out wire drawing treatment to obtain a uniform conductive wire, and carrying out surface treatment on the conductive wire through an electroplating process to form a metal coating; combining in a twisting or parallel winding manner to obtain a conductive wire core, and uniformly wrapping the conductive wire core with a composite material to form an inner insulating layer; then feeding the terminal into a mold, rolling the terminal into an initial structure of the U-shaped terminal by adjusting the mold and the pressure, and forming self-locking structures on two sides of the terminal; micro-structure textures are formed on the surface of the steel plate through laser engraving, and then an anti-corrosion coating is sprayed on the outer layer through a micro-spraying technology; the U-shaped terminal is uniformly wrapped with an elastic protection layer material through an extrusion injection molding process to form a protective sheath layer, and the U-shaped crimping terminal is manufactured; by optimizing the electrical connection performance, durability and adaptability, the connector is suitable for various high-requirement application scenes.

The invention discloses an endoscopic soft plasma radiofrequency ablation operation electrode tool bit, and relates to the technical field of minimally invasive medical equipment, the endoscopic soft plasma radiofrequency ablation operation electrode tool bit comprises an electrode assembly, an outer insulation sheath tube and a handle, the electrode assembly comprises an electrode holder, four mounting grooves are formed in the front end of the electrode holder in the circumferential direction of the electrode holder, and an electrode slice is fixedly mounted in each mounting groove; a conductive wire is fixedly arranged at the bottom of each electrode plate, a water outlet hole is formed in the center of the electrode holder in the length direction in a penetrating mode, a slidable cutting electrode is arranged in the water outlet hole, a water outlet gap is reserved between the cutting electrode and the electrode holder, and a ball head is arranged at the front end of the cutting electrode. The ball head is used for lifting tissue in the operation process, and a plurality of water inlets are formed in the rear end of the electrode holder in the circumferential direction. By means of the arranged electrode assembly, minimally invasive operation can be achieved through an endoscope channel under endoscope visibility, and vaporization, cutting, ablation shrinkage and hemostasis can be carried out on pathological tissue parts such as digestive tract mucosa, respiratory tract mucosa and polyp.

A tire fitted with a transponder comprises: a crown comprising a crown reinforcement having an axial end at each of its edges, connected at each of its axial ends by a sidewall to a bead having an interior end; a carcass reinforcement layer formed of parallel reinforcers, which is anchored in each bead around a bead wire to form a main part and a turn-up; the transponder comprising a core defining a first axis, a first cover filament helically twisted around the core and an electrical insulation device; and the first cover filament comprising at least two conductive filamentary elements galvanically connected to an electronic chip comprising a radiofrequency transmission-reception component. The thickness of elastomeric compound separating the outer cover filament, located radially outermost with respect to the first axis, and the reinforcements is greater than 0.5 millimeters.

The utility model discloses an open-type ceramic pressure and temperature sensor for a non-conducting medium, which solves the problem of uneven plane of a conductive silk-screen layer by sintering the conductive silk-screen layer on a ceramic chip and covering a glass glaze layer on the conductive layer to serve as a sealing surface of an O-shaped ring, and enables the surface of the conductive silk-screen layer to be sealed through a conductive pin outside the internal O-shaped ring. And a temperature signal of the NTC is transmitted to the FPC at the upper part of the pressure core body, so that the transmission of the NTC signal is realized. O-shaped rings are arranged on the upper surface and the lower surface of the ceramic chip for product sealing, and the influence of temperature change on the sealing structure can be almost ignored.

The invention discloses a flexible pressure sensor and a manufacturing method thereof. The manufacturing method of the flexible pressure sensor comprises the steps that a base body, a plurality of conductive wires and a plurality of metal terminals are provided, and the base body is made of cloth; a plurality of conductive wires are arranged in the base body in a penetrating mode in a knitting, embroidering or plain weaving mode, and the plurality of conductive wires are arranged on the base body at intervals; corresponding to the conductive wires, the first ends of the metal terminals penetrate through the base body, the metal terminals are arranged to be electrically connected with the conductive wires, and each metal terminal is connected with one conductive wire; and pressing and fixing the first end of the metal terminal on the substrate to obtain the flexible pressure sensor. The method has the advantages of simple process, reliable yield, high efficiency, easy mass production and the like.

