167 results about "Conductive filament" patented technology

The invention discloses a twisted pair crimping system and a twisted pair crimping method. The twisted pair crimping system comprises a cable clamp used for clamping and fixing a twisted pair, and each conductor core of the twisted pair comprises a plurality of conductive wires twisted together; the moving device is used for moving the cable clamp and the twisted pair in the horizontal direction perpendicular to the axial direction of the twisted pair; and the artificial intelligence visual device is arranged at the detection station and can simulate human eyes to identify the actual number of the conductive wires of each conductor core of the twisted pair. And when the artificial intelligence visual device recognizes that the actual number of the conductive wires of the conductor core is not equal to the preset number, the artificial intelligence visual device judges that the twisted pair is unqualified. According to the invention, the artificial intelligence visual device can simulate human eyes to identify the actual number of the conductive wires in the conductor core of the twisted pair. Therefore, whether the quality of the twisted pair is qualified or not can be judged in advance according to the identified actual number of the conductive wires in the conductor core, and the quality of the twisted pair product is improved.

The invention relates to the technical field of visual sensing modules, and discloses a sensing-storage-calculation integrated bionic visual sensing module in-storage calculation method and system.The method comprises the steps that photo-induced electrons excited by incident photons are directly injected into memristor oxygen vacancy conductive filaments through a shared electrode interface, and photocurrent driving signals are obtained; in a forward SET mode, driving memristor oxygen vacancy conductive filaments to form cross array conductivity distribution, and calculating row line driving voltage of a memristor cross array; applying the current to each cross point of cross array conductance distribution in a reverse RESET mode to obtain a flowing current of each cross point; and converging and summing the flowing current of each cross point at a column line node to obtain a column line output current, performing capacitor charging integration on the column line output current, and converting the column line output current into an analog domain convolution operation voltage, thereby avoiding intermediate multiple analog-to-digital and digital-to-analog conversion loss. And end-to-end low-delay and low-power-consumption processing from photon sensing to feature calculation is realized.

The invention provides a 1S1R storage unit and a preparation method thereof, and belongs to the technical field of semiconductors and CMOS hybrid integrated circuits. In the preparation process of the method, the preparation device comprising the first electrode layer, the gate layer and the buffer layer is subjected to annealing process treatment, so that the gate layer and the buffer layer are crystallized, after the gate layer is crystallized, the Forming voltage can be reduced, the threshold transformation characteristic yield of the device is improved, a protruding nanocrystalline interface is formed on the surface due to the crystallization of the buffer layer, and the yield of the device is improved. And meanwhile, local field intensity is also increased by a nanocrystalline interface, so that conductive filaments of the resistive layer are robust, the positions of the formed conductive filaments of the resistive layer have a certain rule, the randomness of the generation positions of the conductive filaments is reduced, and the uniformity of electrical properties is improved. The 1S1R unit structure is not only suitable for a 1S1R array of a Crossbar structure, but also suitable for a 1S1R array of a vertical structure after being properly modified, and has a wide application prospect.

The utility model relates to a stacked gate battery and a photovoltaic module. The stacked gate battery comprises a battery substrate and a plurality of current collection layers arranged on the surface of the battery substrate, the plurality of current collection layers are arranged at intervals along the width direction of the battery substrate, and each current collection layer is in a shape with two wide ends and a narrow middle part in the length direction of the battery substrate. According to the stacked gate battery, the current collection layer is arranged to be of a structure with two wide ends and a narrow middle part, so that the end area of the current collection layer in the length direction of the battery substrate is larger than the middle area, namely, the end area of the current collection layer is increased, and the welding area between the two ends of the current collection layer and the conductive wires can be increased; according to the present invention, the thermal stress between the two ends of the current collection layer and the conductive wire can be reduced, and the welding tension between the two ends of the current collection layer and the conductive wire can be increased so as to prevent the sealing-off of the two ends of the conductive wire, such that the solar cell can have excellent performance stability and excellent durability even if the solar cell is used in the high-temperature and high-humidity environment.

