77 results about "Metallic contamination" patented technology

A method to detect metal contamination on a semiconductor topography is provided. The semiconductor topography may include a semiconductor substrate or a dielectric material disposed upon a semiconductor substrate. The metal contamination may be driven into the semiconductor substrate by an annealing process. Alternatively, the annealing process may drive the metal contamination into the dielectric material. Subsequent to the annealing process, a charge may be deposited upon an upper surface of the semiconductor topography. An electrical property of the semiconductor topography may be measured. A characteristic of at least one type of metal contamination may be determined as a function of the electrical property of the semiconductor topography. The method may be used to determine a characteristic of one or more types of metal contamination on a portion of the semiconductor topography or the entire semiconductor topography. A system configured to detect metal contamination on a semiconductor topography is also provided. An oven may be incorporated into the system and may be used to anneal the semiconductor topography. The system may also include a device that may be configured to deposit a charge on an upper surface of the semiconductor topography. A sensor may also be included in the system. The sensor may use a non-contact work function technique to measure an electrical property of the semiconductor topography.

The invention relates to composite electrodes and an electrokinetic remediation method of heavy metal polluted soil by using the composite electrodes. According to the electrodes, an active material layer is adhered to the surface of graphite electrodes or metal electrodes of an anode and a cathode so as to form integrated composite electrodes with permeable reactive performance. By the permeablereactive layer, on one hand, H<+> and OH<-> generated from the electrode reaction can be neutralized and adsorbed, the pH value of the soil can be effectively controlled, and the heavy metal can be prevented from being prematurely deposited in the soil. On the other hand, migrated heavy metal pollutants can be captured, and in situ removal of the heavy metal pollutants in the soil can be realizedby removing the composite electrodes.

Provided is a cleaning agent for electronic materials, which enables very efficient advanced cleaning such that yield in the production of the electronic materials is improved and cleaning in a short period of time becomes possible, the cleaning agent having excellent cleaning power for fine-grained particles and organic matter and being able to reduce metallic contamination on the substrate. The cleaning agent for electronic materials comprises sulfamic acid (A), an anionic surfactant having at least one sulfonic acid group or a salt thereof in the molecule (B), a chelating agent (C), and water, wherein the pH at 25 C is preferably not more than 3.0 and the (B) is preferably a polymeric anionic surfactant (B1) having a weight average molecular weight of 1,000 to 2,000,000.

The invention provides a system for separating and purifying trichlorosilane in production process of polysilicon and an operation method thereof. The system consists of a rectification working section and a recovery refining working section; wherein, the rectification working section comprises six towers, and the recovery refining working section includes three towers; the connection mode of the six towers of the rectification working section is that a lightness-removing tower I, a lightness-removing tower II, a weight-removing tower, a secondary lightness-removing tower, a secondary weight-removing tower I and a secondary weight-removing tower II are sequentially connected with each other; the connection mode of the three towers of the recovery refining working section is that a lower-removing tower, a higher-removing tower and a product refining tower are sequentially connected with each other. Chlorsilane rectification technical equipment can be one of main technical bottlenecks limiting the production of the high-quality polysilicon material in China. The invention can achieve the separation requirements and energy-saving aim under the condition that the mass flow rate elastic ratio between feeding of the rectification working section and feeding of the recovery working section is 1:1-1:5. The rectification technique is simplified and optimized, the separation efficiency is improved, the energy consumption of rectification products is reduced, the reliability and stability of system operation can be enhanced, and the content of phosphorus, arsenic, boron and metallic contamination in the rectification products can be lowered.

In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against metallic contamination that generated after backside grinding in assembly processes.