The invention relates to the technical field of visual sensing modules, and discloses a sensing-storage-calculation integrated bionic visual sensing module in-storage calculation method and system.The method comprises the steps that photo-induced electrons excited by incident photons are directly injected into memristor oxygen vacancy conductive filaments through a shared electrode interface, and photocurrent driving signals are obtained; in a forward SET mode, driving memristor oxygen vacancy conductive filaments to form cross array conductivity distribution, and calculating row line driving voltage of a memristor cross array; applying the current to each cross point of cross array conductance distribution in a reverse RESET mode to obtain a flowing current of each cross point; and converging and summing the flowing current of each cross point at a column line node to obtain a column line output current, performing capacitor charging integration on the column line output current, and converting the column line output current into an analog domain convolution operation voltage, thereby avoiding intermediate multiple analog-to-digital and digital-to-analog conversion loss. And end-to-end low-delay and low-power-consumption processing from photon sensing to feature calculation is realized.

The invention discloses a flexible stimulating electrode for magnetic control guide implantation, which comprises an electrode wire main body, a conical electrode tip is arranged at the end part of the electrode wire main body, and a cavity is formed in the electrode wire main body; the plurality of stimulation contacts are arranged at equal intervals along the length direction of the electrode wire main body; the multiple signal recording contacts are arranged in the length direction of the electrode wire body at equal intervals; the conductive wire is electrically connected with each stimulation contact and the signal recording contact; the guide magnet is mounted in the cavity of the electrode wire main body; and the magnetic control system is used for generating a magnetic field. The magnetic field generated by the magnetic control system can apply magnetic force to the electrode wire main body inserted into the body of a patient, so that the position of the electrode wire main body is finely adjusted; through the stimulation contacts arranged on the electrode wire body, different areas of a patient can be electrically stimulated, and output current is recorded through the signal recording contacts, so that the stimulation intensity of the stimulation contacts is controlled in a closed-loop mode, and precise stimulation is achieved.

The invention discloses a hafnium oxide-based RRAM with a niobium oxide thermal enhancement layer and application, and belongs to the field of semiconductor memory devices. The hafnium oxide-based RRAM with the niobium oxide thermal enhancement layer sequentially comprises a top electrode, a niobium oxide layer, an HfO2 layer, an HfOx layer and a bottom electrode from top to bottom, and the niobium oxide thermal enhancement layer is inserted into the hafnium oxide-based RRAM, so that the forming voltage and the working temperature can be reduced, a storage window is also enlarged, and in the forming process, the storage temperature of the storage window can be increased. The growth direction of the conductive filament is effectively controlled; and the breaking point of the conductive filament can be effectively regulated and controlled in the reset process.

The invention belongs to the related technical field of semiconductor devices, and discloses a relaxation type memristor and a preparation method and application thereof.The relaxation type memristor comprises a bottom electrode layer, a resistive layer and a top electrode layer which are arranged from bottom to top, and the top electrode layer is made of an inactive metal elementary substance or alloy containing inactive metal; the resistive layer is an inorganic molecular crystal film. According to the memristor, an inactive metal is adopted as a material of a top electrode layer of the memristor, and a growth process of a conductive wire in an inorganic molecular crystal resistive layer is controlled, so that a stable and adjustable conductive state is obtained, accurate mapping of an analog electric signal is further realized, and higher precision is provided for neuromorphic calculation based on the memristor.

The invention provides a 1S1R storage unit and a preparation method thereof, and belongs to the technical field of semiconductors and CMOS hybrid integrated circuits. In the preparation process of the method, the preparation device comprising the first electrode layer, the gate layer and the buffer layer is subjected to annealing process treatment, so that the gate layer and the buffer layer are crystallized, after the gate layer is crystallized, the Forming voltage can be reduced, the threshold transformation characteristic yield of the device is improved, a protruding nanocrystalline interface is formed on the surface due to the crystallization of the buffer layer, and the yield of the device is improved. And meanwhile, local field intensity is also increased by a nanocrystalline interface, so that conductive filaments of the resistive layer are robust, the positions of the formed conductive filaments of the resistive layer have a certain rule, the randomness of the generation positions of the conductive filaments is reduced, and the uniformity of electrical properties is improved. The 1S1R unit structure is not only suitable for a 1S1R array of a Crossbar structure, but also suitable for a 1S1R array of a vertical structure after being properly modified, and has a wide application prospect.