The application relates to the field of metal support polishing, in particular to an automatic polishing tool and polishing method for a metal support, the tool comprising a base, a rotating shaft, a motor, clamping members and a conductive wire, the rotating shaft being arranged on the base and capable of rotating relative to the base around a rotating shaft axis parallel to the vertical direction, the rotating shaft axis coinciding with the central axis of the rotating shaft; the two clamping members are sequentially arranged on the rotating shaft along the vertical direction and are relatively fixed with the rotating shaft; the conductive wire is used for clamping between the two clamping members, and in the clamping state, the part of the conductive wire between the two clamping members is arranged in parallel to the rotating shaft and is spaced apart from the rotating shaft in the radial direction of the rotating shaft; the application can reduce the consumption of polishing liquid and reduce the damage to the metal support.

The present application discloses a ReRAM device, the bottom surface of a first resistance switching layer is connected with a bottom electrode, and a first groove is formed in the center of the top surface of the first resistance switching layer. A second resistance switching layer is formed on the first resistance switching layer, the center of the bottom surface of the second resistance switching layer is filled downwards into the first groove, and the top surface of the second resistance switching layer is connected with a top electrode. The material of the second resistance switching layer is more conductive than the material of the first resistance switching layer. The present application can maintain the stability of the central conductive filament in the low resistance state. The present application further discloses a method for manufacturing the ReRAM device.

This invention relates to the fields of semiconductor information storage and artificial synaptic devices, specifically to a biological synaptic intrinsically self-assembled topological phase-change memristor and its fabrication method. The fabrication method includes: providing a substrate; depositing a bottom electrode; and depositing SrFeO on the bottom electrode. x The thin film serves as the storage medium layer; the storage medium layer undergoes heat treatment, including in-situ annealing and post-annealing. By controlling the oxygen pressure difference between in-situ and post-annealing, the single-component SrFeO is made more efficient. x An intrinsically self-assembled superlattice structure, characterized by alternating vertical and horizontal orientation regions of oxygen vacancy channels, spontaneously forms within the thin film. This structure restricts the formation sites of conductive filaments, significantly improving the consistency and stability of the device's resistive switching cycle. The process of this invention is simple, requiring no introduction of a second-phase material. The resulting memristor requires no electrical formation, exhibits a high on / off ratio, multi-level storage, and short-term synaptic plasticity, making it applicable to neuromorphic computing chips and artificial intelligence devices.

The diversified enameled wire conductive wire pretreatment device comprises a supporting frame, an annealing treatment structure and a drying treatment structure are arranged on the supporting frame, the annealing treatment structure comprises a circulating groove, an annealing groove, a control device, multiple sets of heating pieces, a positioning plate and multiple sets of sensors are arranged on the circulating groove, and multiple sets of positioning holes are formed in the positioning plate. A drain pipe and a circulating pipe are arranged at the bottom of the circulating tank, a circulating pump is arranged on the circulating pipe, the water outlet end of the circulating pipe is located above a tank opening of the annealing tank, the annealing tank is provided with a plurality of groups of feeding pipes and discharging holes matched with the feeding pipes in an aligned mode, an overflow pipe is arranged in the annealing tank, and the water outlet end of the overflow pipe is located above the tank opening of the circulating tank. And a water inlet pipe is arranged on the annealing tank and is connected with a deionized water supply device. By adopting the structure, the surface quality and the conductivity of the conductive wire are improved, the pretreatment process is accurate and controllable, the treatment flow is optimized, the production efficiency is improved, the adaptability and the operation convenience of the device are enhanced, and the production loss and the cost are reduced.

The invention relates to a lead-free perovskite composite material, a preparation method thereof and application of the lead-free perovskite composite material in a resistive random access memory, and belongs to the technical field of preparation of the resistive random access memory. The lead-free perovskite composite material comprises a doped Sb element, the chemical formula of the lead-free perovskite composite material is Cs3Cu2I5: Sb, the molar ratio of Sb to Cu is (0.1-1): 1, the perovskite Cs3Cu2I5 is doped and modified through the element Sb, the content of iodine vacancy (VI) in cesium-iodine-copper perovskite can be reduced, the stability of conductive filaments can be improved, and therefore the resistance change performance of the resistive random access memory is improved.

