55results about How to "Avoid Metal Contamination" patented technology

A heating apparatus for a semiconductor producing system is provided, including a heater having a mounting face, an opposed back face, a first resistance heating element, a second resistance heating element provided along substantially the same plane as the first heating element, a first terminal connected with the first heating element and a second terminal connected with the second heating element. A supporting member is fixed to the back face of the heater. First and second power supply means are respectively connected with the first and second terminals and contained in an inner space of the supporting member. A conductive connector connects the first heating element and the first terminal but not the second heating element. The first heating element is provided in a first zone, the second heating element is provided in a second zone, and the conductive connector is provided in the plane and the second zone.

A substrate processing apparatus for supplying a treatment liquid onto the surface of a substrate to treat the same. This apparatus is provided with: a spin chuck for holding and rotating a substrate; a nozzle for supplying a treatment liquid to the substrate held by the spin chuck; a circulating passage arranged such that the treatment liquid supplied to the substrate from the nozzle and used for substrate treatment is circulated to the nozzle and reutilized for substrate treatment; a metal contamination amount measuring device for measuring the metal contamination amount in the treatment liquid passing through the circulating passage; and a judgment processing unit for judging whether or not the value measured by the metal contamination amount measuring device has exceeded a predetermined set value.

A substrate table includes a substrate table main body provided with a heater embedded therein and having an upper surface serving as a heating face for heating a target substrate, and lifter pins inserted in the substrate table main body and configured to be moved up and down. Recessed portions are formed in the heating face of the substrate table main body at positions corresponding to the lifter pins and have a bottom lower than the heating face. Each of the lifter pins includes a lifter pin main body and a head portion formed at a distal end of the lifter pin main body and having a diameter larger than the lifter pin main body, the head portion being formed to correspond to each recessed portion and to be partly accommodated in the recessed portion. The head portion has a head portion upper end for supporting the target substrate and a head portion lower surface opposite to the head portion upper end. The lifter pins are movable between a first state where the head portion lower surface engages with the bottom of the recessed portion, and a second state where the head portion lower surface separates upward from the bottom of the recessed portion.

An electronic device comprises a substrate and at least a warped spring connector. The substrate has a signal bonding pad and a ground plane. The warped spring connector is disposed on the substrate and is connected to the bonding pad. The warped spring connector includes at least a ground lead electrically connected to the ground plane, a dielectric layer on the ground lead, and a transmitting lead on the dielectric layer. The transmitting lead is bonded to the bonding pad. The ground lead is isolated from and close to the transmitting lead to solve cross-talk and noise problem. Furthermore, the coefficient of thermal expansion of the transmitting lead is different from that of the dielectric layer or the ground lead such that the warped spring connector has a suspending end suspending away from the substrate.

A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.

A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus 1 includes a metal processing chamber 4 configured to accommodate therein a substrate G to be plasma-processed; an electromagnetic wave source 34 that supplies an electromagnetic wave necessary to excite plasma in the processing chamber 4; one or more dielectric members 25 provided on a bottom surface of a cover 3 of the processing chamber 4 and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source 34 into the inside of the processing chamber 4, a portion of each dielectric member 25 being exposed to the inside of the processing chamber 4; and a surface wave propagating section 51 installed adjacent to the dielectric member 25 and configured to propagate the electromagnetic wave along a metal surface exposed to the inside of the processing chamber 4.

The present invention relates to a polishing composition for silicon wafer comprising silica, a basic compound, a polyaminopolycarboxylic acid compound having hydroxy group, and water. The polishing composition can prevent metal contamination by nickel, chromium, iron, copper or the like, particularly copper contamination in polishing of silicon wafer.

An integrated circuit device includes a substrate having a first region and a second region separated from each other along a direction parallel to an upper surface of the substrate. An interface device isolation layer fills an interface trench in an interface region between the first region and the second region and defines a portion of a first active area positioned in the first region and a portion of a second active area positioned in the second region. An insulation pattern extends from the first region to an upper portion of the interface device isolation layer. The insulation pattern covers the first active area and at least a portion of the interface device isolation layer. The insulation pattern defines an undercut area on an upper surface of the interface device isolation layer. A buried pattern substantially fills the undercut region.

An etchant and an etching method that contribute to prevention of metal contamination of a semiconductor silicon wafer, and a semiconductor silicon wafer in which metal contamination is extremely reduced, are provided. The etchant according to the present invention is prepared by immersing stainless steel in an alkali aqueous solution for not less than 10 hours. In the etching method according to the present invention, a semiconductor silicon wafer is etched by using the etchant. Thereby, the semiconductor silicon wafer according to the present invention, in which metal contamination is extremely reduced, is obtained.