The utility model relates to a stacked gate battery and a photovoltaic module. The stacked gate battery comprises a battery substrate and a plurality of current collection layers arranged on the surface of the battery substrate, the plurality of current collection layers are arranged at intervals along the width direction of the battery substrate, and each current collection layer is in a shape with two wide ends and a narrow middle part in the length direction of the battery substrate. According to the stacked gate battery, the current collection layer is arranged to be of a structure with two wide ends and a narrow middle part, so that the end area of the current collection layer in the length direction of the battery substrate is larger than the middle area, namely, the end area of the current collection layer is increased, and the welding area between the two ends of the current collection layer and the conductive wires can be increased; according to the present invention, the thermal stress between the two ends of the current collection layer and the conductive wire can be reduced, and the welding tension between the two ends of the current collection layer and the conductive wire can be increased so as to prevent the sealing-off of the two ends of the conductive wire, such that the solar cell can have excellent performance stability and excellent durability even if the solar cell is used in the high-temperature and high-humidity environment.

The application relates to the field of metal support polishing, in particular to an automatic polishing tool and polishing method for a metal support, the tool comprising a base, a rotating shaft, a motor, clamping members and a conductive wire, the rotating shaft being arranged on the base and capable of rotating relative to the base around a rotating shaft axis parallel to the vertical direction, the rotating shaft axis coinciding with the central axis of the rotating shaft; the two clamping members are sequentially arranged on the rotating shaft along the vertical direction and are relatively fixed with the rotating shaft; the conductive wire is used for clamping between the two clamping members, and in the clamping state, the part of the conductive wire between the two clamping members is arranged in parallel to the rotating shaft and is spaced apart from the rotating shaft in the radial direction of the rotating shaft; the application can reduce the consumption of polishing liquid and reduce the damage to the metal support.

The present application discloses a ReRAM device, the bottom surface of a first resistance switching layer is connected with a bottom electrode, and a first groove is formed in the center of the top surface of the first resistance switching layer. A second resistance switching layer is formed on the first resistance switching layer, the center of the bottom surface of the second resistance switching layer is filled downwards into the first groove, and the top surface of the second resistance switching layer is connected with a top electrode. The material of the second resistance switching layer is more conductive than the material of the first resistance switching layer. The present application can maintain the stability of the central conductive filament in the low resistance state. The present application further discloses a method for manufacturing the ReRAM device.

The present invention discloses an aerospace electromagnetic shielding material and preparation method based on modified polytetrafluoroethylene, which belongs to the field of nanomaterial technology. The method uses polytetrafluoroethylene dispersed resin as a matrix, adds extrusion aids and carbon nanotubes, and pre-presses into a blank after stirring and aging, and then pushes and calenders to prepare a base film, which is then dried, stretched and mechanically opened to form a microfiber layer; at the same time, polytetrafluoroethylene, conductive filaments and conductive reinforcing agents are twisted to prepare a twisted layer; the microfiber layer is used as the outer layer and the twisted layer is used as the inner layer to weave an electromagnetic shielding layer, and finally soaked in shielding liquid, dried and hot-pressed to prepare an electromagnetic shielding material. The material achieves excellent electromagnetic shielding performance and low resistance by constructing a continuous conductive network, meeting the requirements of the aerospace field for lightweight, high conductivity and anti-electromagnetic interference. The process parameters of the present invention are strictly controlled to ensure the optimization of fiber structure and conductive performance, and is suitable for electromagnetic protection in extreme environments.

The invention is suitable for the field of building materials, and provides a buckle type steel anti-static floor which comprises a steel floor body, clamping grooves are formed in the four edges of the steel floor body, edge covering mechanisms are arranged in the clamping grooves, and joint filling assemblies are arranged between the edge covering mechanisms. The edge covering mechanism comprises a groove frame arranged on the inner side wall of the clamping groove, winding covered edges are arranged on the upper portion and the lower portion of the groove frame, and the two winding covered edges are attached to the upper face and the lower face of the steel floor correspondingly. When the steel floor is used and the steel floor is spliced and formed, after the top of the steel floor is pressed, the steel sheet has the supporting strength on the steel floor, and the buffering foam gasket and the buffering foam square block at the bottom of the steel sheet are kept flush with each other; furthermore, the buffer foam gasket and the buffer foam square block at the bottom of the steel sheet can play a role in buffering, and the electric charges generated by the steel floor can be completely grounded by the conductive filaments on the iron bolts, so that the steel floor can be prevented from discharging to generate sparks.