The utility model relates to the technical field of electric curtains, in particular to a curtain track with an integrated conductive structure, which comprises a conductive wire and at least two segmented tracks, and the end parts of the two adjacent segmented tracks are spliced and connected. The conductive wire is used for being electrically contacted with a conductive roller of the traction device and providing electric energy for the traction device, the head end of the conductive wire is connected with the head end of the first segmented track, and the tail end of the conductive wire penetrates through the other segmented tracks and is connected with the tail end of the last segmented track. By means of the structure, the curtain track can be spliced and installed only through alignment of the segmented track, the installation efficiency of the curtain track is improved, the conductive continuity is improved through the integral design of the conductive structure, and transmission of electric energy is optimized.

The invention belongs to the technical field of composite material weaving, and particularly relates to an electric heating material woven tubular structure, electric heating material woven cloth and an electric heating layer structure. The braided structure is composed of an outer-layer glass fiber tubular structure and an inner-layer carbon nano tube conductive wire, the carbon nano tube conductive wire is wrapped in the glass fiber tubular structure in a spiral winding mode, and a composite material braided bundle which is high in strength, insulated, light in weight and conductive is formed. The two-dimensional woven bundle is further made into woven cloth, the surface heating function is achieved through the good conductivity of the woven cloth, and the method is particularly suitable for heating assembly arrangement of structural parts such as complex curved surfaces or airfoils. The technology overcomes the defects of traditional heating materials in the aspects of shape adaptability and strength, and has wide application prospects.

The application discloses a multi-value programming method of a memristor for improving device retention characteristics. The method divides the target conductance of the programming of the memristor in a low conductance range or a high conductance range based on a certain conductance threshold, and adopts a programming scheme with different initial conductance states, programming pulse directions and denoising pulse directions for different ranges. The multi-value programming method of the application is based on the physical process of the growth and rupture of a conductive filament in the resistance change process of the memristor, so that the state of the memristor after the programming is as stable as possible, and the memristor device has better multi-value retention characteristics. Compared with the existing multi-value programming scheme of the memristor, the application can improve the retention characteristics of the data storage after the multi-value programming of the device without greatly increasing the programming time and power consumption of the device, so that the device can be better used in the data storage field or the in-memory computing field, thereby improving the reliability and system performance of the storage and calculation of the memristor.

The application provides a metal-based needle tube and a preparation method and application thereof, and relates to the technical field of detection, and aims to solve the technical problem that the sampling needle is made of rigid material and cannot detect the solution property of the sample or reagent at the same time. The preparation method of the metal-based needle tube comprises the following steps: anodizing the needle tube as an anode in an electrolyte, taking a conductive wire as a cathode, arranging the conductive wire in the needle tube, and arranging the conductive wire coaxially with the needle tube; the voltage of anodization is 0.1V-50V, the temperature is 15-80 DEG C, and the time is 1-600 min; coating the wall surface of the needle tube after anodization with a uniform polymer film; the polymer is one of polytetrafluoroethylene, polydimethylsiloxane and polyethylene; and the metal is one of titanium, copper and stainless steel. The needle tube is used for sampling and detecting the concentration, type or pH value of the liquid at the same time.

The utility model discloses a grid line structure and a solar cell, the grid line structure is provided with an upper end and a lower end in the height direction, the upper end is configured to be arranged in a protruding mode in the width direction of the grid line structure along the direction far away from the lower end, and the projection of the upper end in the height direction is located in the range of the lower end. According to the grid line structure and the solar cell provided by the utility model, the grid line structure also has ultrahigh reflectivity, can reduce the equivalent shading area of the surface of the cell, can replace a triangular conductive wire stacked gate assembly in the current industry, and is higher in stability and better in wear resistance compared with a triangular conductive wire.

A tension sensing cable for a cable drive mechanism of a robot, in particular a surgical robot, is provided. The tension sensing cable is configured to respond to an axial tensile force applied thereon, wherein a radial pressure applied on the cable has a lower impact on a voltage output of the cable than the axial force. The cable comprises a main conductive filament and a secondary conductive filament, where the main filament and / or the secondary filament are helically wound and configured such that when the main filament and the secondary filament are in contact with each other, charge transfer occurs between two contact surfaces of the main filament and the secondary filament. When an axial tensile force is applied to the cable, a potential difference generated by the charge transferred between the primary filament and the secondary filament varies, where the variation corresponds to the applied axial tensile force.

