6 results about "Metallic contamination" patented technology

This invention discloses a chemical mechanical polishing slurry for silicon wafers based on the synergistic effect of ternary polymers, comprising the following components by weight percentage: silica sol 5-15 wt%; polyethylene glycol 0-10 wt%; cellulose derivative 0-0.5 wt%; sorbitol 0-0.5 wt%; oxidant 0.5-1.5 wt%; pH adjuster 0.3-0.8 wt%; and deionized water as the balance. Through the precise proportioning and synergistic effect of the ternary system, this polishing slurry achieves multi-coupling optimization, including abrasive stabilization, shear thickening, and chemical complexation. While ensuring high material removal rates, it significantly reduces surface defects and metal contamination, meeting the surface polishing requirements of advanced silicon wafer processes. Furthermore, the formulation of this polishing slurry is environmentally friendly, consisting of water-soluble polymers or biodegradable materials, greatly reducing environmental burden and simplifying post-processing steps, making it easy for industrialization and promotion.

Provided is a method for heat treating a silicon wafer using a horizontal heat treatment furnace, which can suppress metal contamination of a silicon wafer disposed in the vicinity of a heat retaining block provided for temperature uniformization of a wafer setting area. The method for heat treating a silicon wafer using a horizontal heat treatment furnace (100) of the present invention is configured to dispose a wafer boat (16) in a cylindrical furnace core tube (12), wherein (A) a wafer group (WF) is disposed on the wafer boat (16), (B) heat retaining blocks (a first heat retaining block (18A) and a second heat retaining block (18B)) are disposed on both sides of the wafer group (WF) in a direction of a central axis (X) of the furnace core tube on the wafer boat (16) so as to be apart from the wafer group (WF), and (C) pseudo wafers (20A, 20B, 20C, 20D) of high cleanliness are disposed on both sides of the first heat retaining block (18A) and the second heat retaining block (18B) in the direction of the central axis (X) of the furnace core tube on the wafer boat (16).

The application discloses a wafer surface activation bonding device and a bonding method, and relates to the technical field of wafer processing. The device comprises a clamp, a movable support rod and a bombardment particle emission device. The clamp comprises oppositely arranged first and second sample holders, and the first and second sample holders are each provided with a hard nonmetal back plate. Two wafers to be bonded are fixed on the hard nonmetal back plate, and the surface area of the two wafers to be bonded that is in contact with each other is a bonding area, which is surrounded by the surface of the hard nonmetal back plate. The movable support rod is arranged at least on the outer side of any one of the first and second sample holders, so that relative extrusion between the first and second sample holders is realized, and the bonding area of the surfaces of the two wafers to be bonded is fully contacted under the action of pressure. The bombardment particle beam spot emitted by the bombardment particle emission device uniformly covers the bonding area of the two wafers to be bonded. The application can effectively avoid the introduction of metal contamination at the bonding interface, and has the advantages of simple process, good compatibility and the like.

The application discloses a method for improving CIS white pixels, comprising the following steps: providing a substrate, forming a gate structure of a CIS device on the substrate, performing ion implantation on source and drain regions, and forming the source and drain regions in the substrate on both sides of the gate structure; forming a metal silicide blocking oxide layer on the exposed surface of the substrate and the gate structure; performing rapid thermal annealing treatment, and activating the doped ions of the source and drain regions; performing furnace tube medium-temperature annealing treatment; and forming a metal silicide blocking nitride layer on the exposed surface of the substrate and the gate structure. The application can improve the passivation ability of the metal silicide blocking layer to metal impurities, is beneficial to reducing metal pollution caused by subsequent contact hole forming processes and metal line forming processes, thereby reducing the number of white pixels and improving the white pixel problem.

This application provides an ion implanter, belonging to the semiconductor field, comprising an ion source for generating cations and electrons; an ion extraction module for extracting cations from the ion source and generating an ion beam; a first electron extraction module for extracting electrons from the ion source and generating an electron beam; a neutralization chamber for receiving the ion beam and electron beam and neutralizing the ion beam using the electron beam; and an implantation chamber connected to the neutralization chamber, where the ion beam is used for ion implantation. This application utilizes the first electron extraction module to extract electrons from the ion source, which on the one hand promotes the departure of cations from the ion source, facilitating the extraction of cations by the ion extraction module; on the other hand, it utilizes the electron beam formed by the extracted electrons to neutralize the ion beam, thereby eliminating the need for an electron gun, reducing costs, and preventing metal contamination, thus solving the problems of white spots and dark current in the product.

A method of handling a test pad and a method of fabricating a semiconductor device are disclosed. The method of handling a test pad includes: providing a substrate formed thereon with a first insulating dielectric layer and a first test pad in the first insulating dielectric layer, wherein a surface of the first test pad is at least partially exposed from the first insulating dielectric layer, and there is a probe mark with a protrusion resulting from testing with probe tips on the surface portion of the first test pad exposed from the first insulating dielectric layer; and heating and melting the protrusion by laser annealing, thereby reducing a height of the protrusion. This invention can ensure good flatness of a surface to be bonded while enabling reduced process complexity and preventing metal contamination of the surface to be bonded.