2results about How to "Prevent metal diffusion" patented technology

The application discloses a preparation method of a silicon carbide-based monolithic integrated ultraviolet photoelectric sensing chip and relates to the field of wide-bandgap semiconductor ultraviolet photoelectric sensing chip manufacturing technologies. The application provides a wafer comprising an n-type 4H-SiC substrate and an n-type 4H-SiC epitaxial layer, a composite hard mask composed of an oxygen-containing SiO X layer and a Ni layer is formed on the front surface of the wafer, a main window penetrating the Ni layer and the oxygen-containing SiO X layer is formed through a first photoetching pattern, an oxygen-containing reaction shoulder window penetrating the Ni layer and remaining the oxygen-containing SiO X layer is formed at the edge of the main window through a second photoetching pattern, and SF6 / O2 / Ar pulse bias etching is performed after the second photoresist is removed, so that an isolated mesa surrounding the active pixel area and the dark reference pixel area is formed. The oxygen-containing SiO X layer remaining below the oxygen-containing reaction shoulder window is activated and locally consumed under the action of plasma bombardment and fluorine-based active particles, so that an oxygen-containing reaction interface is formed near the edge of the mesa, thereby adjusting the carbon residue removal near the bottom corner of the mesa and the reaction balance of the sidewall.