The utility model belongs to the technical field of batteries, and discloses a three-electrode battery, the three-electrode battery comprises a shell, a core bag and a reference electrode, the core bag is formed by stacking a plurality of pole pieces, a first diaphragm is stacked between any two adjacent pole pieces, the reference electrode comprises a lead, and the lead is divided into a first lead section and a second lead section. Part of the first section of wire extends out of the core package, and the first section of wire is completely coated with the second diaphragm, so that the part, which is positioned on the outer side of the core package and is close to the core package, of the wire is coated with the second diaphragm, namely, the part, which is positioned on the outer side of the core package and is close to the pole piece, of the wire is coated with the second diaphragm; therefore, even if the conductive wire is exposed due to the fact that the insulating layer of a part of the second section of the wire extending out of the core package loses efficacy due to scratching, the exposed conductive wire cannot be contacted with the pole piece, and the situation that the manufactured three-electrode battery is unqualified due to the fact that the failed part of the insulating layer on the wire is directly contacted with the pole piece is prevented.

The invention discloses a volatile threshold switching device based on an atomic-scale geometric confinement layer and a preparation method thereof. The device comprises a substrate layer, a bottom electrode layer, a functional active layer, a geometric confinement layer and a top electrode layer which are stacked in sequence, the functional active layer is used for providing active metal ions to form conductive filaments; the functional active layer is made of a two-dimensional layered ferroelectric material; the geometric confinement layer is made of hexagonal boron nitride sheets, and the thickness range of the hexagonal boron nitride sheets is 1-5 hexagonal boron nitride atomic layers. According to the invention, the h-BN material with atomic-scale lattice defects is introduced as the geometric confinement layer, and the diameter of the conductive filament formed by copper ions in the functional active layer is physically limited by using the atomic-scale ion sieve effect of the h-BN material, so that the problem of failure caused by overgrowth of the filament in a traditional device is solved.

This disclosure pertains to a method for manufacturing a heating conductive filament, comprising: (a) uniformly mixing carbon-based nanofillers (101) with a thermoplastic polymer matrix (103) to form a polymer mixture; (b) extruding the polymer mixture to form a continuously mixed filament (105; 106); (c) pelletizing the filament to form a granulate (107) and drying the granulate (107) to remove moisture; (d) re-extruding the granulate (107) to form an extruded filament, and (e) guiding the re-extruded filament through a drawing system comprising rollers and winders with a drawing rate between 3 and 9, to output the heating conductive filament in a wound form, the carbon-based nanofillers comprising carbon black and single-walled carbon nanotubes, the carbon black having a concentration range of 3% to 25% by weight and / or the single-walled carbon nanotubes having a concentration range of 0.3% to 5% by weight.

The utility model provides a stacked gate battery welding device which is used for welding a conductive wire to a seed layer of a battery piece and comprises an adsorption module, a wire winding module, a detection module and a welding module. The adsorption module comprises a roller, a first fixed cutting mechanism and a second fixed cutting mechanism. The wire winding module comprises a first driving mechanism and a wire winding mechanism. The positions of the conductive wire and the battery piece on the roller are detected through the detection module, and the first driving mechanism is correspondingly adjusted according to the detection result to perform deviation compensation, so that the conductive wire is aligned with the seed layer when spirally wound on the roller. When the conductive wire on the roller is aligned with the seed layer, the welding module welds the conductive wire to the seed layer of the battery piece, so that the pseudo soldering rate between the conductive wire and the seed layer is effectively reduced, and the yield of the stacked gate battery is improved.

The utility model discloses a continuous rotating electrostatic spinning device which comprises a base, a liquid storage tank arranged on the base, a spinning head arranged in the liquid storage tank and a high-voltage power source. The spinning head comprises a center shaft rotating in the liquid tank, an insulation sleeve arranged on the center shaft and a conductive wire spirally wound on the insulation sleeve, and openings are formed in the position, corresponding to the upper half portion of the conductive wire, of the upper end of the liquid storage tank at intervals. By arranging the quasi-closed feeding loop, volatilization of a solvent in the liquid storage tank in the spinning process is effectively restrained, the viscosity change of the feed liquid is avoided, and the stability of the spinning state is guaranteed.