The invention discloses a method for preparing a metallic contamination adamantine surface ionic liquid lubricant self-assembly lubricative film. The method takes ionic liquid lubricant as raw material, adopts magnetron sputtering equipment to prepare a metallic contamination adamantine carbon film and assembles the liquid lubricant film which is stable, uniform and ordered on the carbon film. The method is characterized in that the preparation process is operated at normal temperature, and the requirements for the material and the shape of a substrate are lower; the film is stable and uniform, and has lower surface roughness; the film also has good performances on antifriction, wear resistance and adhesion resistance. The test of friction and wear proves that the ionic liquid lubricant and adamantine has good combining performance and better performances on antifriction, wear resistance and adhesion resistance, so that the lubricative film is expected to become the effective means of solving the problems of protecting and lubricating materials I the technical fields such as space machinery, information technology, etc.

The present invention relates to a polishing composition for silicon wafer comprising silica, a basic compound, a polyaminopolycarboxylic acid compound having hydroxy group, and water. The polishing composition can prevent metal contamination by nickel, chromium, iron, copper or the like, particularly copper contamination in polishing of silicon wafer.

The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants.

A surface cleaning method of a semiconductor wafer heat treatment boat that can prevent metallic contamination to semiconductor wafers and keep down a production time and manufacturing costs of semiconductor wafers by efficiently and easily removing metallic impurities in an oxide film on an SiC boat surface is provided. A surface cleaning method of a semiconductor wafer heat treatment boat according to an embodiment of the present invention is a surface cleaning method of a semiconductor wafer heat treatment boat whose surface is formed of SiC, includes oxidizing the surface of the heat treatment boat by thermal oxidation and etching a portion of the oxide film formed after oxidation is removed.

A heat treating apparatus, wherein a treated body (W) is placed on the upper surface of a loading table (32) which is erected from the bottom part of a treatment container (4) through a column and in which a heating means (38) is buried and a specified heat treatment is applied to the treated body. Insulating cover members (72), (74), and (76) are installed on the upper surface, side surface, and lower surface of the loading table. Thus, since metallic atoms causing contamination can be prevented from being thermo-diffused from the loading table, various contaminations such as metallic contamination and organic substance contamination can be prevented from occurring.

To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.7, A=(D90−D50)/(D50−D10) and the polishing composition is used for final polishing in silicon wafer polishing.

The invention discloses a method for the in-situ remediation of heavy metal hexavalent chromium-contaminated soil. According to the method, by using the advantages of a microbial fuel cell (MFC), an anode assembly and a cathode assembly (a diaphragm is arranged between the anode assembly and the cathode assembly) is embedded in the contaminated soil, the anode assembly locally utilizes organic matters in the soil as fuel, generated electronics reach the cathode assembly by virtue of anodes and leads, heavy metal hexavalent chromium adsorbed on the cathode assembly is reduced, and thus the degradation and the transformation of heavy metal hexavalent chromium contaminants in the soil are promoted, and the in-situ remediation of the heavy metal hexavalent chromium-contaminated soil is realized. By adopting an in-situ remediation process, the method has the advantages of high removal efficiency, low cost, good safety, no need of ventilation and energy consumption, capability of recycling and no secondary pollution because the anode assembly and the cathode assembly can be combined and optimized according to the actual conditions, has the great importance in remediating the heavy metal hexavalent chromium-contaminated soil, has a wide application prospect in fields of resources and environments such as the remediation of the heavy metal hexavalent chromium-contaminated soil, and the like.

A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. Accordingly, the above processes may prevent the poly silicon layer from metal contamination.

Provided is an epitaxial silicon wafer with reduced metal contamination achieved by higher gettering capability and a method of efficiently producing the same.

The method of producing an epitaxial wafer includes a wafer production step of pulling a single crystal silicon ingot having a COP formation region by Czochralski process, and subjecting the obtained single crystal silicon ingot to slicing, thereby producing a silicon wafer 10 including COPs; a cluster ion irradiation step of irradiating the produced silicon wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16, contained as a solid solution in a surface portion 10A of the silicon wafer 10; and an epitaxial layer formation step of forming an epitaxial layer 20 on the modifying layer 18 of the silicon wafer 10.