An alkaline solid adsorbent for deacidifying and refining the liquid esters of organic acid is prepared from the oxide and hydroxide of alkali-earth in IIA family and alumina through wetting, mixing, kneading, extruding to become strips, drying and high-temp calcining. It has high specific surface area, adsorptive volume and mechanical strength.

A lubricant is provided which has a hardness in the range 0.1-10 N/mm at all temperatures in the range 15-40° C. The lubricant consists of at least one full ester of a glycol with a fatty acid, e.g. ethylene glycol dilaurate, optionally mixed with a minor amount of a fatty acid such as stearic acid, and/or a minor amount of a partial ester of a glycol with a fatty acid. The lubricant is useful in the production of press-formed components, and particularly in techniques for converting aluminium sheet to adhesively bonded aluminium structures.

A surface cleaning method of a semiconductor wafer heat treatment boat that can prevent metallic contamination to semiconductor wafers and keep down a production time and manufacturing costs of semiconductor wafers by efficiently and easily removing metallic impurities in an oxide film on an SiC boat surface is provided. A surface cleaning method of a semiconductor wafer heat treatment boat according to an embodiment of the present invention is a surface cleaning method of a semiconductor wafer heat treatment boat whose surface is formed of SiC, includes oxidizing the surface of the heat treatment boat by thermal oxidation and etching a portion of the oxide film formed after oxidation is removed.

The invention relates to the technical field of high polymer materials, in particular to ABS noctilucent masterbatches and a preparation method thereof. The ABS noctilucent masterbatches comprise the following components in percentage by mass: 50 to 75 percent of ABS, 5 to 10 percent of dispersant, and 20 to 40 percent of noctilucent powder, wherein the dispersant is dimethyl silicon oil and/or polyethylene wax. The ABS noctilucent masterbatches and the preparation method thereof have the benefits that the abrasion of a machine caused by noctilucent powder during a production process is reduced and the blackening phenomenon of noctilucent powder is avoided by the improvements, such as extruding through a single screw, reducing extruding rate, raising processing temperature, mixing materials in a plastic material barrel at a low speed, of process conditions; the processing temperature is risen, the coating capacity of melt to the noctilucent powder is improved, and the ABS noctilucent masterbatches with higher concentration are prepared by mixing ABS powdery matrix resin and ABS particular matrix resin; the interference to the luminance caused by the color of the matrix resin is reduced by using a suitable amount of dispersant; the ABS noctilucent masterbatches prepared by the preparation method has the advantages of high concentration, long-acting luminescence, large molecular weight of ABS, low abrasion to the machine, uniform dispersion, no chromatic aberration, wide application range and the like.

The invention discloses a method for dyeing a fabric with plant dye. In the method, dye mother liquor extracted from natural plants is used as dye liquor, a pretreated fabric is soaked in the dye liquor, a dyeing additive is added into the dye liquor, no dye mordant is added, ultrasonic dyeing is conducted according to the bath ratio of 1:3-10 and at the temperature of 30-50 DEG C, and finally dyed fabric meeting the demand for firmness is obtained. According to the obtained method for dyeing the fabric with the plant dye, the common dyeing additive is used for preparing the natural plant dyeliquor without usage of toxic dye mordant, ultrasonic dyeing with the low bath ratio is conducted, and finally the dyed fabric which meet the demand for dyeing firmness and is environmentally friendlyis obtained; in the method, during dyeing, the dyeing bath ratio can be decreased greatly, water used for production is further saved, more importantly, the amount of wastewater is reduced, there isno metal pollution in the wastewater, there are no cancerogenic substances, and the meaning of environmental protection is remarkable.

The present invention proposes a method for manufacturing a capacitor, comprising: providing a semiconductor substrate in which several trenches are formed; forming a lining oxide layer on the sidewall and bottom of the trench; forming a covering part on the sidewall of the trench The nitride layer lining the oxide layer; using the nitride layer as a mask, etching the lining oxide layer and semiconductor substrate exposed in the trench to form an area with increased area; the sidewall and bottom of the area with increased area in the trench The first electrode is formed; after removing the nitride layer, a dielectric layer and a second electrode are sequentially formed on the first electrode and the sidewall of the trench. The invention avoids metal pollution to the electrode, effectively protects the electrode, and improves the quality of the electrode and the subsequently formed capacitor.

A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. Accordingly, the above processes may prevent the poly silicon layer from metal contamination.