The invention discloses a solar cell fine grid electrode, a fine grid interconnection cell string and a preparation method thereof, and relates to the technical field of photovoltaic modules. The preparation method of the fine gate electrode comprises the following steps: arranging a pre-contact fine gate in a preset fine gate electrode area on the surface of an initial battery piece to obtain a target battery piece; placing a conductive wire on the pre-contact fine grid; deflection voltage is applied to the pre-contact fine grid through the conductive wire, photons are injected into the target battery piece, so that the pre-contact fine grid forms a fine grid electrode which is in ohmic contact with the doping layer of the target battery piece, and the conductive wire is connected with the fine grid electrode. According to the preparation method provided by the invention, the connection between the conductive wire and the thin grid line electrode is completed while the thin grid line electrode is formed by utilizing the photon-assisted sintering technology, so that the preparation process of the thin grid interconnected cell string is simplified, and particularly, the thin grid electrode of a main-grid-free back contact solar cell can be prepared by utilizing the photon-assisted sintering technology.

The utility model relates to the technical field of solar cells, in particular to a solar cell and a photovoltaic module. The solar cell comprises a cell body, a conductive layer and a conductive wire. The conductive layer is arranged on the surface of the battery body and is electrically connected with the battery body; the conductive wire comprises a conductive substrate and a connecting material layer, the conductive substrate is laminated on one side, deviating from the battery body, of the conductive layer, and the connecting material layer is at least arranged on the side surface, facing the conductive layer, of the conductive substrate. The connecting material layer is in contact with the conductive layer so that the conductive wires are electrically connected with the conductive layer. The connecting material layer protrudes in a direction away from the conductive substrate. Wherein the maximum height H between one end, far away from the conductive substrate, of the connecting material layer and the conductive substrate is 3-20 [mu] m, so that the contact resistance between the conductive wire and the cell body is reduced, and the collection and export efficiency of photo-generated current is improved. And the height difference of the contact part of the conductive wire and the conductive layer is small, so that the inclination angle of the conductive wire is smaller.

The invention relates to the field of semiconductors, and discloses a resistive random access memory and a manufacturing method thereof, the resistive random access memory comprises at least one memory cell, the memory cell comprises a first metal interconnection layer, a first dielectric layer, a first resistive random layer, a second dielectric layer, a conductive plug, at least one first conductor and a second metal interconnection layer; a conductive filament is formed after the first resistive layer is electrified; the first resistive layer and the second dielectric layer are located on the upper surface of the first dielectric layer; the first resistive layer and the first dielectric layer are provided with a first through hole penetrating through the first resistive layer and the first dielectric layer, and the conductive plug is located in the first through hole and electrically connected with the first metal interconnection layer; the second dielectric layer is provided with at least one second through hole penetrating through the thickness of the second dielectric layer, the side wall of the second through hole is in contact with the first resistive layer, a first electric conductor is distributed in each second through hole, and the first electric conductors are electrically connected with the second metal interconnection layer. Performance fluctuation can be reduced, and conversion of the resistance state can be accurately controlled.

A friction induced charge based tension sensing yarn TCTSY system is provided, comprising: a main conductive filament having a first dielectric layer coated around an outer surface of the main conductive filament; and an auxiliary conductive filament. When the outer surface of the main conductive filament and the outer surface of the auxiliary conductive filament are in contact with each other, charge is transferred between the contact outer surfaces of the main conductive filament and the auxiliary conductive filament. When an axial tensile force is applied to the TCTSY system, a potential difference is generated by the charge transferred between the primary conductive filament and the secondary conductive filament, the potential difference being indicative of the magnitude of the applied force. The TCTSY systems may be integrated into warp and weft yarns of a fabric in a weaving pattern such that the fabric has distributed weft and warp axial tension sensing, where any two intersecting TCTSY systems are configured to measure a tension profile over an area around an intersection of the fabric.

