Nonvolatile resistive random access memory device and preparation method thereof

Abstract

A nonvolatile resistive random access memory device comprises an inert metal electrode, a resistive function layer and an oxidation-prone metal electrode. The nonvolatile resistive random access memory device is characterized in that a grapheme barrier layer containing a plurality of nano-pores is inserted between the oxidation-prone metal electrode and the resistive function layer, so that metal ions formed after the metal oxidation of the oxidation-prone metal electrode in a device programming process are controlled to enter the resistive function layer only through the positions of the plurality of nano-pores. According to the invention, the grapheme insertion layer structure containing the nano-pores is added between the oxidation-prone metal electrode and the resistive function layer, the diffusion of the metal ions is blocked, and the metal ions formed by the oxidation-prone metal electrode in the device programming process are enabled to enter the resistive function layer only through the positions of the plurality of nano-pores, so that the growing positions of conductive filaments are controlled.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a resistive variable memory unit structure and a manufacturing method based on nanoporous graphene intercalation that can control the growth position of conductive filaments. Background technique [0002] With the demand for large-capacity and low-power storage in multimedia applications and mobile communications, the market share of non-volatile memory, especially flash memory, has become larger and larger, and it has gradually become a very important memory. . The main feature of non-volatile memory is that it can save the stored information for a long time without power on. It not only has the characteristics of read-only memory, but also has a high access speed. [0003] The non-volatile memory currently on the market is mainly flash memory, but flash memory devices have excessive operating voltage, slow operating speed, insufficient durability, and shor...

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Problems solved by technology

[0007] From the above, the purpose of the present invention is to overcome the above-mentioned technical difficulties, the shortcomings of the resistive variable memory based on the formation and fracture principle of metal conductive filaments, and to provide a method that can control the formation position of conductive filaments and control the conductive filaments. A new device structure and its manufacturing method to reduce the discreteness of the electrical parameters of the resistive variable memory through the formation process, which improves the performance and reliability of the device

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