The invention provides a resistive random access memory and a manufacturing method thereof. The memory comprises a lower electrode, a local control electrode located on the lower electrode, a storage medium layer located on the lower electrode and the local control electrode, and an upper electrode located on the storage medium layer. Through the local control electrode located on the lower electrode, local electric field intensity in the storage medium is enhanced, so formation of conductive filaments along the control electrode is facilitated, so that the formation and disconnection of the conductive filaments are effectively controlled, thereby the programming voltage discrete problem caused by the random formation of the conductive filaments is solved, so the concentricity of a programming voltage of a device is facilitated, and the working stability of the device is improved.