The utility model relates to the photovoltaic field, in particular to a stacked gate battery welding hold-down device. The utility model provides a stacked gate battery welding hold-down device. The stacked gate battery welding hold-down device comprises a hold-down device body, the magnetic attraction assemblies are arranged at the two ends of the pressing tool body. The magnetic attraction assemblies are arranged at the two ends of the hold-down device body, the hold-down device body can be attracted to the roller through the magnetic attraction assemblies, and meanwhile pressure needed by welding can be generated between the battery piece and the conductive wire.

A tribo-induced charges based tension sensing yarn (TCTSY) system is provided, including a primary conductive filament having a first dielectric layer coated around an outer surface of the primary conductive filament; and a secondary conductive filament. When outer surfaces of the primary and secondary conductive filaments contact each other, charges are transferred between the contacted outer surfaces of the primary and secondary conductive filaments. When an axial tensile force is applied to the TCTSY system, a potential difference is generated by the transferred charges between the primary conductive filament and the secondary conductive filament, indicating a magnitude of the applied force. The TCTSY system can be integrated into warp and weft yarns of the fabric with weaving pattern, enabling fabric with distributed weft and warp-axial tension sensing where any two crossed TCTSY systems are configured to measure tension distribution over an area around crossed point of the fabric.

A semiconductor device includes a first electrode layer, a first resistance change layer disposed on the first electrode layer, a first filament control layer disposed on the first resistance change layer, a second resistance change layer disposed on the first filament control layer, a second filament control layer disposed on the second resistance change layer, a third resistance change layer disposed on the second filament control layer, an oxygen vacancy reservoir layer disposed on the third resistance change layer, and a second electrode layer disposed on the oxygen vacancy reservoir layer. A conductive filament corresponding to a resistance state of the semiconductor device is configured to be formed in a direction from the oxygen vacancy reservoir layer to the first electrode layer.

The application provides a cleaning device and process for reducing metal particle residues of a film box, comprising a bearing platform for bearing the film box, a cleaning device being mounted on the upper end of the bearing platform, and a plurality of bearing openings being arranged on the surface of the bearing platform, a plurality of the film boxes being arranged in an array in the corresponding bearing openings, and the outer edge limit endpoints of the film boxes in the same column being located on the same virtual contact line; the device further comprises a conductive device, the conductive device comprising a movable conductive wire, the conductive wire being parallel to the contact line, and the conductive wire having a first position close to the film box and a second position away from the film box. The application can release static electricity for a plurality of film boxes at one time, improves the efficiency of static electricity release, and has a small contact area of the conductive wire, a simple control method, improved efficiency of static electricity release, and reduced difficulty and cost of static electricity release.

A low formation voltage NVM device is provided by forming a pair of sacrificial conductive pads on an interconnect dielectric material layer that is embedded with a pair of second conductive structures and a patterned material stack. One of the sacrificial conductive pads has a first region and contacts a surface of one of the second conductive structures that contacts a surface of an underlying first conductive structure, and the other of the sacrificial conductive pads has a second region different from the first region and contacts a surface of the other of the second conductive structures that contacts a surface of a top electrode of the patterned material stack. A plasma treatment is performed to induce an antenna effect and convert a dielectric switching material of the patterned material stack into a conductive filament. After the plasma treatment, the pair of sacrificial conductive pads is removed.

The utility model relates to the technical field of dust-free cloth processing, in particular to a dust-free cloth laminating machine containing carbon fiber conductive filaments, which comprises a metal base for dust-free cloth processing, side seats are mounted on two sides of the top of the metal base, connecting seats are arranged at the tops of the two groups of side seats, and a lifting top seat is mounted between the connecting seats on two sides. And a top laminating seat and a bottom laminating seat are mounted between the two groups of side seats in a sliding manner. According to the utility model, support is provided for the installation of the lifting top seat and the laminating seat through the side seat and the connecting seat which are arranged on the two sides of the top; the top of the piston rod of the side hydraulic cylinder is connected with the bottom of the connecting seat, so that the lifting function of the lifting top seat and the top laminating seat is realized; through the conductive sheets embedded in the tops of the side seats in each group and close contact with the carbon fiber conductive wires, conduction of current in the lamination process is ensured; and through the arrangement of the carbon fiber conductive wires, the laminating efficiency is improved, and the uniform heating and the conductive performance of the dust-free cloth in the laminating process are ensured.