This invention relates to the fields of semiconductor information storage and artificial synaptic devices, specifically to a biological synaptic intrinsically self-assembled topological phase-change memristor and its fabrication method. The fabrication method includes: providing a substrate; depositing a bottom electrode; and depositing SrFeO on the bottom electrode. x The thin film serves as the storage medium layer; the storage medium layer undergoes heat treatment, including in-situ annealing and post-annealing. By controlling the oxygen pressure difference between in-situ and post-annealing, the single-component SrFeO is made more efficient. x An intrinsically self-assembled superlattice structure, characterized by alternating vertical and horizontal orientation regions of oxygen vacancy channels, spontaneously forms within the thin film. This structure restricts the formation sites of conductive filaments, significantly improving the consistency and stability of the device's resistive switching cycle. The process of this invention is simple, requiring no introduction of a second-phase material. The resulting memristor requires no electrical formation, exhibits a high on / off ratio, multi-level storage, and short-term synaptic plasticity, making it applicable to neuromorphic computing chips and artificial intelligence devices.

The diversified enameled wire conductive wire pretreatment device comprises a supporting frame, an annealing treatment structure and a drying treatment structure are arranged on the supporting frame, the annealing treatment structure comprises a circulating groove, an annealing groove, a control device, multiple sets of heating pieces, a positioning plate and multiple sets of sensors are arranged on the circulating groove, and multiple sets of positioning holes are formed in the positioning plate. A drain pipe and a circulating pipe are arranged at the bottom of the circulating tank, a circulating pump is arranged on the circulating pipe, the water outlet end of the circulating pipe is located above a tank opening of the annealing tank, the annealing tank is provided with a plurality of groups of feeding pipes and discharging holes matched with the feeding pipes in an aligned mode, an overflow pipe is arranged in the annealing tank, and the water outlet end of the overflow pipe is located above the tank opening of the circulating tank. And a water inlet pipe is arranged on the annealing tank and is connected with a deionized water supply device. By adopting the structure, the surface quality and the conductivity of the conductive wire are improved, the pretreatment process is accurate and controllable, the treatment flow is optimized, the production efficiency is improved, the adaptability and the operation convenience of the device are enhanced, and the production loss and the cost are reduced.

The invention relates to a lead-free perovskite composite material, a preparation method thereof and application of the lead-free perovskite composite material in a resistive random access memory, and belongs to the technical field of preparation of the resistive random access memory. The lead-free perovskite composite material comprises a doped Sb element, the chemical formula of the lead-free perovskite composite material is Cs3Cu2I5: Sb, the molar ratio of Sb to Cu is (0.1-1): 1, the perovskite Cs3Cu2I5 is doped and modified through the element Sb, the content of iodine vacancy (VI) in cesium-iodine-copper perovskite can be reduced, the stability of conductive filaments can be improved, and therefore the resistance change performance of the resistive random access memory is improved.

The utility model relates to the technical field of electric curtains, in particular to a curtain track with an integrated conductive structure, which comprises a conductive wire and at least two segmented tracks, and the end parts of the two adjacent segmented tracks are spliced and connected. The conductive wire is used for being electrically contacted with a conductive roller of the traction device and providing electric energy for the traction device, the head end of the conductive wire is connected with the head end of the first segmented track, and the tail end of the conductive wire penetrates through the other segmented tracks and is connected with the tail end of the last segmented track. By means of the structure, the curtain track can be spliced and installed only through alignment of the segmented track, the installation efficiency of the curtain track is improved, the conductive continuity is improved through the integral design of the conductive structure, and transmission of electric energy is optimized.

A flexible braided electrode and a method for electrochemical polishing of a complex internal channel, which belong to the technical field of electrolytic machining. The flexible braided electrode is formed by inter-braiding a plurality of flexible conductive wires and a plurality of flexible insulating wires at certain intervals, the diameter of the insulating wires is greater than that of the conductive wires, and steps of a certain height are naturally formed between the flexible conductive wires and the flexible insulating wires, such that short-circuit burning caused by contact between the conductive metal wires and internal channels can be avoided, mass transfer can be enhanced, and the removal of products can be accelerated. The flexible braided electrode is of a hollow meshed cylindrical structure, such that internal-external composite electrolytic-solution flushing can be implemented, thereby improving a flushing effect. During polishing, the flexible braided electrode can adaptively bend and deform in a bent internal channel, such that the characteristic of the inside being in communication with the outside is used to perform internal-external composite electrolytic-solution flushing, and the rotation and reciprocating motion of the electrode are combined to implement electrochemical polishing of the complex internal channel. The flexible braided electrode provided in the present application, supplemented with an innovative process method, can realize efficient and high-quality finishing of the complex internal channel.