How to make a capacitor

A manufacturing method and capacitor technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of reducing yield, affecting device quality, metal pollution, etc., to improve quality, avoid metal pollution, and protect electrodes. Effect

Inactive Publication Date: 2011-12-07
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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Problems solved by technology

[0004] At present, when increasing the usable area of ​​the capacitor, a metal oxide layer made of aluminum oxide is used

Method used

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  • How to make a capacitor
  • How to make a capacitor
  • How to make a capacitor

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Example Embodiment

[0016] In the prior art by using aluminum oxide as a mask to increase the area of ​​the lower part of the deep groove, thereby increasing the usable area of ​​the capacitor, the inventor found that when the first electrode of the capacitor is formed on the sidewall and bottom of the expanded area of ​​the groove, The aluminum oxide will still remain on the upper part of the trench sidewall as a mask. Since the first electrode is also a conductive material, the metal components in the aluminum oxide will cause metal contamination to the first electrode, affecting the quality and conductivity of the first electrode .

[0017] In response to the above technical problems, the inventor found through experimental research that if a nitride layer is used instead of aluminum oxide as a mask for increasing the area of ​​the trench, the nitride layer does not contain metal components, thus avoiding the generation of counter electrodes during subsequent electrode formation. Metal contaminat...

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Abstract

The present invention proposes a method for manufacturing a capacitor, comprising: providing a semiconductor substrate in which several trenches are formed; forming a lining oxide layer on the sidewall and bottom of the trench; forming a covering part on the sidewall of the trench The nitride layer lining the oxide layer; using the nitride layer as a mask, etching the lining oxide layer and semiconductor substrate exposed in the trench to form an area with increased area; the sidewall and bottom of the area with increased area in the trench The first electrode is formed; after removing the nitride layer, a dielectric layer and a second electrode are sequentially formed on the first electrode and the sidewall of the trench. The invention avoids metal pollution to the electrode, effectively protects the electrode, and improves the quality of the electrode and the subsequently formed capacitor.

Description

technical field [0001] The invention relates to a method for manufacturing a capacitor. Background technique [0002] Dynamic random access memory (DRAM) is an important memory storage element. Due to its multiple functions and low manufacturing cost, DRAM is widely used in the fields of computers, communications, and home appliances. With the development of electronic technology and the higher requirements for the storage capacity and functions of DRAM, it is an inevitable way to improve the integration of DRAM. As the integration density of the DRAM increases, the available area for capacitors used in the DRAM also decreases, reducing the capacitance of the DRAM. In order to solve the above-mentioned problems, a high-k (permittivity) dielectric layer is currently used as the isolation of electrodes between capacitors, or a method of increasing the use area of ​​the capacitor is used to increase the capacitance of the DRAM. [0003] In order to increase the use area of ​​...

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Application Information

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IPC IPC(8): H01L21/02H01L21/8242
Inventor 涂火金沈忆华史运泽
Owner SEMICON MFG INT (SHANGHAI) CORP
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